Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices

Stefan Wolf,Heiner Zwickel,Clemens Kieninger,Matthias Lauermann,Wladislaw Hartmann,Yasar Kutuvantavida,Wolfgang Freude,Sebastian Randel,Christian Koos
DOI: https://doi.org/10.1364/OE.26.000220
2017-09-19
Abstract:We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a {\pi}-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 Vpp, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit.
Applied Physics
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