Silicon Photonics for 100Gbaud.

Jianying Zhou,Jian Wang,Qun Zhang

DOI: https://doi.org/10.1109/jlt.2020.3009952

IF: 4.7

2020-01-01

Journal of Lightwave Technology

Abstract:We reviewed recent breakthroughs on silicon photonic for 100Gbaud operation. We experimentally demonstrated 120Gbaud QPSK and 100Gbaud 32QAM operations using a high performance all-silicon IQ modulator with extinction ratio of >25dB and 6dB-bandwidth of 50GHz.

What problem does this paper attempt to address?

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Oskars Ozolins,Armands Ostrovskis,Michael Koenigsmann,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Ryan P. Scott,Hansjoerg Haisch,Hadrien Louchet,Aleksandrs Marinins,Sandis Spolitis,Jurgis Porins,Lu Zhang,Richard Schatz,Xianbin Yu,Vjaceslavs Bobrovs,Markus Gruen,Xiaodan Pang

DOI: https://doi.org/10.1109/icton59386.2023.10207236

2023-01-01

Abstract:Silicon photonics (SiP) is a key enabling technology for high-baudrate communication. It is a key technology for future 800 Gbps and 1.6 Tbps solutions to meet the ever-increasing demands. The 800G pluggable multi-source agreement (MSA) suggests that intensity-modulated direct-detection (IM/DD) is the most sustainable way forward [1]. The high operational bandwidth of each transceiver component is essential. An ultra-compact SiP slow light modulator with record-high bandwidth of 110 GHz shows the potential [2]. Therefore, both multilevel pulse amplitude modulation (PAM) and on-off keying (OOK) should be considered. SiP offers excellent production yield and has a substantial role in optical interconnects. SiP ring resonator modulators (RRM) have unique advantages like a small footprint, simple driver configuration, low power consumption, and suitability for multichannel applications. On the other hand, the SiP Mach-Zehnder modulator (MZM) offers differential drive benefits.
100-Gbps Hybrid Optical Fiber-Wireless Transmission

Xiaodan Pang,Caballero, A.,Lei Deng,Xianbin Yu

DOI: https://doi.org/10.1364/oecc_ps.2013.thp3_1

2013-01-01

Abstract:We present experimental results on using optical transmission technologies such as I&Q modulators, digital coherent receivers, heterodyne up-conversion in fast photodiodes, to generate, transmit and detect high capacity wireless transmission. Both OFDM and QAM modulation formats are tested in the W-achieving capacities up to 100-Gbps with seamless optical fiber-wireless conversion.
240/160 Gbaud OOK Silicon Photonics MZM/RRM Transmitters for Short-Reach Applications

Armands Ostrovskis,Michael Koenigsmann,Toms Salgals,Benjamin Krueger,Fabio Pittala,Ryan P. Scott,Hansjoerg Haisch,Hadrien Louchet,Aleksandrs Marinins,Sandis Spolitis,Jurgis Porins,Lu Zhang,Richard Schatz,Xianbin Yu,Vjaceslavs Bobrovs,Markus Gruen,Xiaodan Pang,Oskars Ozolins

DOI: https://doi.org/10.1109/SiPhotonics55903.2023.10141935

2023-01-01

Abstract:We demonstrate a record 240 Gbaud on-off keying, 150 Gbaud 4-level pulse amplitude modulation, and 100 Gbaud 6-level pulse amplitude modulation SiP MZM-based transmitter with performance below the 6.25% overhead HD-FEC threshold. We also show a 160 Gbaud on-off keying SiP RRM-based transmitter.
Single-lane 200 Gbit/s Photonic Wireless Transmission of Multicarrier 64-QAM Signals at 300 GHz over 30 M

Hongqi Zhang,Lu Zhang,Zuomin Yang,Hang Yang,Zhidong Lu,Xiaodan Pang,Oskars Ozolins,Xianbin Yu

DOI: https://doi.org/10.3788/col202321.023901

IF: 2.56

2023-01-01

Chinese Optics Letters

Abstract:Recently,wireless communication capacity has been witnessing unprecedented growth.Benefits from the optoelectronic components with large bandwidth,photonics-assisted terahertz[THz]communication links have been extensively devel-oped to accommodate the upcoming wireless transmission with a high data rate.However,limited by the available signal-to-noise ratio and THz component bandwidth,single-lane transmission of beyond 100 Gbit/s data rate using a single pair of THz transceivers is still very challenging.In this study,a multicarrier THz photonic wireless communication link in the 300 GHz band is proposed and experimentally demonstrated.Enabled by subcarrier multiplexing,spectrally efficient modu-lation format,well-tailored digital signal processing routine,and broadband THz transceivers,a line rate of 72 Gbit/s over a wireless distance of 30 m is successfully demonstrated,resulting in a total net transmission capacity of up to 202.5 Gbit/s.The single-lane transmission of beyond 200 Gbit/s overall data rate with a single pair of transceivers at 300 GHz is con-sidered a significant step toward a viable photonics-assisted solution for the next-generation information and communi-cation technology[ICT]infrastructure.
PS-64QAM-OFDM THz Photonic-Wireless Transmission with 2×300 Gbit/s Line Rate

Shi Jia,Lu Zhang,Shiwei Wang,Wei Li,Mengyao Qiao,Zijie Lu,Nazar Ideer,Xiaodan Pang,Hao Hu,Leif K. Oxenlowe,Xianbin Yu

DOI: https://doi.org/10.1364/cleo_si.2020.stu4l.5

2020-01-01

Abstract:THz photonic-wireless transmission of a record 612.65 Gbit/s line rate is successfully demonstrated in the 320-380-GHz band by employing THz orthogonal polarization dual-antenna, PS-64QAM-OFDM modulation and advanced nonlinear-digital reception techniques.
Silicon Photonics for Advanced Optical Communication Systems

Zhiping Zhou,Xingjun Wang,Huaxiang Yi,Zhijuan Tu,Wei Tan,Qifeng Long,Mei Yin,Yawen Huang

DOI: https://doi.org/10.1117/12.2009453

IF: 1.3

2013-01-01

Optical Engineering

Abstract:In this paper, we demonstrated recent progress on Si based optical components for advanced optical communication systems. The polarization beam splitter with extinction ratio of more than 20dB and the optical 90° hybrid having phase deviation within ±5° were obtained using MMI structures. The 12Gb/s modulators and the 20GHz photodetectors were measured. Benefiting from the unique properties of silicon modulator, an error-free 80Km transmission of the signals generated by our silicon carrier-depletion Mach-Zehnder modulator was also demonstrated at 10Gb/s and the power penalty was as low as 1.15dB. These results show that silicon photonics has a great potential in advanced optical communication systems.
Silicon Photonics Carrier Depletion Modulators Capable of 85gbaud 16QAM and 64gbaud 64QAM.

Jianying Zhou,Jian Wang,Likai Zhu,Qun Zhang,Jin Hong

DOI: https://doi.org/10.1364/ofc.2019.tu2h.2

2019-01-01

Abstract:We achieved high performance silicon photonics carrier-depletion Mach-Zehnder modulation with a commercial foundry by optimizing doping and device design. We demonstrated IQ modulator operating at 85Gbaud 16QAM and 64Gbaud 64 QAM with >25dB extinction ratio.
High Baud Rate All-Silicon Photonics Carrier Depletion Modulators

Jianying Zhou,Jian Wang,Likai Zhu,Qun Zhang

DOI: https://doi.org/10.1109/JLT.2019.2933384

IF: 4.7

2020-01-01

Journal of Lightwave Technology

Abstract:We achieved high performance high speed silicon photonics carrier-depletion Mach-Zehnder modulation with commercial foundry by co-optimization of doping and device design assisted with an accurate electro-optical (EO) model. We demonstrated high performance IQ modulators operating at 85 Gbaud 16 QAM and 64 Gbaud 64 QAM with extinction ratio of over 25 dB. For the design of the high performance all-silicon carrier depletion modulator, we developed modeling and design tools to provide not only accuracy, but also efficiency in the simulation of distributed optical and electronic characteristics of travelling waveguides with different designs of optical and microwave waveguides under various doping conditions, which allow the co-design of velocity phase match between optical and microwave waveguides and the impedance match between microwave travelling waveguide and terminal impedance. Our experimental characterization test data agreed well with the model simulation data. More recently, with practical Nyquist filter and linear compensation in commercial arbitrary wave generator (AWG) and optical modulation analyzer (OMA), we demonstrated 100 Gbaud 32 QAM with an all-silicon IQ modulator, which has 6 dB electro-optical bandwidth of 50 GHz and BER achieving FEC threshold with a modern FEC, showing the potential for Tb/s applications.
High Baud Rate Transmission with Silicon Photonic Modulators

Fan Zhang,Lei Zhang,Xiaoke Ruan,Fan Yang,Hao Ming,Yanping Li

DOI: https://doi.org/10.1109/jstqe.2021.3055582

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:We review high baud rate operation of silicon photonic modulators with emphasis on short-reach and metro-haul applications. The current status of both devices and digital signal processing are discussed. The basic design of a typical carrier-depletion-based dual-drive traveling-wave Mach-Zehnder modulator (TW-MZM) is studied by simulation. Based on an all-silicon TW-MZM, we report the transmission experiments of high baud rate single sideband 4-ary pulse amplitude modulation (PAM-4) signals with linear equalization and artificial neural network based equalization, respectively. Our work indicates all-silicon modulators can address the requirements of future optical communication systems operating at 100 Gbaud.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
30 Gbps high optical bandwidth silicon modulator

Hao Xu,Xianyao Li,Xi Xiao,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1109/Group4.2013.6644431

2013-01-01

Abstract:We report a high speed silicon modulator with a 3 dB optical bandwidth of 39 nm. 30 Gbps electro-optical modulations were experimentally demonstrated with a low driving voltage of 3 V.
Silicon Photonics IQ Modulator Targeted for 800ZR Data Center Interconnection

Jian Wang,Wen-Jr Jiang,You-Wei Chen,Mustafa Al-Qadi,Kangmei Li,Konstantin Kuzmin,Jason Ackert,David Dougherty,Weilin Liu,Chengkun Chen,Hiroaki Yamada,Calvin Ho,Ping Wang,Yan Yang Zhao,Yifeng Zhou,Xu Liu,Kevin Schmidt,Jocelyn Nee,Kenneth McGreer,Marcel Boudreau,Jibin Sun,Winston I. Way,Hui Xu

2022-01-01

Abstract:An all-silicon polarization-multiplexed modulator is demonstrated for the first time at 120GBaud-16QAM over 100-km SSMF, achieving per-polarization output power of -18.7dBm and rOSNR of 23.5dB at oFEC BER threshold. A BER of 1.4e-3 was obtained with a 63-GHz scope without sophisticated DSP or optical equalization.
All-optical Wavelength Conversion and Five-Channel Multicasting for 20 Gbit/s QPSK Signals in a Silicon Waveguide.

Xiaoyan Wang,Lingchen Huang,Ke Yi,Xianglian Feng,Shiming Gao

DOI: https://doi.org/10.1364/ol.39.006122

2014-01-01

Abstract:Wavelength conversion and five-channel multicasting for 20 Gbit/s quadrature phase-shift keying signals have been experimentally demonstrated based on four-wave mixing in a silicon waveguide with digital coherent detection. The eye diagrams and constellation diagrams of the converted and multicasting idlers are successfully observed. Moreover, the bit-error rates (BERs) of the generated idlers are measured and the power penalties are all less than 0.7 dB at a BER of 3×10(-3).
A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

Chi Xiong,Douglas M. Gill,Jonathan E. Proesel,Jason S. Orcutt,Wilfried Haensch,William M. J. Green

DOI: https://doi.org/10.1364/OPTICA.3.001060

2016-08-27

Abstract:Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more-efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increasing the number of parallel fibers, increasing the number of wavelengths per fiber, and using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a unique advantage because it does not require extra lasers or a costly overhaul of optical fiber cablings within the existing infrastructure. Here, we demonstrate the first fully monolithically integrated silicon photonic four-level PAM (PAM-4) transmitter operating at 56 Gb/s and demonstrate error-free transmission (bit-error-rate < 10$^{-12}$) up to 50 Gb/s without forward error correction. The superior PAM-4 waveform is enabled by optimization of silicon traveling wave modulators and monolithic integration of the CMOS driver circuits. Our results show that monolithic silicon photonics technology is a promising platform for future ultrahigh data rate optical interconnects.

Optics
Up to 170Gbaud Optical Interconnects with Integrated CMOS-Silicon Photonics Transmitter

Xiansong Fang,Ke Li,David J. Thomson,Fan Yang,Shenghao Liu,Weiwei Zhang,Wei Cao,Callum G. Littlejohns,XingZhao Yan,Martin Ebert,Mehdi Banakar,Dehn Tran,Fanfan Meng,Han Du,Graham T. Reed,Fan Zhang

DOI: https://doi.org/10.1109/ACP55869.2022.10088674

2022-01-01

Abstract:We investigate the performance boundary of integrated CMOS silicon photonics transmitters with DSP techniques. 170Gbaud OOK generation and 120Gbaud 20km transmission is achieved with a CMOS-silicon transmitter, where the driver amplifier only consumes 158mW.
Silicon Photonic Devices for Scalable Quantum Information Applications

Lantian Feng,Ming Zhang,Jianwei Wang,Xiaoqi Zhou,Xiaogang Qiang,Guangcan Guo,Xifeng Ren

DOI: https://doi.org/10.1364/prj.464808

IF: 7.6

2022-01-01

Photonics Research

Abstract:With high integration density and excellent optical properties,silicon photonics is becoming a promising platform for complete integration and large-scale optical quantum information processing.Scalable quantum information applications need photon generation and detection to be integrated on the same chip,and we have seen that various devices on the silicon photonic chip have been developed for this goal.This paper reviews the relevant research results and state-of-the-art technologies on the silicon photonic chip for scalable quantum ap-plications.Despite the shortcomings,the properties of some components have already met the requirements for further expansion.Furthermore,we point out the challenges ahead and future research directions for on-chip scalable quantum information applications.
Beyond 200G Single Sideband Transmission over 80km with a Silicon IQ Modulator

Lei Zhang,Xiaoke Ruan,Fan Yang,Xinyu Chen,Yanping Li,Fan Zhang

DOI: https://doi.org/10.1364/acpc.2020.m4d.3

2020-01-01

Abstract:We experimentally demonstrate ultra-high speed metro-scale optical transmission of SSB PAM-4 signal with a record single lane bit rate of 204Gb/s over 80km SSMF based on a silicon IQ modulator with two-parallel Mach-Zehnder structure.
Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

赵勇,江晓清,杨建义,王明华

2009-01-01

Abstract:In order to realize the practical application of the Silicon-based optoelectronic devices, the progress and characteristics of Silicon-based CMOS photonic devices using carrier dispersion effect with structures of P-I-N, Bipolar Mode Field Effect Transistor(BMFET), Metal Oxide Semiconductor(MOS) and PN junction are reviewed. And our work in design and fabrication of Silicon-based CMOS photonic devices is reported. The devices fabricated by commercial CMOS process have expected results. The extinction ratios of an optical modulator, a 1 × 2 optical switch and a ring resonator are about 18 dB, 21 dB and 8~12 dB, respectively. The introduction of CMOS technology to the design and fabrication of Silicon-based photonic devices will make integrated optics be on a new level.
Beyond 300gb/s from an Integrated Single-Channel Silicon Photonics Modulator Driver Combination

Ke Li,David J. Thomson,Lingjun Zhou,Weiwei Zhang,Shenghao Liu,Wei Cao,Callum G. Littlejohns,XingZhao Yan,Martin Ebert,Mehdi Banakar,Dehn Tran,Fanfan Meng,Lei Wang,Zhixue He,Fan Zhang,Shaohua Yu,Graham T. Reed

DOI: https://doi.org/10.1109/siphotonics60897.2024.10543408

2024-01-01

Abstract:We investigate the performance boundary of integrated CMOS silicon photonics transmitters by using optical equalisation techniques. Without using any off-line DSP techniques at the receiver side, experimental results demonstrate 182Gbps OOK and 308Gbps PAM-4 transmissions with the energy efficiency including driver, of better than 1pJ/bit.
A Compact 112-Gbaud PAM-4 Silicon Photonics Transceiver for Short-Reach Interconnects

David Weng U. Chan,Gai Zhou,Xiong Wu,Yeyu Tong,Junwei Zhang,Chao Lu,Alan Pak Tao Lau,Hon Ki Tsang

DOI: https://doi.org/10.1109/jlt.2022.3141906

IF: 4.7

2022-04-15

Journal of Lightwave Technology

Abstract:For next generation highly integrated transceivers, silicon photonics (SiP) has attracted widespread interest in using mature CMOS production processes to manufacture high-yield, low-cost photonic integrated circuits (PIC) with the potential for integration with CMOS electronics. SiP now routinely integrate GeSi electroabsorption modulators (EAM) and GeSi waveguide photodiodes which have high responsivity and possess 3-dB electro-optic bandwidth of over 65 GHz. Their ultra-compact dimensions make it possible for multi-channel transceivers to be realized on a small chip area. In this paper, we demonstrate the high-speed capability of these devices incorporated with optimized digital signal processing (DSP) for 100 Gbaud PAM-4 signaling. Using integrated GeSi-EAM and GeSi-photodiode fabricated at a commercial foundry, we carried out intensity modulation and direct detection (IM-DD) transmission experiments in C-band using PAM-4, for both back-to-back and SSMF transmission at 1 km and 1.5 km. Under a 6-dB system bandwidth of 43GHz we attained, with the help of DSP equalization, a record 112 Gbaud (224 Gbs), 108 Gbaud (216 Gbs) and 100 Gbaud (200 Gbs) are achieved over back-to-back, 1 km and 1.5 km SSMF transmission respectively, with a bit-error-rate (BER) below the hard-decision forward-error-correction (HD-FEC) threshold of 3.8E-3.

engineering, electrical & electronic,optics,telecommunications

Silicon Photonics for 100Gbaud.

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

100-Gbps Hybrid Optical Fiber-Wireless Transmission

240/160 Gbaud OOK Silicon Photonics MZM/RRM Transmitters for Short-Reach Applications

Single-lane 200 Gbit/s Photonic Wireless Transmission of Multicarrier 64-QAM Signals at 300 GHz over 30 M

PS-64QAM-OFDM THz Photonic-Wireless Transmission with 2×300 Gbit/s Line Rate

Silicon Photonics for Advanced Optical Communication Systems

Silicon Photonics Carrier Depletion Modulators Capable of 85gbaud 16QAM and 64gbaud 64QAM.

High Baud Rate All-Silicon Photonics Carrier Depletion Modulators

High Baud Rate Transmission with Silicon Photonic Modulators

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

30 Gbps high optical bandwidth silicon modulator

Silicon Photonics IQ Modulator Targeted for 800ZR Data Center Interconnection

All-optical Wavelength Conversion and Five-Channel Multicasting for 20 Gbit/s QPSK Signals in a Silicon Waveguide.

A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

Up to 170Gbaud Optical Interconnects with Integrated CMOS-Silicon Photonics Transmitter

Silicon Photonic Devices for Scalable Quantum Information Applications

Beyond 200G Single Sideband Transmission over 80km with a Silicon IQ Modulator

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

Beyond 300gb/s from an Integrated Single-Channel Silicon Photonics Modulator Driver Combination

A Compact 112-Gbaud PAM-4 Silicon Photonics Transceiver for Short-Reach Interconnects