Abstract:Increasing the power conversion efficiency (PCE) of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has remained challenging over the past decade, in part due to open-circuit voltage (VOC)-limiting defect states at the absorber/buffer interface. Previously, we found that substituting the conventional CdS buffer layer with In2S3 in CZTSSe devices fabricated from nanoparticle inks produced an increase in the apparent doping density of the CZTSSe film and a higher built-in voltage arising from a more favorable energy-band alignment at the absorber/buffer interface. However, any associated gain in VOC was negated by the introduction of photoactive defects at the interface. This present study incorporates a hybrid Cd/In dual buffer in CZTSSe devices that demonstrate an average relative increase of 11.5% in PCE compared to CZTSSe devices with a standard CdS buffer. Current density-voltage analysis using a double-diode model revealed the presence of (i) a large recombination current in the quasi-neutral region (QNR) of the CZTSSe absorber in the standard CdS-based device, (ii) a large recombination current in the space-charge region (SCR) of the hybrid buffer CZTSSe-In2S3-CdS device, and (iii) reduced recombination currents in both the QNR and SCR of the CZTSSe-CdS-In2S3 device. This accounts for a notable 9.0% average increase in the short-circuit current density (JSC) observed in CZTSSe-CdS-In2S3 in comparison to the CdS-only CZTSSe solar cells. Energy-dispersive X-ray, secondary-ion mass spectroscopy, and grazing-incidence X-ray diffraction compositional analysis of the CZTSSe layer in the three types of kesterite solar cells suggest that there is diffusion of elemental In and Cd into the absorbers with a hybrid buffer. Enhanced Cd diffusion concomitant with a double postdeposition heat treatment of the hybrid buffer layers in the CZTSSe-CdS-In2S3 device increases carrier collection and extraction and boosts JSC. This is evidenced by electron-beam-induced current measurements, where higher current generation and collection near to the p-n junction is observed, accounting for the increase in JSC in this device. It is expected that optimization of the heat treatment of the hybrid buffer layers will lead to further improvements in the device performance.

Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells

Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells

An Investigation on Performance Enhancement for KF Post Deposition Treated CIGS Solar Cells Fabricated by Sputtering CIGS Quaternary Targets

Effect of K Doping on the Performance of Aqueous Solution‐Processed Cu(In,Ga)Se2 Solar Cell

Surface Modification of Cu(in,Ga)Se2 Film with a Post‐Deposition Treatment Using a KI Solution and Its Effect on Solar Cell Performance

The Effect of Temperature on Cu-K-In-Se Thin Films

Interface Formation between CdS and Alkali Postdeposition-Treated Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers-Key To Understanding the Efficiency Gain

Revealing Surface Modifications of Caesium Indium Selenium Treated Cu-rich Cu(In,Ga)Se2: A Study of the Suppression of the Interfacial Recombination

New Solution-Processed Surface Treatment to Improve the Photovoltaic Properties of Electrodeposited Cu(In,Ga)Se 2 (CIGSe) Solar Cells

Enhanced Carrier Collection in Cd/In-Based Dual Buffers in Kesterite Thin-Film Solar Cells from Nanoparticle Inks

New Solution-Processed Surface Treatment to Improve the Photovoltaic Properties of Electrodeposited Cu(In,Ga)Se2 (cigse) Solar Cells.

The effect of Na on Cu-K-In-Se thin film growth

Analyzing the Causes of Limited Performance Improvement in Cigs Devices after Potassium Fluoride Post-Deposition Treatment Using SCAPS

Impact of CsF Post-deposition Treatment on the Electronic Structure and Transport Properties of the Cu(In,Ga)Se2 Surface and Its Interface with CdS

Effects of Different Cs Distribution in the Film on the Performance of CIGS Thin Film Solar Cells

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

The Interfacial Reaction At Ito Back Contact In Kesterite Cztsse Bifacial Solar Cells

Interfaces of High-Efficiency Kesterite Cu 2 ZnSnS(e) 4 Thin Film Solar Cells

Path Towards High-Efficient Kesterite Solar Cells

Chemical Interface Structures in CdS/RbInSe2/Cu(In,Ga)Se2 Thin‐Film Solar Cell Stacks

Theoretical study on the kesterite solar cells based on Cu2ZnSn(S,Se)4 and related photovoltaic semiconductors*