Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells

Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson

DOI: https://doi.org/10.48550/arXiv.1704.01560

2017-03-19

Abstract:To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIGS) photovoltaic (PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PV performance. First, the effect of distributing K throughout bulk Cu1-xKxInSe2 absorbers at low K/(K+Cu) compositions (0 <= x <= 0.30) was studied. Efficiency, open-circuit voltage (VOC), and fill factor (FF) were greatly enhanced for x ~ 0.07, resulting in an officially-measured 15.0%-efficient solar cell, matching to the world record CuInSe2 efficiency. The improvements were a result of reduced interface and bulk recombination, relative to CuInSe2 (x ~ 0). However, higher x compositions had reduced efficiency, short-circuit current density (JSC), and FF due to greatly increased interface recombination, relative to the x ~ 0 baseline. Next, the effect of confining K at the absorber/buffer interface at high K/(K+Cu) compositions (0.30 <= x <= 0.92) was researched. Previous work showed that these surface layer growth conditions produced CuInSe2 with a large phase fraction of KInSe2. After optimization (75 nm surface layer with x ~ 0.41), these KInSe2 surface samples exhibited increased efficiency (officially 14.9%), VOC, and FF as a result of decreased interface recombination. The KInSe2 surfaces had features similar to previous reports for KF post-deposition treatments (PDTs) used in world record CIGS solar cells-taken as indirect evidence that KInSe2 can form during these PDTs. Both the bulk and surface growth processes greatly reduced interface recombination. However, the KInSe2 surface had higher K levels near the surface, greater lifetimes, and increased inversion near the buffer interface, relative to the champion bulk CKIS absorber. These characteristics demonstrate that K may benefit PV performance by different mechanisms at the surface and in the absorber bulk.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the surface and bulk effects of potassium (K) in high - efficiency Cu1 - xKxInSe2 (CKIS) solar cells. Specifically, the researchers aim to explore the following two aspects:

1. **Distribution of potassium in the bulk material**: Study the impact of potassium distribution throughout the CKIS absorption layer on photovoltaic performance, especially its performance at low K/(K + Cu) compositions (0 ≤ x ≤ 0.30).
2. **Confinement of potassium at the absorber/buffer layer interface**: Study the impact of potassium concentrated at the interface between the absorber layer and the buffer layer on photovoltaic performance, especially its performance at high K/(K + Cu) compositions (0.30 ≤ x ≤ 0.92).

Through research in these two aspects, the authors hope to reveal the specific mechanisms by which potassium at different locations (surface and bulk material) improves photovoltaic performance and provide a theoretical basis for optimizing CIGS solar cells.

### Specific problems and solutions

1. **Distribution of potassium in the bulk material**:
- The researchers prepared CKIS films with different K/(K + Cu) ratios (x = 0, 0.07, 0.22, 0.30) and evaluated their photovoltaic performance.
- It was found that when x ≈ 0.07, the efficiency, open - circuit voltage (VOC), and fill factor (FF) were significantly improved, reaching an officially measured efficiency of 15.0%, which is comparable to the world - record CuInSe2 efficiency.
- When x was further increased to 0.22 and 0.30, the short - circuit current density (JSC) and FF decreased, resulting in a decrease in overall efficiency, which was attributed to a higher interface recombination rate.

2. **Confinement of potassium at the absorber/buffer layer interface**:
- The researchers prepared KInSe2 surface layer samples with different thicknesses and K/(K + Cu) ratios.
- It was found that the optimized KInSe2 surface layer (about 75 nm thick, x ≈ 0.41) exhibited higher efficiency (officially measured 14.9%), VOC, and FF, which was due to reduced interface recombination.
- The characteristics of the KInSe2 surface layer are similar to those of the previously reported post - deposition treatment (PDT) with KF, indirectly indicating that KInSe2 may be formed during these PDT processes.

### Main conclusions

- Potassium at different locations (surface and bulk material) in CKIS materials has different impacts on photovoltaic performance.
- An appropriate amount of potassium (x ≈ 0.07) in the bulk material can significantly improve photovoltaic performance, while an excessive amount of potassium will lead to performance degradation.
- Forming an appropriate KInSe2 layer at the absorber/buffer layer interface can reduce interface recombination, thereby improving photovoltaic performance.

Through these studies, the authors not only revealed the mechanism of potassium in CIGS solar cells but also provided important experimental evidence for future design and optimization.