Abstract:Submitted for the MAR10 Meeting of The American Physical Society Topological insulator Sb2Te3 thin films grown by MBE 1 JIN-FENG JIA, GUANG WANG, XIE-GANG ZHU, YAO-YI LI, JING WEN, Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China, KE HE, LILI WANG, XUCUN MA2, HAI-JUN ZHANG, ZHONG FANG, Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, P. R. China, QI-KUN XUE, Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China — Atomically flat Sb2Te3 thin films were grown by molecular beam epitaxy (MBE) on Si(111) substrate. Layer-by-layer growth was characterized by real time reflection high-energy electron diffraction (RHEED) intensity oscillations. In situ angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) measurements reveal that the as-grown films are stoichiometric Sb2Te3. When the thickness is larger than two quintuple layers, the films show the predicted topological property with a single Dirac-cone on the surface. The measured band structure for the films with a thickness from one to five quintuple layers agrees well with our first principle calculations. 1The work is supported by NSFC and the National Basic Research Program from MOST of China. 2hjzhang@aphy.iphy.ac.cn Jinfeng Jia Key Lab for Atomic, Molecular and Nanoscience, Department of Physics, Tsinghua University, Beijing 100084, P. R. China Date submitted: 16 Nov 2009 Electronic form version 1.4

Epitaxial Growth and Band Structure of Te Film on Graphene

Growth of Epitaxial CdTe Thin Films on Amorphous Substrates Using Single Crystal Graphene Buffer

Growth of (111)-Orientated GdTe and TmTe Thin Films by Van Der Waals Molecular Beam Epitaxy

Ultrathin layers of beta-tellurene grown on highly oriented pyrolytic graphite by molecular-beam epitaxy

Electronic Band Structure of Epitaxial PbTe (111) Thin Films Observed by Angle-Resolved Photoemission Spectroscopy

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Molecular beam epitaxy growth and strain-induced bandgap of monolayer 1T′-WTe 2 on SrTiO 3 (001)

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Scanning tunneling microscopy study of epitaxial Fe 3 GeTe 2 monolayers on Bi 2 Te 3

Electronic Structures and Topological Properties of TeSe2 Monolayers*

Fermi-Level Tuning of EpitaxialSb2Te3Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping

Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping

Atomically smooth ultrathin films of topological insulator Sb 2 Te 3

Scanning Tunneling Microscopy Study of Epitaxial Fe3GeTe2 Monolayers on Bi2Te3

Electronic Structure of Molecular Beam Epitaxy Grown 1T^'-Mote_2 Film and Strain Effect

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Electronic structure of molecular beam epitaxy grown 1T$^\prime$-MoTe$_2$ film and strain effect

Atomically smooth ultrathin films of topological insulator Sb<sub>2</sub>Te<sub>3</sub>

Topological Insulator Sb2Te3 Thin Films Grown by MBE

Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates