Abstract:High-efficiency optoelectronic devices require materials with suitable band gap, excellent carrier mobility, strong light-matter interaction, and high thermal- and photostability. Herein, we report two layered materials of group VI, namely, SeS2 and TeS2, which meet all those desired criteria. Both materials are stable with 1T-MoS2-like structure, and exhibit in-direct gap semiconducting feature and possess extraordinary electronic transport properties with isotropic carrier mobilities outperforming their MoS2 analog. Using the GW approach for determining the quasiparticle electronic structure and Bethe-Salpeter equation accounting for the many-body excitonic effects, the optical properties of both materials have been identified. We find that exciton effects are significant in both materials that is characterized by the large binding energy of 0.66 and 0.84 eV for monolayer SeS2 and TeS2, respectively. The absorption edges lie in the optimal energy window of 1.0–1.5eV, which enables strong photoabsorption covering the whole visible-light region. Finally and importantly, we demonstrate that the in-direct nature of those materials can be violated by capping them with 2H-MoS2 to form a van der Waals heterostructure, while keeping the gap in the energy favorable region. Those physical and optical characteristics make few-layer SeS2 and TeS2 highly appealing for room-temperature light-emitting devices and, particularly, solar harvesting devices.

Electronic Structures and Topological Properties of TeSe2 Monolayers*

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