Trigonal multivalent polonium monolayers with intrinsic quantum spin Hall effects

Hairui Bao,Bao Zhao,Jiayong Zhang,Yang Xue,Hao Huan,Guanyi Gao,Zhongqin Yang
DOI: https://doi.org/10.1038/s41598-022-06242-3
IF: 4.6
2022-01-01
Scientific Reports
Abstract:Two-dimensional (2D) topological insulators, a type of the extraordinary quantum electronic states, have attracted considerable interest due to their unique electronic properties and promising potential applications. Recently, the successful fabrication of 2D Te monolayers ( i.e. tellurene) in experiments (Zhu et al., Phys Rev Lett 119:106101, 2017) has promoted researches on the group-VI monolayer materials. With first-principles calculations and tight-binding (TB) method, we investigate the structures and electronic states of 2D polonium (poloniumene), in which Po is a congener of Te. The poloniumene is found to have the tendency of forming a three-atomic-layer 1 T-MoS 2 -like structure (called trigonal poloniumene), namely, the central-layer Po atoms behave metal-like, while the two-outer-layer Po atoms are semiconductor-like. This unique multivalent behavior of the Po atoms is conducive to the structural stability of the monolayer, which is found to be an intrinsic quantum spin Hall insulator with a large band gap. The nontrivial topology originates from the p_x,y - p_z band inversion, which can be understood based on a built TB model. The poloniumene with different congener elements doped is also explored. Our results provide a thorough understanding of structures and electronic states of 2D polonium-related materials.
What problem does this paper attempt to address?