Alfonso Sanchez-Soares,Sarah L.T. Jones,John J. Plombon,Ananth P. Kaushik,Roger E. Nagle,James S. Clarke,James C. Greer
Abstract:Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tight binding methods to determine electron transport properties within the ballistic regime. The variation of the electron transmission as a function of film thickness as well as the different contributions to the overall electron transmission as a function of depth into the the films is examined. Transmission at the oxidized copper film surfaces is found to be universally low. Films with thickness greater than 2.7 nm exhibit a similar behavior in local transmission per unit area with depth from the film surface; transmission per unit area initially increases rapidly and then plateaus at a depth of approximately 0.35-0.5 nm away from the surface, dependent on surface facet. Unstrained films tend to exhibit a higher transmission per unit area than corresponding films under tensile strain.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand the electron transport properties of copper oxide thin films at the nanoscale, especially to study the effects of strain, thickness, and local surface environment on these properties. Specifically:
1. **Nanoscale effects**: As the size of metal nanostructures decreases to less than the electron mean - free path (about 40 nm in Cu), the collisions between electrons and the surface increase significantly, resulting in a sharp rise in resistivity. This phenomenon has been widely confirmed in copper nanostructures. Therefore, researchers need to understand whether copper can be effectively used as an interconnect material in future nanoscale devices.
2. **Effects of structural scattering sources**: The roles of different structural scattering sources (such as defects, surfaces, and grain boundaries) in determining the overall resistance of a specific geometry need to be understood in order to minimize the wire resistance of copper and other materials used for nano - electronic interconnects. For example, for gold thin films, Henriquez et al. found that electron scattering is largely determined by the grain size of the film. When the grain size is much smaller than the electron mean - free path, grain - boundary scattering becomes a key factor in resistivity; conversely, when the grain size is much larger than the electron mean - free path, surface scattering dominates.
3. **Effects of surface environment**: Changes in the surface environment can significantly affect the conductivity of copper thin films. For example, the electron scattering on the copper - vacuum surface is partly specular reflection, but changes in the surface environment can cause significant changes in conductivity. After depositing Ta or surface oxidation, the scattering on the film surface becomes diffuse. In addition, whether the density of states (DOS) of the coated metal matches the surface atoms of copper also affects resistivity.
To solve these problems, the paper studied the electron transport properties of oxidized single - crystal copper thin films by first - principles and semi - empirical calculation methods, and explored the effects of different oxidized surface environments, film thicknesses, and crystallographic directions in which electron transport occurs. The research results show that the presence of the oxide layer strongly modulates the electron transport on the film surface, and a linear relationship between the thickness of the copper film and the transport cross - section has been found.