Abstract:Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

Pseudodoping of Metallic Two-Dimensional Materials

Two-dimensional Polar Metal of a PbTe Monolayer by Electrostatic Doping.

Doping-Induced Spectral Shifts in Two Dimensional Metal Oxides

Symmetry-enforced double Weyl points, multiband quantum geometry, and singular flat bands of doping-induced states at the Fermi level

Doping Elemental 2D Semiconductor Te through Surface Se Substitutions

On Metal-Insulator Transitions due to Self-Doping

An effective framework for strange metallic transport

Novel doping alternatives for single-layer transition metal dichalcogenides

Charge transfer spin-polarons and ferromagnetism in weakly doped AB-stacked TMD heterobilayers

Versatile Post-Doping toward Two-Dimensional Semiconductors

Two-dimensional metallic ferroelectricity in PbTe monolayer by electrostatic doping

Ambipolar and N/p-Type Conduction Enhancement of Two-Dimensional Materials by Surface Charge Transfer Doping

A simple model for strange metallic behavior

Effects of a k-dependent Hybridization on the Fermi Surface of an Extended $d-p$ Hubbard Model

Dimensionality-Inhibited Chemical Doping in Two-Dimensional Semiconductors: the Phosphorene and MoS2 from Charge-Correction Method

Doping-driven pseudogap-metal-to-metal transition in correlated electron systems

Unconventional superconductivity from electronic dipole fluctuations

Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics

Mechanism of carrier doping induced magnetic phase transitions in two-dimensional materials

Dirac Fermions and Pseudomagnetic Fields in Two-Dimensional Electron Gases with Triangular Antidot Lattices

Itinerant Magnetism in the Triangular Lattice Hubbard Model at Half-doping: Application to Twisted Transition-Metal Dichalcogenides