Abstract:We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per site. Depending on the position of the additional band, both, a metal--to--insulator and an insulator--to--metal transition occur with increasing hybridization. The latter transition from a Mott insulator into a metal via ``self--doping'' was recently proposed to explain the low carrier concentration in $\rm Yb_4As_3$. We suggest a restrictive parameter regime for this transition making use of exact results in various limits. The predicted absence of the self--doping transition for nested Fermi surfaces is confirmed by means of an unrestricted Hartree--Fock approximation and an exact diagonalization study in one dimension. In the general case metal--insulator phase diagrams are obtained within the slave--boson mean--field and the alloy--analog approximation.
What problem does this paper attempt to address?
This paper aims to study the impact of unoccupied energy bands on the transport properties of strongly correlated electron systems. Specifically, the authors explore how these additional orbitals (i.e., ligand orbitals) affect the metal-insulator transition of the system by coupling them with the Hubbard model.
### Research Background
- **Mott-Hubbard Insulator**: In certain transition metal oxides, despite the presence of partially filled d-bands, strong Coulomb repulsion prevents electrons from moving freely, causing the system to behave as an insulator.
- **Hubbard Model**: Describes a system where each lattice site has one electron, which can hop between sites, and two electrons with opposite spins repel each other when they occupy the same site.
- **Extended Hubbard Model**: Introduces an additional spin-orbit to more comprehensively describe the electronic behavior in transition metal compounds.
### Research Questions
- **Metal-Insulator Transition**: Investigates how the system transitions from an insulator to a metal or from a metal to an insulator when additional orbitals are coupled with the main orbitals.
- **Self-Doping Mechanism**: Focuses on the insulator-metal transition achieved through "self-doping" (i.e., electrons transition to ligand orbitals, creating holes in the main orbitals), which can explain the formation of low carrier concentration in certain rare-earth compounds (e.g., Yb₄As₃).
### Main Findings
- **Behavior in Extreme Limits**:
- When the hybridization strength \( V \) is zero, the system behaves as a Mott-Hubbard insulator or a charge-transfer insulator.
- When the hybridization strength \( V \) approaches infinity, the system can be simplified to a Hubbard model with reduced Coulomb repulsion and hopping matrix elements.
- **Behavior at Finite Hybridization Strength**:
- Within certain parameter ranges, as the hybridization strength increases, the system can transition from an insulator to a metal.
- Using different approximation methods (such as unrestricted Hartree-Fock approximation, exact diagonalization, slave-boson mean-field approximation, and alloy analogy approximation), the metal-insulator phase diagram was studied under different lattice symmetries and dimensions.
### Conclusion
- **Self-Doping Mechanism**: Within specific parameter ranges, the system can transition from an insulator to a metal through the "self-doping" mechanism, providing new possibilities for understanding the formation of low carrier concentration metals.
- **Theoretical Predictions**: Through various approximation methods, the paper predicts the metal-insulator phase diagram under different conditions, providing a theoretical basis for further experimental verification.
In summary, this paper introduces additional orbitals to study the metal-insulator transition in strongly correlated electron systems in detail, particularly exploring the role of the "self-doping" mechanism in this process.