E.Z. Kuchinskii,N.A. Kuleeva,M.V. Sadovskii
Abstract:We present comparative theoretical investigation of thermoelectric power and Hall effect in the Hubbard model for correlated metal and Mott insulator (considered as prototype cuprate superconductor) for different concentrations of current carriers. Analysis is performed within standard DMFT approximation. For Mott insulator we consider the typical case of partial filling of the lower Hubbard band (hole doping). We calculate the dependence of thermopower on doping level and determine the critical concentration of carriers corresponding to sign change of thermopower. An anomalous dependence of thermopower on temperature is obtained significantly different from linear temperature dependence typical for the usual metals. The role of disorder scattering is analyzed on qualitative level. The comparison with similar studies of the Hall effect shows, that breaking of electron - hole symmetry leads to the appearance of the relatively large interval of band - fillings (close to the half - filling) where thermopower and Hall effects have different signs. We propose a certain scheme allowing to determine the number of carriers from ARPES data and perform semi - quantitative estimate of both thermopower and Hall coefficient using the usual DFT calculations of electronic spectrum.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the dependence of thermopower and Hall effect on carrier concentration in strongly correlated metals and doped Mott insulators. Specifically, the research focuses on the following points:
1. **Theoretical analysis of thermopower and Hall effect**: The paper conducts a systematic study of the Hubbard model through the dynamical mean - field theory (DMFT) and explores the variation laws of thermopower and Hall effect under different carrier concentrations.
2. **Temperature dependence**: The behaviors of thermopower and Hall effect at different temperatures are studied, especially in the low - temperature and high - temperature regions.
3. **Doping effect**: The thermopower and Hall effect in Mott insulators with partially filled lower Hubbard bands (i.e., hole - doping) are mainly studied, and the key carrier concentration for the sign change of thermopower is determined.
4. **Breaking of electron - hole symmetry**: The influence of the breaking of electron - hole symmetry on thermopower and Hall effect is analyzed, especially in the case close to half - filling, where thermopower and Hall effect may have different signs.
5. **Effect of disorder scattering**: The influence of disorder scattering on thermopower and Hall effect is qualitatively analyzed, especially the behavior in the high - temperature region.
### Specific problem description
- **Research background**: The behaviors of thermopower and Hall effect in strongly correlated systems are a long - standing problem, and especially the experimental research on cuprate superconductors at different doping levels is still of great significance.
- **Basic concepts**: These systems are usually considered to be strongly correlated, and their metallic and superconducting states are achieved by doping the prototype Mott insulator, which can be described by the Hubbard model.
- **Method**: The most mature method is to use the dynamical mean - field theory (DMFT), which can accurately describe the system in the high - dimensional limit.
- **Research purpose**: To systematically study the concentration and temperature dependences of thermopower and Hall effect at different doping levels and compare them with the previous research results of Hall effect.
### Main findings
- **Abnormal temperature dependence of thermopower**: At certain doping levels, thermopower shows a non - linear temperature dependence different from that of ordinary metals.
- **Key carrier concentration**: The key carrier concentration for the sign change of thermopower is determined, which is crucial for understanding the thermoelectric properties of materials.
- **Effect of breaking of electron - hole symmetry**: The breaking of electron - hole symmetry leads to different signs of thermopower and Hall effect in the case close to half - filling.
- **Effect of disorder scattering**: The influence of disorder scattering on thermopower is relatively significant. Especially at low doping levels, disorder scattering will lead to a decrease in the absolute value of thermopower.
### Conclusion
Through the DMFT calculation of the Hubbard model, this paper studies in detail the concentration and temperature dependences of thermopower and Hall effect in strongly correlated metals and doped Mott insulators, providing an important theoretical basis for understanding the thermoelectric properties of these materials.