Jun Z. Huang,Yu Wang,Pengyu Long,Yaohua Tan,Michael Povolotskyi,Gerhard Klimeck
Abstract:Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFETs by quantum transport simulations. It is found that for an InAs UTB confined in [001] orientation, uniaxial compressive strain in [100] or [110] orientation shrinks the band gap meanwhile reduces (increases) transport (transverse) effective masses. Thus it improves the ON state current of both n-type and p-type UTB InAs TFETs without lowering the source density of states. Applying the strain locally in the source region makes further improvements by suppressing the OFF state leakage. For p-type TFETs, the locally strained area can be extended into the channel to form a quantum well, giving rise to even larger ON state current that is comparable to the n-type ones. Therefore strain engineering is a promising option for improving complementary circuits based on UTB III-V TFETs.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to improve the performance of ultra - thin - body (UTB) tunneling field - effect transistors (TFETs) based on III - V materials through strain engineering, especially to increase the on - current (ION) of n - type and p - type devices while maintaining a low off - current (IOFF). Specifically, the paper explores how to optimize the performance of InAs UTB TFETs by applying uniaxial compressive strain to achieve high - performance, low - power complementary circuits.
### Main problems and solutions:
1. **Background and challenges**:
- Tunneling field - effect transistors (TFETs) have the potential in constructing future low - power integrated circuits due to their steep sub - threshold swing (SS). However, their drive current (ION) is usually limited by the small tunneling probability, resulting in significant switching delays.
- Traditional improvement methods include doping engineering, selection of different channel materials, heterojunction design, etc., but these methods have their own limitations.
2. **Advantages of strain engineering**:
- Strain can reduce the bandgap and/or decrease the effective mass, thereby increasing the tunneling probability. However, strain also brings some side effects, such as increasing source - to - drain tunneling and bipolar leakage, and reducing the valence - band density of states (DOS), resulting in an increase in source Fermi degeneracy and a deterioration of the sub - threshold swing.
- Local strain can alleviate these side effects by applying strain only in the source region, thus improving device performance without affecting the channel region.
3. **Research content**:
- Through quantum transport simulations, the effects of global and local strains on InAs UTB n - type and p - type TFETs were studied.
- The effects of different types of strains (uniaxial compressive strain, biaxial strain) and crystal orientations ([001]/[100] directions) on device performance were explored.
- It was found that by selecting the [001]/[100] directions as the confinement/transport directions and applying uniaxial compressive strain along the transport direction, the on - current of n - type and p - type TFETs can be significantly increased, especially the improvement of p - type TFETs is more obvious.
4. **Main conclusions**:
- Uniaxial compressive strain can significantly reduce the bandgap and transport effective mass while increasing the lateral effective mass, thereby improving the performance of InAs UTB TFETs.
- The application of local strain not only increases the on - current but also reduces the leakage current in the off - state, further enhancing device performance.
- Strain engineering provides a promising technical means for realizing low - power, high - performance complementary circuits based on III - V UTB TFETs.
### Formula representation:
- Bandgap change: \[ E_g' = E_g+\Delta E_g \]
- Effective mass change: \[ m^* = m_0\left(\frac{\hbar^2}{2E_g}\right) \]
where \( E_g \) is the original bandgap, \( \Delta E_g \) is the bandgap change caused by strain, \( m_0 \) is the free electron mass, and \( \hbar \) is the reduced Planck constant.
In conclusion, through systematic quantum transport simulations, this paper shows the potential of strain engineering in improving the performance of InAs UTB TFETs, especially the significant improvement for p - type devices, providing new ideas for the design of future low - power integrated circuits.