Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

Multiple Control of Few-layer Janus MoSSe Systems

Atomistic modeling of a superconductor-transition-metal dichalcogenide-superconductor Josephson junction

Interlayer Coupling Limit in Artificially Stacked MoS2 Homojunctions

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Asymmetric edge supercurrents in MoTe2 Josephson junctions

Observation of Josephson coupling through an interlayer of antiferromagnetically ordered chromium

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Theoretical study of superconducting diode effect in planar $T_{d}-MoTe_{2}$ Josephson junctions

Supercurrent and Multiple Andreev Reflections in InSb Nanosheet SNS Junctions

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

Transport properties of spin-triplet superconducting monolayer $MoS_2$

Anomalous temperature dependence of multiple Andreev reflections in a topological insulator Josephson junction

Magnetic Field Enhanced Single Particle Tunneling in MoS2–superconductor Vertical Josephson Junction*

Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer

Proximity Effect, Andreev Reflections, and Charge Transport in Mesoscopic Superconducting-Semiconducting Heterostructures

Josephson Effect in NbS$_{2}$ van der Waals Junctions

Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide

Ultimately short ballistic vertical graphene Josephson junctions

Thickness-dependent electronic relaxation dynamics in solution-phase redox-exfoliated MoS2 heterostructures