Abstract:Quantum devices present the potential for unparalleled computing and communica-tions capabilities; however, the cryogenic temperatures required to successfully control and read out many qubit platforms can prove to be very challenging to scale. Recently, there has emerged an interest in using microwave photonics to deliver control signals down to ultracold stages via optical fiber, thereby reducing thermal load and facilitating dense wavelength multiplexing. Photodetectors can then convert this optical energy to electrical signals for qubit control. The fidelity of the quantum operations of interest therefore depend heavily upon the characteristics of the photodiode, yet experimental demonstrations of fiber-coupled photodetection systems at low temperatures are relatively few in number, leaving important open questions regarding how specific detectors may perform in real-world cryogenic settings. In this work, we examine a highly linear modified uni-traveling carrier photodiode (MUTC-PD) under C-band illumination (1530-1565 nm) at three temperature regimes (300 K, 80 K, and similar to 4 K) and multiple bias condi-tions. Our findings of reduced responsivity but preserved bandwidth are consistent with previous studies, while our saturation tests suggest a variety of potential applications for MUTC-PDs in cryogenic microwave photonics with and without electrical bias. Overall, our results should provide a valuable foundation for the continued and expanding use of this detector technology in quantum information processing.

Characterization of Zero-Bias Microwave Diode Power Detectors at Cryogenic Temperature

Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode

High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode

Cryogenic sensor enabling broad-band and traceable power measurements

Characterizing the attenuation of coaxial and rectangular microwave-frequency waveguides at cryogenic temperatures

Dielectric‐Doped 2D Tellurium Diodes for Zero‐Bias Radio Frequency Power Detection

Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields

Investigation of modified uni-traveling carrier photodiode for cryogenic microwave photonic links

Monte Carlo Comparisons to a Cryogenic Dark Matter Search Detector with low Transition-Edge-Sensor Transition Temperature

Lateral AlGaN/GaN Diode with MIS-gated Hybrid Anode for High-Sensitivity Zero-Bias Microwave Detection

Miniaturized Power Detection Module Operating in Millimeter Wave Band

Compact V-Band MMIC Square-law Power Detector with 70 Db Dynamic Range Exploiting State-of-the-art Graphene Diodes

Microwave quantum diode

Microwave Measurement of Shot Noise in Resonant Tunneling Diodes

Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field

Application of Zero-Bias Quasi-Optical Schottky-Diode Detectors for Monitoring Short-Pulse and Weak Terahertz Radiation

Characterization of Silicon Photomultiplier Photon Detection Efficiency at Liquid Nitrogen Temperature

Dynamic Characterization of 1.2 Kv SiC Power MOSFET Body Diode at Cryogenic and High Temperatures

Investigation of Microwave Transducers for Linearity Dependence and Applications in Quantum Networking

Zero-Bias 50-dB Dynamic Range Linear-in-dB V-Band Power Detector Based on CVD Graphene Diode on Glass