Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field

Bin Fang,Mario Carpentieri,Xiaojie Hao,Hongwen Jiang,Jordan A. Katine,Ilya N. Krivorotov,Berthold Ocker,Juergen Langer,Kang L. Wang,Baoshun Zhang,Bruno Azzerboni,Pedram Khalili Amiri,Giovanni Finocchio,Zhongming Zeng

DOI: https://doi.org/10.1038/ncomms11259

2014-10-18

Abstract:Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts, which cannot operate at low input power. Here, we demonstrate nanoscale microwave detectors exhibiting record-high detection sensitivity of 75400 mV mW$^{-1}$ at room temperature, without any external bias fields, for input microwave power down to 10 nW. This sensitivity is 20x and 6x larger than state-of-the-art Schottky diode detectors (3800 mV mW$^{-1}$) and existing spintronic diodes with >1000 Oe magnetic bias (12000 mV mW$^{-1}$), respectively. Micromagnetic simulations supported by microwave emission measurements reveal the essential role of the injection locking to achieve this sensitivity performance. The results enable dramatic improvements in the design of low input power microwave detectors, with wide-ranging applications in telecommunications, radars, and smart networks.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to design a high - sensitivity spin - torque diode (STT - diode) microwave detector that can operate at room temperature and under low - input microwave power conditions without an external biasing magnetic field. Specifically, the author aims to achieve the following goals:

1. **No external biasing magnetic field required**: Traditional STT - diodes require an external biasing magnetic field to improve detection sensitivity, which increases the complexity and cost of the device. This paper proposes a solution that does not require an external magnetic field.

2. **High sensitivity**: The research shows a nanoscale magnetic tunnel junction (MTJ) microwave detector that achieves a record - high detection sensitivity (75400 mV/mW) at room temperature, far exceeding existing Schottky diodes and existing spintronic diodes.

3. **Low - input microwave power**: The detector can operate at a very low - input microwave power (as low as 10 nW), while traditional Schottky diodes usually perform poorly under such low - power conditions.

Through these improvements, this research provides new ideas for the design of low - input - power microwave detectors and has broad application prospects, especially in fields such as telecommunications, radar, and intelligent networks.

### Key technical means

To achieve the above goals, the author adopts the following key technical means:

1. **Freely - magnetized vertical layer**: Use a freely - magnetized vertical layer material so that the device can operate without an external magnetic field.

2. **Injection - locking mechanism**: Combine a DC biasing current and an input microwave signal and use the injection - locking mechanism to enhance detection sensitivity.

3. **High tunneling magnetoresistance (TMR) material stacking**: Adopt an MgO - based MTJ material stacking to ensure a high TMR ratio, thereby improving device performance.

### Results and significance

Through these improvements, the author successfully shows that under low - input microwave power (< 100 nW) and without an external magnetic field, a detection sensitivity as high as 75400 mV/mW is achieved. This result is not only significantly better than existing semiconductor Schottky diodes and spintronic diodes but also provides new possibilities for future compact on - chip microwave detector designs.

In summary, this research shows how to significantly improve the performance of microwave detectors through innovative material selection and physical mechanisms, and has pushed spintronic microwave detectors a big step forward towards practical applications.