Abstract:Graphene offers exceptional properties, such as ultra-high carrier mobility, near-ballistic transport characteristics, and ultra-high-frequency operational response, making it an ideal material for radio-frequency devices and high-speed optical communications. To realize its potential applications, high-quality graphene films must be integrated onto target substrates with reliability, uniformity, and scalability. Despite significant progress in the chemical vapor deposition of high-quality graphene on catalytic metal substrates, the transfer of such films onto application-targeted substrates remains necessary for large-scale technological use, but it faces challenges like contaminations and cracks. Graphene's flexibility and single-atom thickness make it vulnerable to damage and folding during the transfer process due to force disturbances and uneven force distribution. Traditional graphene transfer methods employ organic polymers as a medium and remove them using organic solvents after transferring graphene onto the desired substrates. However, this repetitive process generates organic waste and leaves unavoidable contamination due to the limited solubility of the polymer. Furthermore, selective interlacing of organic solvents during polymer removal can detach graphene from the substrate and cause cracks. In this study, we demonstrate a novel approach to address these issues. Instead of using organic polymers, we directly use the photoresist as the transfer medium to mechanically delaminate graphene from the metal growth substrate onto the targeted substrate. By doing so, we eliminate the need for repeated polymer coating on the graphene surface, enabling successful transfer without crack formation, wrinkles, or unintentional doping. The strong interaction between graphene and the photoresist, coupled with the weakened interaction between graphene and the growth substrate due to oxidation, ensures crack-free delamination. Moreover, the photoresist serves as a patterned mask plate for exposure, etching, and other subsequent device fabrication processes. As a result, the electrical properties of graphene are improved, achieving an average carrier mobility of 6200 cm(2)center dot V-1 center dot s(-1). This integrated approach not only enhances the device performance of two-dimensional materials but also paves the way for future applications of such materials in electronics and photonics. In conclusion, our method offers a promising solution for the successful transfer and device fabrication of graphene, enhancing its potential in the field of electronics and photonics.

A Capillary-Force-Assisted Transfer for Monolayer Transition-Metal-Dichalcogenide Crystals with High Utilization

Ubiquitous Energy Conversion Of Two-Dimensional Molecular Crystals

Chemically Driven Interfacial Coupling in Charge-Transfer Mediated Functional Superstructures.

Crystallization-Mediated Magnetoelectric Response in Two-Dimensional Molecular Charge Transfer Crystals

Facile fabrication of 2D material multilayers and vdW heterostructures with multimodal microscopy and AFM characterization

High-Fidelity Transfer of Chemical Vapor Deposition Grown 2D Transition Metal Dichalcogenides Via Substrate Decoupling and Polymer/Small Molecule Composite.

Strategy for transferring van der Waals materials and heterostructures

High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices

Etchant-free transfer of 2D nanostructures

Damage-free transfer mechanics of 2-dimensional materials: competition between adhesion instability and tensile strain

Universal Transfer and Stacking of Chemical Vapor Deposition Grown Two-Dimensional Atomic Layers with Water-Soluble Polymer Mediator

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Transfer assembly for two-dimensional van der Waals heterostructures

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Crack-Free Transfer of Graphene Wafers Via Photoresist As Transfer Medium

A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances

Damage-free and Rapid Transfer of CVD-grown Two-Dimensional Transition Metal Dichalcogenides by Dissolving Sacrificial Water-Soluble Layers.

Ultrafast Interlayer Electron Transfer in Incommensurate Transition Metal Dichalcogenide Homobilayers.

Surficial Marangoni Flow‐Induced Growth of Ultrathin 2D Molecular Crystals on Target Substrates

Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

Recent Progress of Transfer Methods of Two-Dimensional Atomic Crystals and High-Quality Electronic Devices