Gated Spin Manipulation in Bipolar Rashba Semiconductor: Janus TeSSe Monolayer
Shaobo Chen,Wanjun Yan,Yee Sin Ang
DOI: https://doi.org/10.1039/d4cp02910k
IF: 3.3
2024-10-15
Physical Chemistry Chemical Physics
Abstract:It is very important to realize the electronically controlled spin direction for spintronics devices. Inspired by the Bipolar Rashba Semiconductor (BRS) concept recently proposed by Yang's group (J. Phys. Chem. Lett. 2023, 14, 11292), which presented a novel solution for spin precession manipulation using BRS. Through first-principles calculations, we confirm the Janus TeSSe is a BRS. Therefore, in a spin field-effect transistor based on the BRS Janus TeSSe, the spin texture direction can be electronically controlled by a gate voltage. We describe in detail the special spin opposite spin texture of Janus TeSSe, and how the gate voltage regulates the spin direction of the physical mechanism. Furthermore, The regulation of energy band and Rashba coefficient by charge doping, external electric field, and strain engineering are studied. In summary, we propose a new Janus BRS TeSSe monolayer capable of achieving electrical control of rotation through electrical gating, which enriches the family of two-dimensional BRS materials and inspires experimental researchers to conduct studies related to spin manipulation.
chemistry, physical,physics, atomic, molecular & chemical