P. Wójcik,J. Adamowski
Abstract:A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons and switching the transistor into the high-resistance state (off state). The on/off state of the transistor can be controlled by the all-electric means using Rashba spin-orbit coupling that can be tuned by the voltages applied to the side electrodes.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to design a new type of spin transistor, which can realize its switching function by means of electrical control without the need for an external magnetic field. Specifically, the author proposes a scheme to control the spin - polarized electron transport based on the Landau - Zener transition driven by a helical magnetic field.
### Background and Problems
The design of traditional spin - field - effect transistors (spin - FET) faces several physical obstacles:
1. **Low spin - injection efficiency**: The spin - injection efficiency from a ferromagnet into a semiconductor is low, resulting in resistance mismatch.
2. **Spin relaxation**: The electron spin is prone to relaxation during the transmission process, reducing the signal strength.
3. **Diffusion of the spin - precession angle**: These effects work together, making the actual realization of a functional spin - FET an experimental challenge.
To overcome these problems, researchers have explored two main directions:
1. **Using spin filters**: Such as quantum - dot contacts (QPC) as spin injectors and detectors to improve conductivity oscillations.
2. **Proposing new spin - transistor designs**: Avoiding the physical limitations of traditional spin - FET, for example, not requiring an external magnetic field.
### Proposed Solution
The solution proposed in this paper is a spin - transistor design based on a helical magnetic field, where:
- The **helical magnetic field** is generated by ferromagnetic stripes located above the conduction channel.
- The **Rashba spin - orbit coupling** is induced by the lateral electric field applied by the side electrodes, and the spin - orbit coupling constant α can be adjusted.
This design utilizes the following key mechanisms:
- **Landau - Zener transition**: When the Rashba effective magnetic field compensates for the helical magnetic field, a Landau - Zener transition occurs, causing electron backscattering and thus making the transistor enter a high - resistance state (off - state).
- **All - electrical control**: By changing the voltage of the side electrodes, the Rashba spin - orbit coupling constant α can be adjusted, thereby controlling the switching state of the transistor.
### Mathematical Model
The Hamiltonian of the system is:
\[
\hat{H}=\frac{\hbar^{2}k^{2}}{2m^{*}}+\frac{1}{2}g_{\text{eff}}\mu_{B}B_{h}(r)\cdot\sigma+\alpha\sigma_{z}k_{x}
\]
where:
- \(m^{*}\) is the mass of conduction - band electrons,
- \(\hbar k = - i\hbar\nabla\) is the momentum operator,
- \(1\) is the \(2\times2\) unit matrix,
- \(\sigma = (\sigma_{x},\sigma_{y},\sigma_{z})\) is the Pauli matrix vector,
- \(g_{\text{eff}}\) is the effective \(g\) - factor,
- \(\mu_{B}\) is the Bohr magneton,
- \(\alpha\) is the Rashba spin - orbit coupling constant,
- \(B_{h}(r)\) is the helical magnetic field, in the form of:
\[
B_{h}(r)=B_{h}\left(\sin\left(\frac{2\pi(x - x_{0})}{a}\right),0,\cos\left(\frac{2\pi(x - x_{0})}{a}\right)\right)
\]
### Experimental Results and Conclusions
Through numerical calculations, the author shows how to control the conductivity of the transistor by adjusting the Rashba spin - orbit coupling constant α. For a specific Fermi energy, the Landau - Zener transition probability can be made to reach 1 by adjusting α, thereby achieving a complete electrically - controlled switching function.
This design combines the existing experimentally - verified parts (such as the helical magnetic field and Rashba spin - orbit coupling), so it is expected to realize a functional spin - transistor in the future.
### Summary
This paper proposes a new type of spin - transistor design that realizes its switching function by means of electrical control and solves the physical obstacles faced by traditional spin - FET. This design not only improves the spin - injection efficiency but also avoids the need for an external magnetic field and has important application prospects.