Electric Field Control of Spin Transport

Sangeeta Sahoo,Takis Kontos,Jürg Furer,Christian Hoffmann,Matthias Gräber,Audrey Cottet,Christian Schönenberger

DOI: https://doi.org/10.1038/nphys149

2005-11-03

Abstract:Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are separated by a thin tunneling barrier. In such devices, R depends on the orientation of the magnetisation of the electrodes. It is usually larger in the antiparallel than in the parallel configuration. The relative difference of R, the so-called magneto-resistance (MR), is then positive. Common devices, such as the giant magneto-resistance sensor used in reading heads of hard disks, are based on this phenomenon. The MR may become anomalous (negative), if the transmission probability of electrons through the device is spin or energy dependent. This offers a route to the realisation of gate-tunable MR devices, because transmission probabilities can readily be tuned in many devices with an electrical gate signal. Such devices have, however, been elusive so far. We report here on a pronounced gate-field controlled MR in devices made from carbon nanotubes with ferromagnetic contacts. Both the amplitude and the sign of the MR are tunable with the gate voltage in a predictable manner. We emphasise that this spin-field effect is not restricted to carbon nanotubes but constitutes a generic effect which can in principle be exploited in all resonant tunneling devices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve spin - transport control by electric fields. Specifically, it is to realize that the sign and magnitude of magnetoresistance (MR) can be regulated by gate voltages. In traditional spin - valve devices, magnetoresistance usually exhibits a positive magnetoresistance effect (i.e., the resistance in the antiparallel configuration is greater than that in the parallel configuration), but in some cases, the magnetoresistance can become negative. This phenomenon makes it possible to realize tunable magnetoresistance devices.

### Research Background
Spintronics is a method of using electron spin to control the conductance of electronic devices. A basic building block is the spin - valve, which consists of two ferromagnetic electrodes and an intermediate tunneling barrier. In such a device, the resistance \( R \) depends on the magnetization direction of the electrodes: usually the resistance in the antiparallel configuration is greater than that in the parallel configuration, so the relative difference \( \text{TMR}=\frac{R_{\text{AP}} - R_P}{R_P} \) is positive. However, in some cases, TMR can be negative, which provides the possibility of realizing gate - tunable magnetoresistance devices.

### Main Problem
The focus of this paper is on controlling spin - transport in carbon nanotubes (CNT) by electric fields, especially on regulating the sign and magnitude of magnetoresistance (MR) by gate voltages. The researchers hope to prove that in devices where carbon nanotubes are in contact with ferromagnetic electrodes, the sign and magnitude of magnetoresistance can be regulated by changing the gate voltage.

### Experimental Results
1. **Multi - walled Carbon Nanotubes (MWNT)**:
- Under different gate voltages, the change of the linear response resistance \( R \) with the magnetic field \( H \) was measured.
- It was found that the sign and magnitude of magnetoresistance (TMR) change with the change of the gate voltage \( V_g \). For example, when \( V_g=- 3.1 \, \text{V}\), TMR is + 2.9%, while when \( V_g = - 3.3 \, \text{V}\), TMR is - 3.5%.
- The change of TMR with the gate voltage shows periodic oscillations, with a period of approximately \( \Delta V_{g}^{\text{TMR}}=0.4\sim0.75 \, \text{V}\).

2. **Single - walled Carbon Nanotubes (SWNT)**:
- At a lower temperature (1.85 K), quantum dot behavior was observed, and the sign and magnitude of TMR also change with the gate voltage.
- The oscillation amplitude of TMR in SWNT is larger, ranging from - 7% to + 17%.

### Conclusion
The research shows that the sign and magnitude of magnetoresistance between ferromagnetic electrodes in carbon nanotubes can be effectively regulated by gate voltages. This finding provides important experimental basis and technical means for the development of new spintronic devices. The research also shows that this regulation mechanism may be caused by quantum interference effects, rather than Rashba spin - orbit interactions.

### Formula Summary
- **TMR Definition**:
\[
\text{TMR}=\frac{R_{\text{AP}} - R_P}{R_P}
\]
where \( R_{\text{AP}}\) and \( R_P\) are the resistances in the antiparallel and parallel magnetization configurations respectively.

- **Breit - Wigner Transmission Probability Formula**:
\[
T_\sigma=\frac{\Gamma_\sigma^L \Gamma_\sigma^R}{(E - E_0^\sigma)^2+(\Gamma_\sigma^L+\Gamma_\sigma^R)^2 / 4}
\]
where \( \Gamma_\sigma^{L(R)}=\gamma^{L(R)}(1 + \sigma P^{L(R)})\) is the spin - dependent coupling strength, and \( E_0^\sigma\) is the spin - dependent energy level of the quantum dot.

Through these research results, the author shows how to regulate the magnetoresistance between ferromagnetic electrodes in carbon nanotubes by gate voltages.