Ferroelectric polarization switching with a remarkably high activation-energy in orthorhombic GaFeO3 thin films

Seungwoo Song,Hyun Myung Jang,Nam-Suk Lee,Jong Y. Son,Rajeev Gupta,Ashish Garg,Jirawit Ratanapreechachai,James F. Scott
DOI: https://doi.org/10.48550/arXiv.1510.05359
2015-10-19
Abstract:Orthorhombic GaFeO3 (o-GFO) with the polar Pna21 space group is a prominent ferrite by virtue of its piezoelectricity and ferrimagnetism, coupled with magneto-electric effects. Herein, we unequivocally demonstrate a large ferroelectric remanent polarization in undoped o-GFO thin films by adopting either a hexagonal strontium titanate (STO) or a cubic yttrium-stabilized zirconia (YSZ) substrate. The polarization-electric-field hysteresis curves of the polar c-axis-grown o-GFO film on a SrTiO3/STO substrate show the net switching polarization of ~35 {\mu}C/cm2 with an unusually high coercive field of +-1400 kV/cm at room temperature. The PUND measurement also demonstrates the switching polarization of ~26 {\mu}C/cm2. The activation energy for the polarization switching, as obtained by density-functional theory calculations, is remarkably high, 1.05 eV per formula unit. This high value accounts for the observed stability of the polar Pna21 phase over a wide range of temperature up to 1368 K.
Materials Science
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