Nanoscale Magnetization Reversal by Magnetoelectric Coupling Effect in Ga 0.6 Fe 1.4 O 3 Multiferroic Thin Films

Jun Zhang,Wuhong Xue,Tiancong Su,Huihui Ji,Guowei Zhou,Fengxian Jiang,Zhiyong Quan,Xiaohong Xu

DOI: https://doi.org/10.1021/acsami.0c21659

2021-03-19

Abstract:The control of magnetism by electric means in single-phase multiferroic materials is highly desirable for the realization of next-generation magnetoelectric (ME) multifunctional devices. Nevertheless, most of these materials reveal either low working temperature or antiferromagnetic nature, which severely limits the practical applications. Herein, we selected room-temperature multiferroic Ga_0.6Fe_1.4O₃ (GFO) with ferrimagnetism to study electric-field-induced nanoscale magnetic domain reversal. The GFO thin film fabricated on the (111)-orientated Nb-doped SrTiO₃ single-crystal substrate was obtained through the pulsed laser deposition method. The test results indicate that the thin film not only exhibits ferroelectricity but also ferrimagnetism at room temperature. More importantly, reversible and nonvolatile nanoscale magnetic domains reversal under pure electrical fields is further demonstrated by taking advantage of its ME coupling effect with dependent origins based on iron ions. When providing an appropriate applied voltage, clear magnetic domain structures with large size can be easily manipulated. Meanwhile, the change ratio of the electrically induced magnetizations in the defined areas can reach up to 72%. These considerable merits of the GFO thin film may provide a huge potential in the ME multifunctional devices, such as the multi-value, low-energy-consuming, and nonvolatile memory and beyond.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c21659?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c21659</a>.Simple schematic for measuring <i>P</i>–<i>E</i> loop and leakage current density versus voltage (<i>J</i>–<i>V</i>) curve; Remanent polarization–electric field (<i>P</i>_r–<i>E</i>) loop measured by a PUND method; phase-voltage and amplitude–voltage curves of the GFO thin film; local surface topography of the GFO thin film; and corresponding MFM phase images after exerting a −8 V voltage and reversing the tip magnetization (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c21659/suppl_file/am0c21659_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology