Band Alignment and Enhanced Interfacial Conductivity Manipulated by Polarization in a Surfactant-Mediated Grown κ-Ga 2 O 3 /In 2 O 3 Heterostructure
Yue Kuang,Xuanhu Chen,Tongchuan Ma,Qianqian Du,Yanfang Zhang,Jinggang Hao,Fang-Fang Ren,Bin Liu,Shunming Zhu,Shulin Gu,Rong Zhang,Youdou Zheng,Jiandong Ye
DOI: https://doi.org/10.1021/acsaelm.0c00947
IF: 4.494
2021-01-18
ACS Applied Electronic Materials
Abstract:Integration of intriguing ferroelectric κ-Ga<sub>2</sub>O<sub>3</sub> on other oxide semiconductors opens an exciting avenue to invoke emergent transport phenomena and enable rational design of advanced device architectures, whereas the fundamental growth dynamics and physical properties of metastable κ-Ga<sub>2</sub>O<sub>3</sub> are still far unexplored. In this work, we report on the heterostructure construction of single crystalline metastable orthorhombic κ-Ga<sub>2</sub>O<sub>3</sub> epilayers and cubic In<sub>2</sub>O<sub>3</sub>(111) by means of laser molecular beam epitaxy. Elements of Sn and In are found to segregate to the growth surface and serve as surfactants to reduce the total surface energy and diffusion barrier of oxygen adatoms, hence producing Ga-rich conditions on the growth front, which in turn facilitates the stabilization of κ-phase Ga<sub>2</sub>O<sub>3</sub>. Depth-profiled X-ray photoemission spectral (XPS) analysis identified a type-I band alignment with a conduction band offset (CBO) of 0.45 eV and a valence band offset (VBO) of −1.15 eV for a κ-Ga<sub>2</sub>O<sub>3</sub>/In<sub>2</sub>O<sub>3</sub> heterostructure. Determined by the analysis of Hall results with a double-layer model, a two-dimensional electron gas (2DEG) with a sheet carrier concentration of 1.2 × 10<sup>14</sup> cm<sup>–2</sup> and an enhanced mobility of 192 cm<sup>2</sup>/(V s) is confined at the heterostructure interface. The self-consistent Poisson–Schrödinger calculations indicate that the enhanced interfacial conductivity is a result of the combination of polarization manipulation and band discontinuity, well-supported by the characteristics of piezoelectric force microscopy and depth-profiled XPS. Integrating κ-Ga<sub>2</sub>O<sub>3</sub> on other hexagonal polar semiconductors may open a possibility to manipulate the interfacial conductivity through polarization engineering and deliver advanced devices with multiple functionalities.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00947?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00947</a>.(Figure S1) AFM images (5 × 5 μm) of In<sub>2</sub>O<sub>3</sub> single layer (a) and Sn-doped κ-Ga<sub>2</sub>O<sub>3</sub>/In<sub>2</sub>O<sub>3</sub> double layer (b) grown on the YSZ substrate, (Figure S2) (a) optical transmittance spectra of κ-Ga<sub>2</sub>O<sub>3</sub> films and (b) derived Tauc plot, (Figure S3) Sn 3d core level spectra of Sn-doped κ-Ga<sub>2</sub>O<sub>3</sub> in bulk region (a) and surface region (b), (Figure S4) O 1s XPS profiles at the κ-Ga<sub>2</sub>O<sub>3</sub>/In<sub>2</sub>O<sub>3</sub> interface, and (Figure S5) simulated band structure (a) and electron concentration (b) profiles of the κ-Ga<sub>2</sub>O<sub>3</sub>/In<sub>2</sub>O<sub>3</sub> heterojunction without polarization (inset: the enlarged band structure and electron concentration of the κ-Ga<sub>2</sub>O<sub>3</sub>/In<sub>2</sub>O<sub>3</sub> interface) (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00947/suppl_file/el0c00947_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic