Abstract:Realizing switchable n-type and p-type conduction in bismuth selenide (Bi2Se3), a traditional thermoelectric material and a topological insulator, is highly beneficial for the development of thermoelectric devices and also of great interest for spintronics and quantum computing. In this work, switching between n-type and p-type conduction in single Bi2Se3 nanoribbons is achieved by a reversible copper (Cu) intercalation method. Density functional theory calculations reveal that such a switchable behavior arises from the electronic band structure distortion caused by the high-concentration Cu intercalation and the Cu substitution for Bi sites in the host lattice. A proof-of-concept in-plane thermoelectric generator is fabricated with one pair of the pristine n-type and intercalated p-type Bi2Se3 nanoribbons on a microfabricated device, which gives rise to an open-circuit voltage of 4.8 mV and a maximum output power of 0.3 nW under a temperature difference of 29.2 K. This work demonstrates switchable n-type and p-type electrical conduction in Bi2Se3 nanoribbons via a facile chemical approach and the practical application of nanoribbons in a thermoelectric device.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c08685?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c08685</a>.TEM and HRTEM images of a Bi2Se3 nanoribbon, SEM image of the microdevice for thermoelectric properties characterization, Cu intercalation and deintercalation processes, SEM images, EDS spectra, and thermoelectric properties of the measured samples, Seebeck coefficients of additional samples, DFT calculation results for systems I, II, and III (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c08685/suppl_file/nn0c08685_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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