Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Theoretical Insights into the Thermoelectric Transport Performance of the MoP2Ga2S2 Monolayer.

Theoretical insights into the thermoelectric transport performance of the MoP 2 Ga 2 S 2 monolayer

High Thermoelectric Performance of a Sc2Si2Te6 Monolayer at Medium Temperatures: an Ab Initio Study.

Intrinsic Electronic Transport And Thermoelectric Power Factor In N-Type Doped Monolayer Mos2

Thermal Transport in MoS_2 from Molecular Dynamics Using Different Empirical Potentials

Ab-initio transport model to study the thermoelectric performance of MoS2, MoSe2, and WS2 monolayers by using Boltzmann Transport Equation

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

A Revisit to High Thermoelectric Performance of Single-layer MoS2

High Thermoelectric Performance of Sb2Si2Te6 Monolayers

High Thermoelectric Powerfactor in Single and Few-Layer MoS$_2$

Theoretical investigations of Janus WSeTe monolayer and related van der Waals heterostructures with promising thermoelectric performance

Synergistic modulation of electrical and thermal transport toward promising n-type MgOCuSbSe2 thermoelectric performance by MO-intercalated CuSbSe2

High Thermoelectric Powerfactor in Single and Few-Layer MoS_2

Potential thermoelectric candidate monolayer silicon diphosphide (SiP2) from a first-principles calculation

Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2

Theoretical Study of Thermoelectric Properties of MoS 2

Enhanced Thermoelectric Performance of Two Dimensional MS2 (M = Mo, W) Through Phase Engineering

Unexpected thermal transport properties of MgSiO 3 monolayer at extreme conditions

XMoSiN2 (X = S, Se, Te): A Novel 2D Janus Semiconductor with Ultra-High Carrier Mobility and Excellent Thermoelectric Performance

Large Thermoelectric Power Factor of High-Mobility Transition-Metal Dichalcogenides with 1T^{″} Phase

Comparative analysis of thermoelectric properties in bulk 2H and monolayer MoS2: afirst-principles study at high temperatures