Abstract:The role of oxygen vacancies and interfacial strain on the metal-insulator transition (MIT) behavior of high-quality VO2 nanobeams (NBs) synthesized on SiO2/Si substrates employing V2O5 as a precursor has been investigated in this research. Selective oxygen vacancies have been generated by argon plasma irradiation. The MIT is progressively suppressed as the duration of plasma processing increases; in addition, the temperature of MIT (T-MIT) drops by up to 95 K relative to the pristine VO2 NBs. Incorporating oxygen vacancies into VO2 may increase its electron concentration, which might shift the Fermi levels upward, strengthen the electronic orbital overlap of the V-V chains, and further stabilize the metallic phase at lower temperatures, based on first-principles calculations. Furthermore, in order to evaluate the influence of substrate-induced strain in our situation, the MIT in two distinct types of VO2 NB samples is examined without metal contacts by using the distinctive light scattering characteristics of the metal (M) and insulator (I) phases (i.e., M/I domains) by optical microscopy. It is found that the domain structures in the "clamped" NBs persisted up to similar to 453 K, while the "released" NBs (transferred to a new substrate) did not exhibit any domain structures and turned into an entirely M phase with a dark contrast above similar to 348 K. When combined with first-principles calculations, the electronic orbital occupancy in the rutile phase contributes to explaining the interfacial strain-induced modulation of MIT. The current findings shed light on how interfacial strain and oxygen vacancies impact MIT behavior. It also suggests several types of control strategies for MIT in VO2 NBs, which are essential for a broader spectrum of VO2 NB applications.

Proliferation of metallic domains caused by inhomogeneous heating near the electrically-driven transition in VO$_2$ nanobeams

Direct observation of nanoscale Peltier and Joule effects at metal-insulator domain walls in vanadium dioxide nanobeams.

Metal-insulator transition in vanadium dioxide nanobeams: probing sub-domain properties of strongly correlated materials

Effects of Oxygen Vacancies and Interfacial Strain on the Metal-Insulator Transition of VO2 Nanobeams.

Dynamically Tracking the Joule Heating Effect on the Voltage Induced Metal-Insulator Transition in VO2 Crystal Film

Direct visualization of percolating metal-insulator transition in V 2 O 3 using scanning microwave impedance microscopy

Nanoscale Phase Separation and Lattice Complexity in VO2: the Metal–Insulator Transition Investigated by XANES Via Auger Electron Yield at the Vanadium L23-Edge and Resonant Photoemission

Kinetically Decoupled Electrical and Structural Phase Transitions in VO2

Nanotextured Dynamics of a Light-Induced Phase Transition in VO 2

Mesoscopic Effects and Metal-Insulator Transition in Vanadium Oxide Nanowires

Subcycle insulator-to-metal transition in vanadium dioxide by terahertz-field-driven tunneling

Switching VO2 Single Crystals and Related Phenomena: Sliding Domains and Crack Formation

New aspects of the metal–insulator transition in single-domain vanadium dioxide nanobeams

Role Of Joule Heating Effect And Bulk-Surface Phases In Voltage-Driven Metal-Insulator Transition In Vo2 Crystal

Optically Monitored Electric-Field-Induced Phase Transition in Vanadium Dioxide Crystal Film

Comprehensive Study of the Metal-Insulator Transition in Pulsed Laser Deposited Epitaxial VO2 Thin Films

Field-effect Modulation of Conductance in VO2 Nanobeam Transistors with HfO2 As the Gate Dielectric

Investigation on Electrically-Driven Semiconductor-Metal Transition of Polycrystalline VO2 Thin Films on Two Kinds of Substrates

Effect of heat treatment on the current induced dynamic mixed metal-insulator phase in needle-like VO2 single crystals

Structural Transition and Temperature-Driven Conductivity Switching of Single Crystalline VO2(A) Nanowires

Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide