Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V$_2$O$_3$
Maximilian Thees,Min-Han Lee,Rosa Luca Bouwmeester,Pedro H. Rezende-Gonçalves,Emma David,Alexandre Zimmers,Emmanouil Frantzeskakis,Nicolas M. Vargas,Yoav Kalcheim,Patrick Le Fèvre,Koji Horiba,Hiroshi Kumigashira,Silke Biermann,Juan Trastoy,Marcelo J. Rozenberg,Ivan K. Schuller,Andrés F. Santander-Syro
DOI: https://doi.org/10.1126/sciadv.abj1164
2022-07-09
Abstract:In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V$_2$O$_3$ the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level.
Strongly Correlated Electrons,Materials Science