Direct visualization of percolating metal-insulator transition in V 2 O 3 using scanning microwave impedance microscopy

Weiyan Lin,Huanyu Zhang,Yoav Kalcheim,Xinchen Zhou,Fubao Yang,Yang Shi,Yang Feng,Yihua Wang,Jiping Huang,Ivan K. Schuller,Xiaodong Zhou,Jian Shen
DOI: https://doi.org/10.1007/s11433-022-1932-9
2022-01-01
Abstract:Using the extensively studied V 2 O 3 as a prototype system, we investigate the role of percolation in metal-insulator transition (MIT). We apply scanning microwave impedance microscopy to directly determine the metallic phase fraction p and relate it to the macroscopic conductance G , which shows a sudden jump when p reaches the percolation threshold. Interestingly, the conductance G exhibits a hysteretic behavior against suggesting two different percolating processes upon cooling and warming. Based on our image analysis and model simulation, we ascribe such hysteretic behavior to different domain nucleation and growth processes between cooling and warming, which is likely caused by the decoupled structural and electronic transitions in V 2 O 3 during MIT. Our work provides a microscopic view of how the interplay of structural and electronic degrees of freedom affects MIT in strongly correlated systems.
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