Abstract:After the discovery of GMR by Fert and Grünberg, electronics had a breakthrough with the birth of a new branch called spintronics. This discipline, while still young, exploits the spin of electrons. Most quantum devices exploiting this property of electrons consists of alternating magnetic and nonmagnetic thin layers on a semiconductor substrate. One of the best tools used for characterizing these structures is the so-called Ballistic Electron Emission Microscope (BEEM). Originally, it was dedicated to the imaging of buried objects and to the study of the potential barrier formed at the interface of a metal and a semiconductor. With the development of spintronics, the BEEM became an essential spectroscopy technique but still fundamentally misunderstood. The first realistic model, based on the non-equilibrium Keldysh formalism, was proposed to describe the transport of electrons during BEEM experiments. However, despite its success, its use was limited to the study of semi-infinite structures through a calculation method called decimation of Green functions. In this context, we have extended this model to the case of thin films and hetero-structures like spinvalves: starting from the same postulate that electrons follow the band structure of materials in which they propagate, we have established an iterative formula allowing calculation of the Green functions of the finite system by tight-binding method and encoded it in a F90 code. In parallel, we have developed a simpler method which allows to avoid passing through the non-equilibrium Keldysh formalism. Despite its simplicity, we have shown that this intuitive approach gives some physical interpretation qualitatively similar to the non-equilibrium approach. However, for a more detailed study, the use of "non-equilibrium approach" is inevitable, especially for the detection of thickness effects linked to layer interfaces.

Modeling of Ballistic Electron Emission Microscopy on metal thin films

Modification of a Scanning Tunneling Microscope for Measurement of Ballistic Electron Emission Microscopy

Electron injection model for linear and parabolic 2D materials: Full quantum time-dependent simulation of graphene devices.

Phase-Field-Crystal Model for Electromigration in Metal Interconnects.

Non-Equilibrium Green Functions in Electronic Device Modeling

A novel quantum dynamical approach in electron microscopy combining wave-packet propagation with Bohmian trajectories

Electronic Impurity Scattering Induced Spin Accumulation in Metallic Thin Films

Inverse Modeling of Heterogeneous Structures in Electron Probe Microanalysis

Spatio-Temporal Electron Propagation Dynamics in Au/Fe/MgO(001) in nonequilibrium: Revealing Single Scattering Events and the Ballistic Limit

Ballistic vs. diffusive transport in metals

Multiscale approach for modeling magnetization properties of inhomogeneous ultrathin magnetic layers

Modelling of Spintronic Terahertz Emitters as a function of spin generation and diffusion geometry

Quantum theory of electronic excitation and sputtering by transmission electron microscopy

Scattering-Matrix Method For Ballistic Electron-Transport - Theory And An Application To Quantum Antidot Arrays

Microscopic Modelling for EMAT in Ferromagnetic Materials

Thermoballistic spin-polarized electron transport in paramagnetic semiconductors

Ballistic electron transport in lateral antidot arrays investigated by scattering-matrix method

Bohmian Trajectory-Bloch Wave Approach to Dynamical Simulation of Electron Diffraction in Crystal

Ballistic Electron Microscopy of a Metal Molecule Interface

Crystallographic dependence of Field Evaporation Energy Barrier in metals using Field Evaporation Energy Loss Spectroscopy mapping

Monte Carlo Modeling of Secondary Electron Emission and Its Incorporation in Particle Simulations of Electron-Surface Interaction