Abstract:With the aim to enhance the phase shift range and bandwidth of the novel Inverted-E topology for single-bit and multi-bit phase shifters, this work proposes a new structure, wherein the Main Transmission Line (MTL) in the Inverted-E topology is replaced by a tunable transmission line with a fixed open circuited stub loaded at its center point. Therefore, offering four design freedoms, precisely the characteristic impedances and electrical lengths of the transmission line and the fixed open circuited stub, that provides it the flexibility to achieve much smaller susceptance values for large phase shifts up to 180°. The required susceptances are realized using three symmetric open or short-circuited stubs, which are loaded to the tunable transmission line using switching p-i-n diodes. The fixed open circuited stubs ensure excellent circuit matching to the port impedance of in the OFF-state, without the need of any additional matching network. Whereas, the enhanced design flexibility enables the realization of compact dimensions and lower insertion loss. A systematic design procedure is developed, supported by detailed design theory and mathematical formulations, followed by validation through analysis and simulations of typical 22.5°, 45°, 90° and 180° digital phase shifters. For experimental verifications, 90° and 180° designs are manufactured at center frequency of 2.4 GHz and a good agreement is observed with theory and simulations. The results indicate compact dimensions of and , corresponding insertion losses of 1.7 dB and 2.85 dB with phase error less than 1° at center frequency. Moreover, the phase variation is observed to be 2° and 5°, in bandwidths of 400 MHz and 100 MHz respectively.

A Low-Loss Passive $D$-Band Phase Shifter for Calibration-Free, Precise Phase Control

An E-band Subradix Active Phase Shifter with < 0.69° RMS Phase Error and 16-Db Attenuation in 28-Nm CMOS

A Wideband 6-Bit Phase Shifter with Low RMS Error in 65nm CMOS Technology

An Ultra Broadband Passive Vector Modulator Phase Shifter

29-/35 GHz Dual-band High-Gain Phase Shifter with Hybrid -Networks

A Calibration Scheme for 24–28-Ghz Variable-Gain Phase Shifter in 65-Nm CMOS

A 51.5 - 64.5 GHz Active Phase Shifter Using Linear Phase Control Technique with 1.4° Phase Resolution in 65-Nm CMOS

A 360$^{\circ}$ Low Phase Error Tunable Phase Shifter With High-Pass and Low-Pass Networks Based on SISL

A 32-40 GHz 7-bit Bi-Directional Phase Shifter With 0.36 dB/1.6 RMS Magnitude/Phase Errors for Phased Array Systems

A 6-Bit Phase Shifter with Low RMS Phase Error and Flat Gain Across 1.9–2.6Ghz

A 27–31 ghz 6-Bit Phase Shifter with Low Phase Error/gain Variation in 65 nm CMOS

High-Resolution Wideband Vector-Sum Digital Phase Shifter with On-Chip Phase Linearity Enhancement Technology

A 28ghz Rf Phase Shifter With High Phase Resolution In 180-Nm Cmos Technology

A 44-52 GHz Reflection-type Phase Shifter with 1.4° Phase Resolution in 28nm CMOS Process

A Broadband Tunable Multilayer Substrate Integrated Waveguide Phase Shifter

A 32-40 GHz 7-Bit CMOS Phase Shifter with 0.38db/1.6° RMS Magnitude/Phase Errors for Phased Array Systems

Theoretical Analysis and Design of a Compact Analogue Phase Shifter with Constant Low Insertion Loss

A W-Band 6-Bit Phase Shifter With 7 dB Gain and 1.35° RMS Phase Error in 130 nm SiGe BiCMOS

A COMPACT PHASE SHIFTER WITH WIDE PHASE RANGE USING LOADED TRANSMISSION LINE

Inverted-E Type Phase Shifter Using Fixed Stub-Loaded Main Line: Enhanced Bandwidth and Phase Shift Range

Wideband Multibit Phase Shifter Based on SCRLH-TL