Ballistic quantum transport in L-shaped Vertical Halo-Implanted p+-GaSb/InAs n-TFETs

Bhupesh Bishnoi,BahnimanGhosh
DOI: https://doi.org/10.48550/arXiv.1408.5469
2014-08-23
Abstract:In the present work, we have investigated ballistic quantum transport in vertical halo implanted p plus minus GaSb InAs n TFETs. We have investigated the current voltage characteristics, ON current, OFF current leakage, subthreshold swing variation as function of gate length, drain length, gate undercut, equivalent oxide thickness, High K and drain thickness. The electrostatic control, I V performances and optimization of device structure are carried out for novel L shaped nonlinear geometry n TFETs. In the n TFETs device p plus minus GaSb InAs heterostructure gives rise to type III broken gap band alignment. In this geometry the gate electric field and tunnel junction internal field are oriented in same direction and assist the Band to Band tunnelling process. To study the ballistic quantum transport in this L shaped nonlinear geometry we used 3 D, full-band atomistic sp3d5s spin orbital coupled tight binding method based quantum mechanical simulator which works on the basis of Non Equilibrium Green Function formalism to solve coupled Poisson Schr "odinger equation self consistently for potentials and Local Density of state.
Materials Science,Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to optimize the electrical performance of vertical Halo - implanted p+ - GaSb/InAs n - TFETs (tunneling field - effect transistors) by studying the ballistic quantum transport characteristics and evaluate the influence of different geometric parameters on the device performance. Specifically, the paper mainly focuses on the following aspects: 1. **Current - Voltage Characteristics**: Study the current - voltage (I - V) characteristics of the device, especially the variation of the on - current, off - current leakage and subthreshold swing with the gate length, drain length, under - cut of the gate, equivalent oxide thickness, high - dielectric - constant material and drain thickness. 2. **Electrostatic Control and Structure Optimization**: Optimize the electrostatic control and I - V performance of n - TFETs with L - shaped non - linear geometric structures to ensure high - performance operation of the device at low voltages. 3. **Material and Structure Characteristics**: Analyze the type - III broken gap band alignment caused by the p+ - GaSb/InAs heterojunction and how this alignment assists the band - to - band tunneling (BTBT) process. 4. **Simulation Method**: Use the 3D full - band atomic - level tight - binding method (sp3d5s∗spin - orbital coupled tight - binding method) based on the Non - Equilibrium Green Function (NEGF) formalism to solve the self - consistent Poisson - Schrödinger equations to study the ballistic quantum transport characteristics. ### Formula Representation Some key formulas involved in the paper are as follows: - **Subthreshold Swing (SS)**: \[ SS=\frac{\Delta V_{GS}}{\log_{10}\left(\frac{I_{DS}}{I_{DS,ref}}\right)} \] where \(V_{GS}\) is the gate - source voltage, \(I_{DS}\) is the drain - source current, and \(I_{DS,ref}\) is the reference current. - **Band - to - Band Tunneling Probability (BTBT)**: \[ P_{BTBT}\propto\exp\left(-\frac{E_g}{k_BT}\right) \] where \(E_g\) is the band - gap energy, \(k_B\) is the Boltzmann constant, and \(T\) is the temperature. ### Summary This paper aims to optimize the performance of vertical Halo - implanted p+ - GaSb/InAs n - TFETs through detailed simulations and experimental studies, especially their working characteristics at low voltages, and provide design guidance for future low - power nanoelectronic circuits.