Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

Logic-Memory Device of a Mechanical Resonator

Reprogrammable Microelectromechanical Membrane Resonator for Logic Computation

Light-Gated Memristor with Integrated Logic and Memory Functions.

Realization of Nonvolatile Multistate Memory and All 16 Boolean Logic Functions in a Single Self-Biased Magnetoimpedance Device

Easily Cascaded Memristor-CMOS Hybrid Circuit for High-Efficiency Boolean Logic Implementation

A mechanical metamaterial with reprogrammable logical functions

Boolean Logic Gates From A Single Memristor Via Low-Level Sequential Logic

Nanofluidic logic with mechano-ionic memristive switches

Cascadable microelectromechanical resonator logic gate

Acoustically driven single-frequency mechanical logic

Nanofluidic logic with mechano–ionic memristive switches

Stateful Logic Operations Implemented with Graphite Resistive Switching Memory

Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2<…

Long-Time Memory and Ternary Logic Gate Using a Multistable Cavity Magnonic System

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Implication Logic Circuit Based on a Graphene Oxide Complementary Resistive Switching Device

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic

Logical stochastic resonance induced by electromagnetic fluctuation in the memristive FitzHugh–Nagumo Neuron

Logic-in-memory based on an atomically thin semiconductor

Memory Devices: an Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire Via Local Gating (adv. Electron. Mater. 6/2019)

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory