Abstract:The current through a carbon nanotube field-effect transistor (CNFET) with cylindrical gate electrode is calculated using the nonequilibrium Greens function method in a tight-binding approximation. The obtained result is in good agreement with the experimental data. The space radiation and nuclear radiation are known to cause defects in solids. The theoretical approach is used to calculate the amplitude of the random-telegraph-signal (RTS) noise due to a single defect in the gate oxide of a long channel p-type CNFET. We investigate how the amplitude of the RTS noise is affected by the composite structure of gate insulators, which contains an inner insulator with a dielectric constant larger than 3.9 and an outer insulator with a dielectric constant of 3.9 (as for SiO2). It is found that the RTS amplitude increases apparently with the decreasing thickness of the inner gate insulator. If the inner insulator is too thin, even though its dielectric constant is as large as 80, the amplitude of the RTS noise caused by the charge of Q = +1e may amount to around 80% in the turn-on region. Due to strong effects of defects in CNFETs, CNFETs have a potential to be used for detecting the space radiation or nuclear radiation.
What problem does this paper attempt to address?
This paper attempts to solve the problem of random telegraph signal (RTS) noise in carbon nanotube field - effect transistors (CNFETs) caused by a single defect in the gate oxide. Specifically, the main research objectives include:
1. **Understanding the influence of defects on CNFET performance**: Space radiation and nuclear radiation are known to introduce defects in solid materials, and these defects can affect the performance of CNFETs, especially generating significant RTS noise. Therefore, researchers hope to understand how these defects affect device performance and find ways to reduce this influence.
2. **Optimizing the composite gate insulator structure to reduce noise**: By studying composite gate insulators composed of inner and outer insulating layers (such as SiO₂) with different thicknesses and dielectric constants, researchers attempt to find the best combination of structural parameters to minimize the RTS noise amplitude caused by a single defect. In particular, it has been found that when the inner insulating layer is very thin, even if its dielectric constant is very high (for example, 80), the RTS noise amplitude caused by + 1e charge in the on - region can still be as high as 80%. Conversely, if the inner insulating layer is much thicker than the outer insulating layer, the RTS noise can be significantly reduced.
3. **Exploring the application potential of CNFETs in radiation detection**: Since defects have a significant impact on CNFET performance, this makes it possible for CNFETs to be used to detect space radiation or nuclear radiation. Therefore, the research also explores the potential applications of CNFETs in the field of radiation detection.
### Formula Summary
- **Current calculation formula**:
\[
I=\frac{2e}{h}\int dE T(E)\left[n_F(E - \mu_S)-n_F(E - \mu_D)\right]
\]
where \(T(E)\) is the transfer function between the source and the drain, defined as:
\[
T(E)=\text{tr}\left(\Gamma_S(E)G^r(E)\Gamma_D(E)G^a(E)\right)
\]
\(\Gamma_{S,D}(E)=i\left[\Sigma^r_{S,D}(E)-\Sigma^a_{S,D}(E)\right]\)
- **Definition of RTS noise amplitude**:
\[
A_{\text{RTS}}=\frac{I_0 - I_Q}{I_0}
\]
where \(I_0\) is the current in the absence of defects, and \(I_Q\) is the current in the presence of a + 1e charge defect.
### Conclusion
Through the study of the composite gate insulator structure, the paper reveals the influence of the thickness and dielectric constant of the inner and outer insulating layers on the RTS noise amplitude. The research results show that a reasonable insulating layer design can effectively reduce RTS noise, thereby improving the performance and reliability of CNFETs. In addition, the potential application of CNFETs in radiation detection has also been explored.