Abstract:A triboelectric potential powered vertical field‐effect transistor (tribotronic vertical field‐effect transistor or graphene barristor) is demonstrated, offering an effective way to modulate the Schottky barrier of vertical van der Waals heterostructure by mechanical displacement. Graphene has attracted considerable interest for next‐generation electronics. However, the absence of natural bandgap has limited the current on/off ratio of graphene‐based transistors. Vertical integration of 2D heterostructures offers a promising approach to address this challenge, enabling high‐current‐density vertical field‐effect transistor (VFET) with large on/off ratio. Here, a triboelectric potential‐powered VFET with a vertical stacked graphene/MoS2 heterostructure and a sliding‐mode triboelectric nanogenerator (TENG) coupled with gate dielectrics are proposed. The tribotronic VFET has an ultrashort channel length in vertical direction, exhibiting excellent current driving capability with an ultrahigh on‐state current density of 950 A cm−2 and a good current on/off ratio of 630. It also demonstrates reconfigurable diode behavior with a rectification ratio over 102. Temperature‐dependent studies are applied to tribotronic devices for the first time, indicating an effective modulation on the Schottky barrier height of 150 meV by the triboelectric potential. A green LED pixel is driven by the tribotronic VFET as a demonstration to work as a tactile interactive light‐emitting device. The demonstrated tribotronic vertical device offers a promising strategy for integrating various 2D layered materials with TENG in vertical direction, enabling 3D integration of low‐power and interactive devices for next‐generation electronics.

Thin film barristor: a gate tunable vertical graphene-pentacene device

Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristor

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors

Ambipolar Barristors for Reconfigurable Logic Circuits

Theoretical Demonstration of the Ionic Barristor

Maximizing Schottky barrier modulation in graphene-WSe 2 /MoSe 2 heterojunction barristor through Dirac-cone induced phenomenon

Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

Tribotronic Vertical Field‐Effect Transistor Based on van der Waals Heterostructures

An All-Carbon Vdw Heterojunction Composed of Penta-Graphene and Graphene: Tuning the Schottky Barrier by Electrostatic Gating or Nitrogen Doping

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Flexible graphene field effect transistor with ferroelectric polymer gate

Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor

Compact Modeling of Graphene Barristor for Digital Integrated Circuit Design

A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation

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Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics