Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate

Dominik Bischoff,Tobias Krähenmann,Susanne Dröscher,Michelle A. Gruner,Clément Barraud,Thomas Ihn,Klaus Ensslin

DOI: https://doi.org/10.1063/1.4765345

2013-02-05

Abstract:We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility and lower disorder density compared to devices fabricated on silicon dioxide substrate in agreement with previous findings. The transport characteristics of the reactive-ion-etched graphene nanoribbons on hexagonal boron nitride, however, appear to be very similar to those of ribbons on a silicon dioxide substrate. We perform a detailed study in order to highlight both similarities as well as differences. Our findings suggest that the edges have an important influence on transport in reactive ion-etched graphene nanodevices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to study whether the electrical transport properties of reactive - ion - etched graphene nanoribbons (GNRs) prepared on a hexagonal boron nitride (hBN) substrate are significantly different from those of similar structures on a silicon dioxide (SiO₂) substrate. Specifically, the author hopes to understand:

1. **The influence of substrate materials on electrical transport properties**: By transferring graphene nanoribbons from the traditional SiO₂ substrate to a higher - quality hBN substrate, study whether this change can significantly improve the electrical properties of the nanoribbons.

2. **The influence of edge effects**: Explore whether the rough edges formed during the reactive - ion - etching process have an important impact on the electrical transport properties of graphene nanoribbons.

3. **The role of microscopic defects**: Analyze the charge - carrier localization phenomenon in graphene nanoribbons due to bulk or edge disorder, and evaluate how these microscopic defects limit the repeatability and controllability of the device.

### Main findings

- **Improvement of micron - scale devices**: The experimental results show that micron - scale graphene devices on the hBN substrate have higher mobility and lower disorder density, which is consistent with previous literature reports.

- **Similarity of nanoribbon electrical transport properties**: Although the substrate materials are different, the electrical transport properties of reactive - ion - etched graphene nanoribbons on the hBN substrate are very similar to those on the SiO₂ substrate, indicating that a simple substrate replacement cannot significantly improve the electrical properties of the nanoribbons.

- **The importance of edge effects**: The author concludes that edge effects play an important role in electron transport in graphene nanoribbons, probably due to the rough edges introduced during the reactive - ion - etching process.

### Conclusion

This study shows that although the hBN substrate can significantly improve the electrical properties of micron - scale graphene devices, for reactive - ion - etched graphene nanoribbons, their electrical transport properties are still strongly influenced by edge roughness and other microscopic defects. Therefore, future research can focus on how to improve edge quality or regulate the properties of graphene nanoribbons by other methods (such as atomic - level control or functionalization).