Abstract:Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene1,2,3,4,5,6,7,8,9,10,11,12. Although suspending the graphene above the substrate leads to a substantial improvement in device quality13,14, this geometry imposes severe limitations on device architecture and functionality. There is a growing need, therefore, to identify dielectrics that allow a substrate-supported geometry while retaining the quality achieved with a suspended sample. Hexagonal boron nitride (h-BN) is an appealing substrate, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps. It also has a lattice constant similar to that of graphite, and has large optical phonon modes and a large electrical bandgap. Here we report the fabrication and characterization of high-quality exfoliated mono- and bilayer graphene devices on single-crystal h-BN substrates, by using a mechanical transfer process. Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO2. These devices also show reduced roughness, intrinsic doping and chemical reactivity. The ability to assemble crystalline layered materials in a controlled way permits the fabrication of graphene devices on other promising dielectrics15 and allows for the realization of more complex graphene heterostructures. Graphene devices supported on single-crystal hexagonal boron nitride substrates show an enhanced mobility and carrier homogeneity, as well as reduced roughness, intrinsic doping and chemical reactivity, compared with traditional SiO2 substrates.

Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate

Graphene Nanoribbons on Hexagonal Boron Nitride: Deposition and Transport Characterization

Direct Growth of Graphene Nanoribbons for Large-Scale Device Fabrication

Graphene Nanoribbons Grown in Hbn Stacks for High-Performance Electronics

Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches

Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask

Boron Nitride Substrates for High-Quality Graphene Electronics.

Scalable templated growth of graphene nanoribbons on SiC

Scalable and Direct Growth of Graphene Micro Ribbons on Dielectric Substrates

Large-Scale Production Of Graphene Nanoribbons From Electrospun Polymers

Embedded Boron Nitride Domains In Graphene Nanoribbons For Transport Gap Engineering

Variable Electrical Responses in Epitaxial Graphene Nanoribbons

Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Theoretical insight into the intrinsic electronic transport properties of graphene–biphenylene–graphene nanosheets and nanoribbons: a first-principles study

On-surface synthesis and edge states of NBN-doped zigzag graphene nanoribbons

Substrate Engineering-Tailored Fabrication of Aligned Graphene Nanoribbon Arrays: Implications for Graphene Electronic Devices

Electronic Properties Of Graphene Nanoribbons Stacked On Boron Nitride Nanoribbons

Graphene nanoribbons: relevance of etching process

Narrow Graphene Nanoribbons from Carbon Nanotubes

Direct Visualization of Atomically Precise Nitrogen-Doped Graphene Nanoribbons