Graphene Nanoribbons on Hexagonal Boron Nitride: Deposition and Transport Characterization

Tobias Preis,Christian Kick,Andreas Lex,Akimitsu Narita,Yunbin Hu,Kenji Watanabe,Takashi Taniguchi,Klaus Müllen,Dieter Weiss,Jonathan Eroms

DOI: https://doi.org/10.1063/1.5065568

2019-05-02

Abstract:Chemically synthesized "cove"-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO2 chip. With AFM we observed that the cGNRs form ordered domains aligned along the crystallographic axes of the hBN. Using electron beam lithography and metallization, we contacted the cGNRs with NiCr/Au, or Pd contacts and measured their I-V-characteristics. The transport through the ribbons was dominated by the Schottky behavior of the contacts between the metal and the ribbon.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

### Problems the paper attempts to solve

This paper aims to solve how to deposit chemically - synthesized "bay - type" graphene nanoribbons (cGNRs) on hexagonal boron nitride (hBN) and study their transport properties. Specifically, the paper mainly focuses on the following aspects:

1. **Improving the deposition method**: Traditional graphene nanoribbon (GNRs) preparation methods (such as top - down etching and dissociating carbon nanotubes) have the problem of rough edges, which limits their applications in devices. This paper proposes a new deposition method, that is, directly dispersing and drop - casting solution - processable cGNRs onto the hBN substrate.

2. **Enhancing transport performance**: The transport performance of graphene nanoribbons on the SiO₂ substrate is negatively affected by the rough surface and charge impurities. In contrast, hBN, as a flatter and electrically neutral substrate, can significantly improve the mobility of graphene. Therefore, the researchers hope to improve the transport properties of cGNRs by depositing them on hBN.

3. **Understanding contact behavior**: Through electron - beam lithography and metallization processes, the researchers contacted cGNRs with metal electrodes (such as NiCr/Au or Pd) and measured their I - V characteristics. They found that the transport properties are mainly controlled by the Schottky barrier, which is crucial for designing high - performance GNR - based field - effect transistors (FETs).

4. **Verifying self - assembly behavior**: The researchers observed that cGNRs formed orderly arranged domain regions on the hBN surface, and these domain regions are arranged along the crystallographic axes of hBN. This self - assembly behavior not only helps to understand the adsorption mechanism of GNRs on two - dimensional materials but also provides a basis for manufacturing high - quality GNR devices in the future.

5. **Exploring stability**: The researchers also studied the stability of the fabricated devices in air and found that after two weeks, the current of the devices decreased, which may be due to the degradation of cGNRs, the degradation of electrodes, or the contamination of particulate matter in the air.

In summary, this paper is committed to developing an efficient and stable GNR deposition method and experimentally verifying its transport properties and self - assembly behavior on the hBN substrate, providing theoretical and experimental bases for future semiconductor technology applications.