Graphene nanoribbons: relevance of etching process

Pauline Simonet,Dominik Bischoff,Annina Moser,Thomas Ihn,Klaus Ensslin

DOI: https://doi.org/10.1063/1.4921104

2015-07-10

Abstract:Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely oxygen plasma ashing and oxygen/argon reactive ion etching (RIE). Oxygen plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: the influence of different etching processes on the electronic and structural properties of graphene nanoribbons (GNRs). Specifically, the authors focus on two commonly - used etching techniques - O₂ plasma ashing and O₂ + Ar reactive ion etching (RIE), and explore how they affect the transport properties of graphene nanoribbons.

### Main problems:
1. **Choice of etching process**: Different etching processes will introduce different types and degrees of defects, which will affect the electronic and structural properties of graphene nanoribbons.
2. **Differences in transport properties**: By comparing the graphene nanoribbons prepared by these two etching techniques, study the differences in their transport characteristics, especially the influence of edge defects on transport properties.
3. **Understanding the source of defects**: Determine the types of defects generated during the etching process and their distribution in the nanoribbons, providing a theoretical basis for optimizing the etching process.

### Specific research contents:
- **Materials and methods**: Use electron - beam lithography to process graphene sheets into nanoribbons, and treat them with O₂ plasma ashing and O₂ + Ar reactive ion etching respectively.
- **Characterization means**: Characterize the structural and electronic properties of graphene nanoribbons under two different etching processes by atomic force microscopy (AFM), Raman spectroscopy and electrical transport measurement.
- **Result analysis**:
- O₂ plasma ashing causes more structural defects, especially in the edge area, which makes the transport properties of the nanoribbons unstable.
- Although reactive ion etching will also introduce some defects, compared with the ashing process, it has fewer defects and is more controllable, and the transport properties are more stable.

### Conclusion:
This study shows that although O₂ plasma ashing can reduce substrate damage, it is easy to produce electrically insulating regions and residual carbon spots in short - time etching, resulting in more local states and transport instability. In contrast, reactive ion etching is more suitable for preparing high - quality graphene nanoribbons for transport measurement.

Through this study, the authors emphasize the importance of choosing the appropriate processing technology for obtaining graphene devices with good electronic properties.