Abstract:We investigated the excitation intensity (Φ) dependent photoluminescence (PL), at room temperature (RT), from GaN-based metal-insulator-semiconductor structures under gate bias (VG) from accumulation to deep depletion resulting in variations of the space charge region width. We found that depending on VG, different Φ-dependencies of the YL band energy position (blueshift or redshift), shape (band enlargement or narrowing) and intensity (signal saturation) can be obtained. In order to explain such an unusual YL behavior, we developed a phenomenological PL model, which is based on the solution of the three-dimensional Poisson's equation, current continuity equations and rate equations, and which takes into account the grain structure of GaN layers and the contribution of interface regions into recombination processes. Our model reproduced well the experimental Φ-dependencies of the YL band intensity. It also predicts that YL arises from the donor-acceptor pair (DAP) recombination in very limited areas (width of several nanometers) inside the depletion regions related to grain/grain interfaces and external crystal surfaces. On this basis, we showed that VG-controlled Φ-dependencies of the YL peak position and shape, can be well explained if we assume that YL is due to DAP-type transitions, in which the final state consists of the Coulomb interaction and strong interaction between the dipole moment of ionized DAP and the depletion region electric field. This recombination mechanism can play a significant role at RT, but should be negligible at low temperatures, where one can expect the significant reduction of interface barriers under illumination.

Surface-Assisted Luminescence: the PL Yellow Band and the EL of n-GaN Devices

Mechanism of yellow luminescence in GaN at room temperature

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

The GaN yellow-luminescence-related surface state and its interaction with air

Measurement and analysis of photoluminescence in GaN

Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

First-principle Calculation for Luminescent-Effects of Si and Zn Impurities in GaN

Yellow luminescence and carrier distribution due to polarity-dependent incorporation of carbon impurities in bulk GaN by Na flux

Does an Enhanced Yellow Luminescence Imply a Reduction of Electron Mobility in N-Type GaN?

Giant shifts of photoluminescence bands in GaN

Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk.

First‐Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: the Example of Yellow Luminance by GaN: CN+ON and GaN:CN

Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

Role of Edge Dislocation and Si Impurity in Linking the Blue Luminescence and Yellow Luminescence in N-Type GaN Films

Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN

Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect

Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire

Yellow luminescence band defect related photocurrent instability of GaN p-i-n ultraviolet photodetectors

Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN

Electroluminescence of an N-Zno/P-Gan Heterojunction under Forward and Reverse Biases