Filamentary Extension of the Mem-Con theory of Memristance and its Application to Titanium Dioxide Sol-Gel Memristors

Ella Gale,Ben de Lacy Costello,Andrew Adamatzky

DOI: https://doi.org/10.48550/arXiv.1207.6928

2012-07-30

Abstract:Titanium dioxide sol-gel memristors have two different modes of operation, believed to be dependent on whether there is bulk memristance, i.e. memristance throughout the whole volume or filamentary memristance, i.e. memristance caused by the connection of conducting filaments. The mem-con theory of memristance is based on the drift of oxygen vacancies rather than that of conducting electrons and has been previously used to describe bulk memristance in several devices. Here, the mem-con theory is extended to model memristance caused by small filaments of low resistance titanium dioxide and it compares favorably to experimental results for filamentary memristance in sol-gel devices.

Materials Science,Emerging Technologies,Chemical Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to extend and apply the Mem - Con theory to explain the filamentary memristance in TiO₂ sol - gel memristors and compare it with experimental results.

Specifically, the paper mainly focuses on the following points:

1. **Explanation of two operation modes**:
- TiO₂ sol - gel memristors have two different operation modes: bulk memristance and filamentary memristance. Bulk memristance refers to the resistance change within the entire volume, while filamentary memristance is the resistance change caused by the connection of conductive filaments.

2. **Application of the Mem - Con theory**:
- The Mem - Con theory is based on the drift of oxygen vacancies rather than the drift of conductive electrons. This theory has been previously used to describe the bulk memristance behavior of certain devices. This paper attempts to extend the Mem - Con theory to describe the filamentary memristance behavior formed by small - area, low - resistance barium titanate and verify its consistency with experimental results.

3. **Model establishment**:
- The paper has established a detailed theoretical model, including mathematical descriptions of the internal structure of the memristor, magnetic flux calculation, current density, magnetic field distribution, etc. Through these models, the author can explain the working mechanism of the filamentary memristor and compare it with experimental data.

4. **Comparison between experiment and theory**:
- The author has verified the effectiveness of the extended Mem - Con theory model through experimental data, especially in describing the nonlinear I - V characteristics of the filamentary memristor. The results show that the theoretical model has a good consistency with the experimental data, especially in the "triangular" switching behavior.

### Formula summary

- **Total resistance \( R_{\text{tot}} \)**:
\[
R_{\text{tot}} = R_u+R_{\text{off}}+M + H(w - D)\cdot R_{\text{fil}}
\]
where \( H \) is the Heaviside function, which is 1 when \( w\geq D \) and 0 otherwise.

- **Chua memristance \( M_C \)**:
\[
M_C=\frac{\partial\phi}{\partial q}
\]

- **Memory function \( M \)**:
\[
M = C\cdot M_C
\]
where \( C \) is an experimentally determined constant.

- **High - resistance - state resistance \( R_{\text{off}} \)**:
\[
R_{\text{off}}=\frac{\rho_{\text{off}}}{\pi}\ln\left(\frac{r_1}{r_2}\right)
\]

- **Filamentary resistance \( R_{\text{fil}} \)**:
\[
R_{\text{fil}}\propto r_2^{D_f}
\]
where \( D_f\approx2.54 \).

Through these formulas and models, the author has successfully explained the filamentary memristance behavior in TiO₂ sol - gel memristors and provided a basis for future experimental and theoretical research.