Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Magnetically active vacancy related defects in irradiated GaN layers

Vacancy migrations in carbon nanotubes.

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Tuning Magnetism of Monolayer Gan by Vacancy and Nonmagnetic Chemical Doping

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

Robust magnetic behavior in two-dimensional GaN caused by atomic vacancies

A comparative study on ferromagnetic C/O-implanted GaN films by positron annihilation spectroscopy

Positron Annihilation in (ga, Mn)N: A Study of Vacancy-Type Defects

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Radiation-induced defects in the InGaN/GaN superlattice structure

Fingerprints of carbon defects in vibrational spectra of gallium nitride (GaN) consider-ing the isotope effect

Investigation on gallium nitride with N-vacancy defect nano-grinding by molecular dynamics

Tuning the electronic and optical properties of two-dimensional GaN/AlGaN heterostructure by vacancy defect

First-principles Study of Ga-vacancy Induced Magnetism in Β-Ga2o3

Modification of β-gallium oxide electronic properties by irradiation with high-energy electrons

Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

First-principles study on the magnetism, carrier activity, and carrier lifetime of Ga 2 O 3 : Li or Na or K with different valence Ga vacancies and H interstitial

First-principles study on the effect of point defects on the magnetic new mechanism and optical properties of the GaN:Be/Mg/Ca system

Monovacancy paramagnetism in neutron-irradiated graphite probed by $^{13}$C NMR

Electronic Properties and Passivation Mechanism of AlGaN/GaN Heterojunction with Vacancies: a DFT Study