Abstract:In this paper, the characteristics of oxygen vacancies (VO) and gallium vacancies (VGa) in β-Ga2O3 are studied using density functional theory. The performed relaxation analysis indicates that the relaxation of VGaII increases its octahedral volume. Compared with the tetrahedron, the Ga atom of the octahedron surrounding VO is more stable. The formation energy results suggest also that VGa 0 is expected to be most favorable in p-type β-Ga2O3, while VGa -3 is preferred in the n-type. The −3 charge state acts as a compensating acceptor, which reduces electron conductivity. VO+2, which acts as the compensation donor center, can easily form in p-type β-Ga2O3, while the VO0 forms readily in n-type β-Ga2O3. VGa at high density can exist in β-Ga2O3 in an oxygen-rich environment, while VO can exist under oxygen-poor conditions. The defect charge-state transition level reveals that VGa is a deep acceptor and VO is a deep donor. For VGa, the transition levels ε (0/-1), ε (-2/-1), and ε (-3/-2) can appear in the thermodynamic equilibrium system. However, for VOI and VOIII, which are used as negative-U centers, only the transition level ε (2+/0) can appear in thermodynamic equilibrium. Furthermore, the calculated bandgap properties indicate that VGa is capable of introducing ferromagnetism in β-Ga2O3, while VO cannot. VGa introduces both acceptor levels and donor levels within the bandgap, which compensate each other, and they, thus, determine the acceptor characteristics of the system. The appearance of VO-introduced donor levels into the bandgap increases the overall electron concentration of the system. A Bader charge analysis shows that the vacancy defect can have a strong effect on the charge distribution of the crystal and alter the electronic characteristics of the crystal. The research results in this paper show that the electronic and magnetic properties of β-Ga2O3 can be changed significantly by introducing different types of vacancy defects with different charge states during the preparation process of the device. This can be done to meet specific performance requirements of a commercial electronic component.

First-principles study on the magnetism, carrier activity, and carrier lifetime of Ga 2 O 3 : Li or Na or K with different valence Ga vacancies and H interstitial

Effect of different valence states point defects on carrier activity and lifetime and photocatalytic properties of GaN:Be/Mg/Ca system

First-principles Study of Ga-vacancy Induced Magnetism in Β-Ga2o3

First-principles study of the effects of interstitial H and point vacancies on the photocatalytic performance of Be/Mg/Ca-doped GaN

Electronic Structure and Optical Property of Metal-Doped Ga2o3: A First Principles Study

First-principles study on the effect of point defects on the magnetic new mechanism and optical properties of the GaN:Be/Mg/Ca system

First-Principles Study of the Effects of La2+/3+ Doping and Oxygen Vacancies on TiO2 Magnetism, Carrier Lifetime, Activity, and Absorption Spectra

First-principles study on the effects of Zr doping and interstitial H and O vacancy on the optoelectronic properties of [math]-Ga2O3

First principles investigation of photoelectric properties of Ga 2 O 3 Doped with group IV elements (Si,Ge,Sn)

The effect of vacancy defects on the electronic properties of β-Ga2O3

Advancing Understanding of Structural, Electronic, and Magnetic Properties in 3D-Transition-metal TM-doped Α-Ga2o3 (TM = V, Cr, Mn, and Fe): A First-Principles and Monte Carlo Study

Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure

First‐principles investigation of the influence of point defect on the electronic and optical properties of α‐Ga2O3

Roles of Impurity Levels in 3d Transition Metal-Doped Two-Dimensional Ga2O3

How do the oxygen vacancies affect the photoexcited carriers dynamics in β-Ga2O3?

First-Principles Studies for Electronic Structure and Optical Properties of p-Type Calcium Doped α-Ga2O3

The spontaneous polarization of In-doped κ-Ga2O3 by first-principles calculation

Electronic transport and optical properties of five different phases (α, β, ε , δ and γ) of Ga2O3: A first-principles study

Defect energy levels in monoclinic β-Ga2O3

First‐Principles Calculations of Electronic Structure and Optical Properties of Si‐Doped and Vacancy Β‐ga2o3

Tuning the energy band-gap of crystalline gallium oxide to enhance photocatalytic water splitting: mixed-phase junctions