Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

Breakdown phenomena of Al-based high-k dielectric/SiO2 stack on 4H-SiC

Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al2O3/SiO2 stacked dielectric

Toward the Understanding of Stacked Al-Based High-k Dielectrics for Passivation of 4H-SiC Devices

Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

Saturation Thickness of Stacked SiO2 in Atomic-Layer-deposited Al2O3 Gate on 4H-Sic

Design of field-plate terminated 4H-SiC Schottky diodes using high-k dielectrics

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Interface Properties Study on SiC MOS with High-K Hafnium Silicate Gate Dielectric

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

Interface Properties Study On Sic Mos With High-Kappa Al2o3 Gate Dielectric

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.

Design and Optimization of Planar Mesa Termination for Diamond Schottky Barrier Diodes

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric

Improvement in Leakage Current and Breakdown Field of Cu-Comb Capacitor Using a Silicon Oxycarbide Dielectric Barrier

Simulation study on 4H–SiC power devices with high-k dielectric FP terminations