Abstract:Band structure of InSb thin films with $<100>$ surface orientation is calculated using empirical pseudopotential method (EPM) to evaluate the performance of nanoscale devices using InSb substrate. Contrary to the predictions by simple effective mass approximation methods (EMA), our calculation reveals that $\Gamma$ valley is still the lowest lying conduction valley. Based on EPM calculations, we obtained the important electronic structure and transport parameters, such as effective mass and valley energy minimum, of InSb thin film as a function of film thickness. Our calculations reveal that the 'effective mass' of $\Gamma$ valley electrons increases with the scaling down of the film thickness. We also provide an assessment of nanoscale InSb thin film devices using Non-Equilibrium Green's Function under the effective mass framework in the ballistic regime.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to evaluate the energy band structure of ultrathin InSb films and its impact on the performance of nanoscale n - type metal - oxide - semiconductor field - effect transistors (n - MOSFETs). Specifically, the main research questions include: 1. **Energy band structure calculation**: Calculate the energy band structure of ultrathin InSb films with <100> surface orientation using the Empirical Pseudopotential Method (EPM). Different from the simple Effective Mass Approximation (EMA), EPM can describe the electronic structure and transport properties more accurately. 2. **Γ valley with the lowest energy**: Research shows that, contrary to the prediction of EMA, the Γ valley is still the lowest conduction - band valley. This indicates that in ultrathin films, the effective mass of Γ - valley electrons increases as the film thickness decreases. 3. **Effective mass and minimum valley energy**: Through EPM calculations, important electronic structure and transport parameters of ultrathin InSb films, such as effective mass and minimum valley energy, are obtained, and the trends of these parameters with the change of film thickness are analyzed. 4. **Device performance evaluation**: Based on the energy band structure calculated by EPM, the performance of nanoscale InSb ultrathin - film double - gate MOSFET devices is evaluated using the Non - Equilibrium Green’s Function (NEGF) method in the effective mass framework, especially in the ballistic transport region. ### Key conclusions - **Γ - valley advantage maintained**: It is found that the transfer of charges from the Γ valley to the L valley does not occur, and the lateral effective mass is greater than that in the bulk material, which has a direct impact on the transport properties of the device. - **Limitations of the EMA method**: The simple Effective Mass Approximation method (EMA) has limitations in describing the electronic energy band structure of ultrathin films, especially in being unable to consider inter - band coupling and non - parabolic dispersion effects. Therefore, the EPM method is more reliable. - **Potential for practical applications**: As a new channel material, InSb has the potential to improve the performance of MOSFET devices due to its high mobility and low effective mass, especially at the nanoscale. Through these studies, the paper provides important theoretical basis and technical support for understanding and optimizing InSb - based nano - electronic devices.

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