S. Bala kumar,Jing Guo
Abstract:We study the effect of vertical electric field (E-field) on the electronic properties of multilayer graphene. We show that the effective mass, electron velocity and density-of-state of a bilayer graphene are modified under the E-field. We also study the transformation of the band structure of multilayer graphenes. E-field induces finite (zero) bandgap in the even (odd)-layer ABA-stacking graphene. On the other hand, finite bandgap is induced in all ABC-stacking graphene. We also identify the optimum E-field to obtain the maximum bandgap in the multilayer graphenes. Finally we compare our results with the experimental results of a field-effect-transistor.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to study the influence of the vertical electric field (E - field) on the electronic structure of multilayer graphene, especially how to induce the formation of band gaps by applying a vertical electric field. Specifically, the author focuses on the following aspects:
1. **Changes in effective mass and electron velocity**: How does the vertical electric field change the effective mass, electron velocity, and density of states of bilayer graphene?
2. **Formation of band gaps**: Can the vertical electric field induce band gaps in multilayer graphene with different numbers of layers and stacking methods (ABA and ABC stacking), and what are the specific characteristics of these band gaps?
3. **Optimal electric field strength**: Determine the optimal vertical electric field strength that can maximize the band gap of multilayer graphene.
4. **Experimental comparison**: Compare the theoretical simulation results with the field - effect transistor (FET) experimental results to verify the validity of the model.
### Research Background
Graphene is considered a very promising material for electronic and optoelectronic devices due to its excellent physical properties, such as high carrier mobility. However, pristine graphene is a semimetal with a zero - band gap, which limits its application in certain devices. Therefore, how to introduce a band gap in graphene has become one of the research focuses. One method is to induce a band gap by breaking the inversion symmetry, for example, by applying a vertical electric field.
### Main Findings
- **Bilayer graphene**: The vertical electric field can significantly change the effective mass and electron velocity of bilayer graphene and can induce a band gap in bilayer graphene.
- **Multilayer graphene**:
- For ABA - stacked multilayer graphene, the even - numbered - layer graphene will form a finite band gap under the action of the vertical electric field, while the odd - numbered - layer graphene maintains metallic properties (zero - band gap).
- For ABC - stacked multilayer graphene, the graphene of all layers will form a finite band gap under the action of the vertical electric field.
- **Maximization of band gaps**: The study also determined the optimal vertical electric field strength that can maximize the band gap of multilayer graphene.
- **Experimental verification**: By simulating the band - gap change in the field - effect transistor (FET) structure and comparing it with the experimental results, the validity of the theoretical model was verified.
### Formula Examples
- The tight - binding Hamiltonian of bilayer graphene is:
\[
H(k)=\begin{bmatrix}
U & \lambda(K_x, K_y)\\
\lambda^*(K_x, K_y) & - U
\end{bmatrix}
\]
where
\[
\lambda(K_x, K_y)=t_0\left(e^{i(K_x a + K_y a/2)}+e^{-i(K_x a - K_y a/2)}+e^{-i K_y a}\right)
\]
- The band - gap formula is:
\[
E_{\text{gap}}=\frac{4t_{\perp}^2}{U}
\]
Through these studies, the author hopes to provide theoretical support and technical guidance for the application of graphene in electronic and optoelectronic devices.