Abstract:The significance of backplane devices for ultra-high-resolution (UHR) display has increased with the recent development of augmented reality (AR) and virtual reality (VR) devices. Since the human visual resolution can distinguish up to 60 pixels per degree (PPD), the AR/VR device panel needs at least 3000 pixels per inch (PPI) to exceed the human retina resolution limit for clear display without screen effect. As a results, the unit pixel pitch of thin film transistor (TFT) for UHR display should be not only smaller than a few micrometers (~3 μm), TFT channel length should also be sub-micrometers level. In active matrix organic light emitting diode (AMOLED) display type, self-aligned top gate (SATG) TFT has been widely used as a planar backplane device structure because of its low parasitic capacitance and tolerance of illumination degradation caused by the light from emitting layer [1-2]. However, SATG TFT has fundamental disadvantages for device miniaturization due to its essentially required area of metallization region for reducing contact resistance and scaling limit of channel induced by carrier diffusion shrinking effective channel length. For this reason, we suggested a size tunable oxide channel VTFT structure that can achieve a high pixel density on account of structural benefit on device footprint. In this work, we fabricated amorphous indium gallium zinc oxide (a-IGZO) based VTFT. The previously published VTFT structure, channel length is determined by the thickness of spacer between source and drain electrodes [3]. Owing to spacer etching process, uneven backchannel roughness and high off current has become well-known issues of VTFT. On the contrary, the proposed VTFT structure has a controllability of effective channel aspect ratio because source and drain electrodes are able to be patterned by photolithography process. Furthermore, the parasitic capacitance is also relatively less than the formerly reported VTFTs controlled by inevitable thickness limit structurally due to the electrodes. To sum up, we not only realized the oxide channel VTFT that meets high performance for AR/VR display, but opened new application possibility to UHR electronic devices platform. Figure 1. (a) Schematic of the proposed VTFT (b) Transfer characteristic of VTFT Acknowledgement This work was supported by the Korea Evaluation Institute of Industrial Technology(KEIT) grant funded by the Korea government (MOTIE) (No. 2021-11-1283) References Kang, Dong Han, et al. "Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits." IEEE electron device letters 32.10 (2011): 1385-1387. Wang, Guoying, et al. "8.3: High Stability Against Light and Heat Based on the Top Gate Self‐Aligned a‐IGZO TFTs under OLED Dislplay." SID Symposium Digest of Technical Papers. Vol. 49. 2018. Petti, Luisa, et al. "Flexible quasi-vertical In-Ga-Zn-O thin-film transistor with 300-nm channel length." IEEE Electron Device Letters36.5 (2015): 475-477. Figure 1

22‐1: Invited Paper: About a Trench Oxide TFT

Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure

28‐1: Invited Paper: Effect of Channel Defining Layer on the Vertical Oxide TFTs for the Application to the Ultra High Resolution Display

Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2 gate insulator

The Role of Dual-Stacked Oxide Semiconductor in High Performance Thin Film Transistors

Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

Junctionless Structure Indium-Tin Oxide Thin-Film Transistors Enabling Enhanced Mechanical and Contact Stability

50‐4: Invited Paper: Low‐Temperature Metal‐Oxide Thin‐Film Transistor Technology and the Realization of Electronic Systems on Flexible Substrates

1.1: Invited Paper: TFT Backplane for Display

Enhancing the Stability and Mobility of TFTs via Indium-Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Strategies for Applications of Oxide-Based Thin Film Transistors

Oxide TFT with multilayer gate insulator for backplane of AMOLED device

Vertical oxide thin-film transistor with interfacial oxidation

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer

Vertical Oxide Channel Thin Film Transistor for Ultra-High-Resolution Display

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering