Vacancy-and doping-mediated electronic and magnetic properties of PtSSe monolayer towards optoelectronic and spintronic applications

Duy Khanh Nguyen,R. Ponce-Pérez,J. Guerrero-Sanchez,D. M. Hoat

DOI: https://doi.org/10.1039/d4ra02071e

IF: 4.036

2024-01-01

RSC Advances

Abstract:The defect- and doping-assisted functionalization of a stable Janus PtSSe monolayer towards spintronic applications is systematically investigated.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Structure, Stability, and Kinetics of Vacancy Defects in Monolayer PtSe2: A First-Principles Study

Junfeng Gao,Yuan Cheng,Tian,Xiaoling Hu,Kaiyang Zeng,Gang Zhang,Yong-Wei Zhang

DOI: https://doi.org/10.1021/acsomega.7b01619

IF: 4.1

2017-01-01

ACS Omega

Abstract:The recent epitaxial growth of monolayer PtSe2 has raised hope for its novel applications in valleytronic, spintronic, and energy-harvesting devices. Compared with 2H-phase transition-metal dichalcogenides, the 1T-phase PtSe2 is much less studied and this is especially true for its defects behaviors and their influence on electronic properties. In this article, we systemically explore the structure, stability, and kinetics of both Pt and Se vacancies in monolayer PtSe2 using first-principles calculations. By examining the relative energies of these vacancies, we identify the most stable Se/Pt single and double vacancies. In particular, we reveal a new type of Se double vacancy structure with the lowest energy. Energetically, both Se and Pt single vacancies prefer to combine to form double vacancies. All Se and Pt vacancies have remarkable influence on the electronic properties. Moreover, Pt single and double vacancies can introduce strong spin polarization in PtSe2, which may be promising for spintronic applications. These findings not only enrich the fundamental understanding of 1T-phase PtSe2 but also provide useful guidance to design PtSe2 for its optoelectronic and spintronic applications.
Point Defects in Hexagonal SiP Monolayer: A Systematic Investigation on the Electronic and Magnetic Properties

Chu Viet Ha,R Ponce‐Pérez,J. Guerrero‐Sanchez,D. M. Hoat

DOI: https://doi.org/10.1002/adts.202400320

2024-05-06

Advanced Theory and Simulations

Abstract:In this work, electronic and magnetic tunability of SiP monolayer is investigated through creating lattice defects (vacancies and antisites) and doping. In this work, point defects are proposed to modify the electronic and magnetic properties of SiP monolayer. Pristine monolayer is a non‐magnetic semiconductor 2D material with energy gap of 1.52(2.21) eV as predicted by PBE(HSE06) functional. Single Si vacancy (VSi ), Si+P divacancy (VSiP ), and substituting one P atom by one Si atom (SiP ) magnetize significantly SiP monolayer. Herein, total magnetic moments between 1.00 and 2.00 μB are obtained VSi VSiP SiP . In contrast, no magnetism is induced by single P vacancy (VP ), substituting one Si atom by one P atom (PSi ), and exchanging pair Si‐P positions (Si↔P ). Moreover, significant magnetization of SiP monolayer is also achieved by doping with single Li and Cu atoms (LiSi and CuSi ), as well as pair of Li and Cu atoms (pLiSi and pCuSi ). Total magnetic moments between 0.84 and 1.42 μB are obtained. Interestingly, the half‐metallicity is observed in LiSi and CuSi systems. When substituting P atom, F, Cl, and Br impurities reduce significantly the SiP monolayer bandgap, preserving its non‐magnetic nature. In contrast, a total magnetic moment of 1.26 μB is obtained by doping with I atom. Results presented herein may introduce the defected and doped SiP systems as prospective 2D candidates for spintronic and optoelectronic applications.

multidisciplinary sciences
Realizing new 2D spintronic materials from the non-magnetic 1T-PdO2 monolayer through vacancy defects and doping

D. M. Hoat,Vo Van On,Phan Van Huan,J. Guerrero-Sanchez

DOI: https://doi.org/10.1039/d3ra08866a

IF: 4.036

2024-02-29

RSC Advances

Abstract:In this work, vacancy- and doping-based magnetism engineering in a non-magnetic 1T-PdO 2 monolayer is explored in order to realize new two-dimensional (2D) spintronic materials. The pristine monolayer is an indirect gap semiconductor with a band gap of 1.45 (3.20) eV obtained using the PBE (HSE06) functional. Half-metallicity with a total magnetic moment of 3.95 μ B is induced by creating a single Pd vacancy, where the magnetic properties are produced mainly by O atoms around the vacancy site. In contrast, the non-magnetic nature is preserved under the effects of a single O vacancy, however a band gap reduction in the order of 37.93% is achieved. Further doping with transition metals (TMs = V, Cr, Mn, and Fe) in the Pd sublattice and with non-metals (B, C, N, and F) in the O sublattice is investigated. TM impurities lead to the emergence of a diluted magnetic semiconductor nature, where total magnetic moments of 1.00, 2.00, and 3.00 μ B are obtained in the V-, Cr(Fe)-, and Mn-doped systems, respectively. In these cases, the TMs' 3d electrons mainly originate the system's magnetism. Significant magnetization of the PdO 2 monolayer is also achieved by doping with B, N, and F atoms, where either half-metallic or diluted magnetic semiconductor natures are induced. Herein, electronic and magnetic properties are regulated mainly by the interactions between the 2p orbital of the dopant, 4d orbital of the first neighbor Pd atoms, and 2p orbital of the second neighbor O atoms. Meanwhile, C impurity induces no magnetism in the PdO 2 monolayer because of the strong electronic hybridization with their neighbor atoms. Results presented herein may introduce efficient approaches to engineer magnetism in a non-magnetic PdO 2 monolayer, such that the functionalized systems are further recommended for prospective spintronic applications.

chemistry, multidisciplinary
Defect-gradient-induced Rashba effect in van der Waals PtSe2 layers

Junhyeon Jo,Jung Hwa Kim,Choong H Kim,Jaebyeong Lee,Daeseong Choe,Inseon Oh,Seunghyun Lee,Zonghoon Lee,Hosub Jin,Jung-Woo Yoo

DOI: https://doi.org/10.1038/s41467-022-30414-4

2022-05-19

Abstract:Defect engineering is one of the key technologies in materials science, enriching the modern semiconductor industry and providing good test-beds for solid-state physics. While homogenous doping prevails in conventional defect engineering, various artificial defect distributions have been predicted to induce desired physical properties in host materials, especially associated with symmetry breakings. Here, we show layer-by-layer defect-gradients in two-dimensional PtSe2 films developed by selective plasma treatments, which break spatial inversion symmetry and give rise to the Rashba effect. Scanning transmission electron microscopy analyses reveal that Se vacancies extend down to 7 nm from the surface and Se/Pt ratio exhibits linear variation along the layers. The Rashba effect induced by broken inversion symmetry is demonstrated through the observations of nonreciprocal transport behaviors and first-principles density functional theory calculations. Our methodology paves the way for functional defect engineering that entangles spin and momentum of itinerant electrons for emerging electronic applications.
A systematic investigation of chromium and vanadium impurities in Janus Ga2SO monolayer towards spintronic applications

Duy Khanh Nguyen,Thanh Tien Nguyen,Jonathan Sanchez Guerrero,Hoat Do Minh

DOI: https://doi.org/10.1039/d4cp01255k

IF: 3.3

2024-06-14

Physical Chemistry Chemical Physics

Abstract:Transition metals (TMs) have been employed as efficient sources of magnetism in the non-magnetic two-dimensional (2D) materials. In this work, doping with chromium (Cr) and vanadium (V) is proposed to induce feature-rich electronic and magnetic properties in Janus Ga2SO monolayer towards spintronic applications. Ga2SO monolayer is a 2D semiconductor material with energy gap of 1.30(2.12) eV obtained from PBE(HSE06)-based calculations. Considering the structural asymmetry, different vacancy and doping sites are considered. Single Ga vacancy and pair Ga vacancies magnetize the monolayer with total magnetic moments between 0.69 and 3.13 μB, where the half-metallic nature is induced by single Ga1 vacancy (that bound to S atom). In these cases, the magnetism is originated mainly from S and O atoms closest to the vacancy sites. Depending on the doping site, either half-metallicity or diluted magnetic semiconductor nature are obtained by doping with Cr and V atoms with total magnetic moments of 3.00 and 2.00 μB, respectively. Herein, 3d TM impurities produces mainly the system magnetism. When substituting a pair of Ga atoms, TM atoms exhibit the antiparallel spin alignment to follow the Pauli exclusion principle, retaining the novel electronic characteristics induced by single TM dopant. Except for the case of doping with pair V atoms, total magnetic moments of 2.00 and 1.00 μB are obtained by doping with pair Cr atoms and Cr/V co-doping, respectively. Non-zero magnetic moment is derived from the different interactions of each TM atom with its neighboring atoms, which will be also studied by the Bader charge analysis. Our results introduce new promising 2D spintronic candidates, which are made by the structural modifications at Ga sites of a non-magnetic Janus Ga2SO monolayer.

chemistry, physical,physics, atomic, molecular & chemical
Point and complex defects in monolayer Pd Se 2 : Evolution of electronic structure and emergence of magnetism

Artem V. Kuklin,Lyudmila V. Begunovich,Lingfeng Gao,Han Zhang,Hans Ågren

DOI: https://doi.org/10.1103/physrevb.104.134109

IF: 3.7

2021-10-27

Physical Review B

Abstract:Layered transition-metal dichalcogenides (TMDs) constitute an emerging class of materials that provide researchers a platform to realize fundamental studies and to design promising optoelectronic devices. While defects are an almost unavoidable part of TMDs, they bring additional interesting properties absent in defect-free layers. Moreover, the controlled introduction of defects in TMDs makes it possible to tailor the electromagnetic properties of the materials. Here we report defect-induced properties of single-layer PdSe2 and demonstrate the emergence of magnetism at the nanoscale. Our first-principle calculations indicate that Se vacancies create in-gap defect states, which can be responsible for trapping of carriers. The complex square VPd+4Se vacancy induces spin-polarized states with a total local magnetic moment of 2μB per defect, making it possible to introduce magnetization into PdSe2 and therefore expand the family of two-dimensional (2D) magnets. The defect formation energies are much lower compared to many other TMD materials that can explain the presence of a large number of Se defects after mechanical exfoliation of PdSe2 layers, while the central location of the Pd atoms preserves them from exfoliation-induced defect formation. The negatively charged vacancies are prone to form and in many cases demonstrate spin-polarized states. The small diffusion barrier of VSe in 2D PdSe2 leads to an easy room-temperature migration, while VPd demonstrates a high diffusion barrier preventing its spontaneous migration. As a guide for experimentalists, we simulate and characterize scanning tunneling microscope images in valence and conduction states and estimate the electron-beam energy for a controllable production of various defect patterns. These intriguing findings make PdSe2 an ideal platform to study defect-induced phenomena.

physics, condensed matter, applied,materials science, multidisciplinary
Functionalization of a GaSe Monolayer by Vacancy and Chemical Element Doping

L. Ao,H. Y. Xiao,X. Xiang,S. Li,K. Z. Liu,H. Huang,X. T. Zu

DOI: https://doi.org/10.1039/c5cp00397k

2015-01-01

Abstract:Based on first-principles plane-wave calculations, functionalization of the two-dimensional single-layered GaSe structure through vacancy and chemical element doping has been investigated. Our calculations show that the pristine GaSe monolayer, which is normally a non-magnetic, indirect-band-gap semiconductor, can induce net magnetic moments by introduction of Ga mono-vacancy, Ga di-vacancy, and GaSe3 and Ga2Se6 vacancy complexes. Magnetic moments can also be induced by selectively doping specific transition-metal atoms as well as A group atoms. The introduced donor or acceptor states are localized in the band gap, which expands the utilization of the single-layered GaSe in nanoelectronics and spintronics. In spite of the intrinsic p-type character of the two-dimensional GaSe material, substitution of Si for Ga and substitution of Cl for Se exhibit n-type character at relatively low dopant concentrations. These findings will provide useful supplements to the experimental studies on the newly synthesized two-dimensional layered metal monochalcogenides, which allows us to go beyond the current scope that is limited to applications within graphene, BN, and transition-metal dichalcogenide-based nanostructures.
3D Imaging and Manipulation of Subsurface Selenium Vacancies in PdSe_{2}.

Giang D Nguyen,Liangbo Liang,Qiang Zou,Mingming Fu,Akinola D Oyedele,Bobby G Sumpter,Zheng Liu,Zheng Gai,Kai Xiao,An-Ping Li

DOI: https://doi.org/10.1103/PhysRevLett.121.086101

IF: 8.6

2019-01-01

Physical Review Letters

Abstract:Two-dimensional materials such as layered transition-metal dichalcogenides (TMDs) are ideal platforms for studying defect behaviors, an essential step towards defect engineering for novel material functions. Here, we image the 3D lattice locations of selenium-vacancy V-Se defects and manipulate them using a scanning tunneling microscope (STM) near the surface of PdSe2, a recently discovered pentagonal layered TMD. The VSe show a characterisitc charging ring in a spatially resolved conductance map, based on which we can determine its subsurface lattice location precisely. Using the STM tip, not only can we reversibly switch the defect states between charge neutral and charge negative, but also trigger migrations of VSe defects. This allows a demonstration of direct "writing" and "erasing" of atomic defects and tracing the diffusion pathways. First-principles calculations reveal a small diffusion barrier of V-Se in PdSe2, which is much lower than S vacancy in MoS2 or an O vacancy in TiO2. This finding opens an opportunity of defect engineering in PdSe2 for such as controlled phase transformations and resistive-switching memory device application.
Magnetic and transport properties of two-dimensional ferromagnet VSe 2 with Se vacancies

Mengjie Wei,Haoran Ma,Haoshen Ye,Jianli Wang,Dongmei Bai

DOI: https://doi.org/10.1016/j.jmmm.2023.170683

IF: 3.097

2023-04-02

Journal of Magnetism and Magnetic Materials

Abstract:As a room-temperature van der Waals intrinsic ferromagnetic semiconductor, monolayer VSe 2 was studied extensively for both fundamental research and potential low-dimension semiconductor spintronic applications. Defects are inevitably encountered and can affect the electronic, magnetic, and transport properties during the experimental synthesis of VSe 2 monolayer. However, the study of defects in VSe 2 monolayer is still lacking at the atomic level. Here, the electronic, magnetic, and transport properties of VSe 2 monolayer with Se vacancies are investigated by first-principles density-functional method. With the direction of easy magnetization axes unchanged, introducing Se vacancies results in the decrease of magnetic anisotropy energy and Curie temperature, which can be further increased by applying in-plane biaxial strain. After Se vacancies are introduced, the conductivity of the system decreases, while the larger doping range is obtained for pure spin-polarized current. The transition from semiconductor to half-metal with 100% spin polarization can be realized by introducing Se bivacancy in VSe 2 monolayer, which is highly promising for next-generation spin filter, spin injection and spin transport nanodevices. PACS: 68.43.Bc; 73.20.At; 75.70.Cn

materials science, multidisciplinary,physics, condensed matter
Modulating the electronic, magnetic and optical properties of 1T-SnSe2 monolayer by defects: An ab initio study

Anwar Ali,Jian-Min Zhang,Iltaf Muhammad,Ismail Shahid,Iqtidar Ahmad

DOI: https://doi.org/10.1016/j.spmi.2020.106621

IF: 3.22

2020-09-01

Superlattices and Microstructures

Abstract:We investigate the effect of vacancies and doping on the electronic, magnetic and optical properties of 1T-SnSe2 monolayer by using density functional theory calculations. The results reveal that the semiconducting 1T-SnSe2 monolayer becomes a half-metal on creating one tin vacancy (V1Sn), while it is still a semiconducting on creating one selenium vacancy (V1Se), two selenium vacancy (V2Se), as well as one tin and one selenium vacancy (V1Sn+1Se). The V1Sn and V1Sn+1Se vacancies induce magnetic ground states with net magnetic moments of 4 and 2 μB respectively, while the V1Se and V2Se vacancies induce nonmagnetic ground states. In Mo-doped 1T-SnSe2 monolayer, crystal-field splitting of Mo-4d orbital in the octahedral environment induces net magnetic moment of 2 μB. The band structure and density of states also show that the Mo-doped system is a magnetic semiconductor. In addition, the defective 1T-SnSe2 mononlayer can also enhanced the absorption efficiency of the solar energy, particularly in the infrared region. An interesting red-shift phenomenon has been observed in the curves of imaginary part of the dielectric function and absorption spectra for the defect systems, suggesting their quite promising applications in optoelectronic devices.

physics, condensed matter
Electronic and Optical Properties of Sulfur Vacancy-Defect Monolayer PtS2: A First-Principles Study

Yanju Ji,Yifan Liu,Yuanfeng Xu,Liqiang Liu,Ying Chen

DOI: https://doi.org/10.1016/j.matchemphys.2020.123588

IF: 4.778

2020-01-01

Materials Chemistry and Physics

Abstract:In this work, Density Functional Theory (DFT) simulations are performed to study the sulfur vacancy in monolayer PtS2. The structural, electronic, and optical properties of monolayer PtS2 with sulfur vacancy have been investigated. The sulfur vacancy slightly affects the structure near the vacancy and the remaining atoms show inward relaxation. The formation energies of a single sulfur vacancy are 1.65-1.73 eV in S-rich conditions and 0.69-0.77 eV in the Pt-rich environment. The sulfur vacancy induced three defect bands in the bandgap. It is found that when the concentration of Vs increases, then the gap between the highest occupied and lowest unoccupied state decreases. The sulfur vacancy increases the in-plane static dielectric constant and causes extra epsilon(2)//peaks which appear in the range of 0.5-1.8 eV, i.e., infrared absorption. Finally, we show that an O atom, O-2 molecule, and three hydrogens can cause the partial passivation of sulfur vacancy. Though the three schemes cannot remove all the defective states of the gap, the bandgaps of the defective PtS2 monolayer became similar to the perfect one. We suggest that the proposed passivation methods may further facilitate their practical applications.
Atomic‐Layer Controlled Transition from Inverse Rashba‐Edelstein Effect to Inverse Spin Hall Effect in Two‐Dimensional PtSe2 Probed by THz Spintronic Emission

Khasan Abdukayumov,Martin Mičica,Fatima Ibrahim,Libor Vojáček,Céline Vergnaud,Alain Marty,Jean‐Yves Veuillen,Pierre Mallet,Isabelle Gomes de Moraes,Djordje Dosenovic,Serge Gambarelli,Vincent Maurel,Adrien Wright,Jérôme Tignon,Juliette Mangeney,Abdelkarim Ouerghi,Vincent Renard,Florie Mesple,Jing Li,Frédéric Bonell,Hanako Okuno,Mair Chshiev,Jean‐Marie George,Henri Jaffrès,Sukhdeep Dhillon,Matthieu Jamet

DOI: https://doi.org/10.1002/adma.202304243

IF: 29.4

2023-12-31

Advanced Materials

Abstract:Two‐dimensional (2D) materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for spin‐charge conversion (SCC) as they possess strong spin‐orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field or strain. Here, we study spin‐to‐charge conversion in epitaxially grown 2D PtSe2 by THz spintronic emission since its 1T crystal symmetry and strong SOC favor SCC. High quality of as‐grown PtSe2 layers is demonstrated, followed by in‐situ ferromagnet deposition by sputtering that leaves the PtSe2 unaffected, resulting in well‐defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness dependent electronic structure of PtSe2 allows the control of SCC. Indeed, we demonstrate the transition from the inverse Rashba‐Edelstein effect (IREE) in 1‐3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE. This band structure flexibility makes PtSe2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC but also to develop tuneable THz spintronic emitters. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Dopant-induced Magnetism in Platinum Telluride Monolayer Regulated by Strain Engineering

Yun Shan,Tinghui Li,Lizhe Liu

DOI: https://doi.org/10.1016/j.physe.2019.113741

IF: 3.369

2019-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Platinum telluride (PtTe2), a new member of metallic noble-transition-metal dichalcogenides, attracts significant attention because of intriguing physical properties and applications in electronics, optoelectronics. However, the formation and regulation of magnetism as an important application for spin electronics have not been realized in PtTe2 monolayer so far. Herein, we report that the magnetism can be realized by doping nitrogen elements or introducing cationic vacancies, in which the magnetic behavior strongly depends on the applied external strain. Density functional theory calculations disclose that the deformation induced by external strain not only makes the magnetic characteristic originating from cationic vacancies disappear suddenly but also leads to a rapid transformation from half-metallicity to metallicity. However, this magnetic mutation dependent of external strain cannot occur in the N-doped PtTe(2 )monolayer. Our results provide an effective strategy for obtaining and regulating magnetic behavior.
Electronic and magnetic properties of GeS monolayer effected by point defects and doping

Phuong Thuy Bui,Vo Van On,J. Guerrero-Sanchez,D. M. Hoat

DOI: https://doi.org/10.1039/d3ra07942b

IF: 4.036

2024-01-13

RSC Advances

Abstract:In this work, defect engineering and doping are proposed to effectively functionalize a germanium sulfide (GeS) mononolayer. With a buckled hexagonal structure, the good dynamical and thermal stability of the GeS monolayer is confirmed. PBE(HSE06)-based calculations assert the indirect gap semiconductor nature of this two-dimensional (2D) material with a relatively large band gap of 2.48(3.28) eV. The creation of a single Ge vacancy magnetizes the monolayer with a total magnetic moment of 1.99 μ B , creating a the feature-rich half-metallic nature. Va S vacancy, Va GeS divacancy, S Ge and Ge S antisites preserve the non-magnetic nature; however, they induce considerable band gap reduction of the order 47.98%, 89.11%, 29.84%, and 62.5%, respectively. By doping with transition metals (TMs), large total magnetic moments of 3.00, 4.00, and 5.00 μ B are obtained with V, Cr–Fe, and Mn impurities, respectively. The 3d orbital of TM dopants mainly regulates the electronic and magnetic properties, which induces either the half-metallic or diluted magnetic semiconductor nature. It is found that the doping site plays a determinant role in the case of doping with VA-group atoms (P and As). The GeS monolayer can be metallized by doping the Ge sublattice, meanwhile both spin states exhibit semiconductor character with strong spin polarization upon doping the S sublattice to obtain a diluted magnetic semiconductor nature with a total magnetic moment of 1.00 μ B . In these cases, the magnetism originates mainly from P and As impurities. The obtained results suggest an efficient approach to functionalize the GeS monolayer for optoelectronic and spintronic applications.

chemistry, multidisciplinary
Pnictogen Atom Substitution to Modify the Electronic and Magnetic Properties of SiS2 Monolayer: A DFT Study

Nguyen Thi Han,J. Guerrero‐Sanchez,D. M. Hoat

DOI: https://doi.org/10.1002/adts.202400900

2024-11-23

Advanced Theory and Simulations

Abstract:It is asserted that SiS2 monolayer in hexagonal 1T‐phase has good structural stability. Further, vacancy and doping with pnictogen atoms are proposed to induce feature‐rich electronic and magnetic properties in this 2D material. The density functional theory (DFT) is employed to study the modulation of electronic and magnetic properties of SiS2 monolayer through doping with pnictogen (P and As) atoms. SiS2 monolayer is intrinsically non‐magnetic, exhibiting the semiconductor nature with indirect bandgap of 1.39(2.26) eV provided by standard(hybrid) functional. This 2D material is metallized under effects of single Si vacancy, single S vacancy, and pair Si─S vacancies. In the latter case, significant magnetism with a total magnetic moment of 1.55 μB is produced mainly by S atoms around the vacancy sites. The monolayer metallization takes place also when doping with P and As atoms at Si sublattice, preserving the nonmagnetic nature. Meanwhile, P and As substitution leads to the emergence of magnetism with total magnetic moments of 0.93 and 0.99 μB , respectively. Herein, magnetic properties are produced mainly by the outermost p orbital of pnictogen impurities. Interestingly, the results assert the emergence of the half‐metallicity, which gives evidence of new highly spin‐polarized 2D materials. Further, doping with pair P/P, As/As, and P/As atoms are also considered with different doping configurations. It is found that the nonmagnetic semiconductor nature is preserved upon doping with pair pnictogen atoms, however, the indirect‐to‐direct gap transition is induced. Moreover, the energy gap exhibits large reduction between 51.80% and 77.70%. The findings in this work may suggest the formation of prospective optoelectronic and spintronic 2D materials by doping SiS2 monolayer with pnictogen atoms.

multidisciplinary sciences
Intrinsic Point Defects in Ultrathin 1T-PtSe2 Layers

Husong Zheng,Yichul Choi,Fazel Baniasadi,Dake Hu,Liying Jiao,Kyungwha Park,Chenggang Tao

DOI: https://doi.org/10.48550/arXiv.1808.04719

2018-08-14

Mesoscale and Nanoscale Physics

Abstract:Among two-dimensional (2D) transition metal dichalcogenides (TMDs), platinum diselenide (PtSe2) stands at a unique place in the sense that it undergoes a phase transition from type-II Dirac semimetal to indirect-gap semiconductor as thickness decreases. Defects in 2D TMDs are ubiquitous and play crucial roles in understanding and tuning electronic, optical, and magnetic properties. Here we investigate intrinsic point defects in ultrathin 1T-PtSe2 layers grown on mica through the chemical vapor transport (CVT) method, using scanning tunneling microscopy and spectroscopy (STM/STS) and first-principles calculations. We observed five types of distinct defects from STM topography images and obtained the local density of states of the defects. By combining the STM results with the first-principles calculations, we identified the types and characteristics of these defects, which are Pt vacancies at the topmost and next monolayers, Se vacancies in the topmost monolayer, and Se antisites at Pt sites within the topmost monolayer. Our study shows that the Se antisite defects are the most abundant with the lowest formation energy in a Se-rich growth condition, in contrast to cases of 2D molybdenum disulfide (MoS2) family. Our findings would provide critical insight into tuning of carrier mobility, charge carrier relaxation, and electron-hole recombination rates by defect engineering or varying growth condition in few-layer 1T-PtSe2 and other related 2D materials.
Electronic and magnetic properties of single chalcogen vacancies in MoS$_2$/Au(111)

Sergey Trishin,Christian Lotze,Nils Krane,Katharina J. Franke

DOI: https://doi.org/10.1103/PhysRevB.108.165414

2023-08-08

Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDC) are considered highly promising platforms for next-generation optoelectronic devices. Owing to its atomically thin structure, device performance is strongly impacted by a minute amount of defects. Although defects are usually considered to be disturbing, defect engineering has become an important strategy to control and design new properties of 2D materials. Here, we produce single S vacancies in a monolayer of MoS$_2$ on Au(111). Using a combination of scanning tunneling and atomic force microscopy, we show that these defects are negatively charged and give rise to a Kondo resonance, revealing the presence of an unpaired electron spin exchange coupled to the metal substrate. The strength of the exchange coupling depends on the density of states at the Fermi level, which is modulated by the moiré structure of the MoS$_2$ lattice and the Au(111) substrate. In the absence of direct hybridization of MoS$_2$ with the metal substrate, the S vacancy remains charge-neutral. Our results suggest that defect engineering may be used to induce and tune magnetic properties of otherwise non-magnetic materials.

Mesoscale and Nanoscale Physics
Janus Doping of Sulfur into Platinum Diselenide Ribbons

Zechen Li,Honglin Wang,Huaipeng Wang,Yunpeng Ma,Fangzhu Qing,Xuesong Li,Qian Li,Dan Xie,Hongwei Zhu

DOI: https://doi.org/10.1002/smtd.202400892

IF: 12.4

2024-08-23

Small Methods

Abstract:2D platinum diselenide (PtSe2), a novel member of the transition metal dichalcogenides (TMDCs) family, possesses many excellent properties, including a layer-dependent bandgap, high carrier mobility, and broadband response, making it promise for applications in technologies like field-effect transistors and room-temperature photodetectors. Doping represents an effective method to modify the electrical properties of 2D TMDCs and to bestow upon them additional functions. However, to date, little research has been conducted on the successful doping of 2D PtSe2 for modification. In this study, sulfur (S) powder is utilized during the chemical vapor deposition growth process of 2D PtSe2 ribbons and successfully integrated into the PtSe2 lattice through substitutional doping. The Au substrate significantly decreases the substitution energy of Se atoms in the lower layer of PtSe2, resulting in the formation of the Janus PtSSe structure. S-doped PtSe2 ribbons demonstrate significant symmetry breaking and enhanced electrical properties, showcasing a strong nonlinear optical response and certain synaptic plasticity, further simulating some neuromorphological processes. This study not only demonstrates a viable method for controllable doping and modification of 2D PtSe2 but also establishes a platform for exploring the characteristics of Janus TMDCs.
Spin transport properties of T-phase VSe2 2D materials based on eight-atom-ring line defects

Xuelian Sun,Xinxin Jiang,Zhikuan Wang,Xuhui Xu,Lei Yang,Quan Gao,Dongmei Li,Bin Cui,Desheng Liu

DOI: https://doi.org/10.1016/j.rinp.2023.106553

IF: 4.565

2023-06-01

Results in Physics

Abstract:Defects play a crucial role in modulating the properties of solid-state materials by inducing localized states that often benefit magnetic moments. Recently, direct experimental observations have shown the appearance of bunches of eight-atom-ring line defects in the T-phase VSe2 monolayer, a remarkable room-temperature two-dimensional magnetic metal. Using first-principles calculations, we have found that these line defects could enhance the magnetic moments, and half-metallicity (nearly 100% spin polarization) can be achieved in the structure with the densest defects. Furthermore, our analysis of the partial charge density distribution shows that a closer inter-defect distance between the d-states of vanadium atoms and p-states of selenium atoms increases the penalty of electrons occupying the spin-minority states. Moreover, we have discovered the high conductivity channel exhibits negative differential resistance characteristics within a bias range of 0.2 to 0.4 V (–0.4 to –0.2 V). Our findings broaden the scope of the applications of two-dimensional materials in spintronics and provide some theoretical guidance for the design of high-performance spintronic devices.

physics, multidisciplinary,materials science
Versatile Electronic and Magnetic Properties of Chemically Doped 2D Platinum Diselenide Monolayers: A First-Principles Study

Muhammad Zulfiqar,Geng Li,Yinchang Zhao,Safdar Nazir,Jun Ni

DOI: https://doi.org/10.1063/1.5011054

IF: 1.697

2017-01-01

AIP Advances

Abstract:First-principles calculations have been performed to study the chemically doped platinum diselenide (PtSe2) monolayers. We examine the stability of different doping sites by calculating the formation energy. The different electronic and magnetic characters originate from hybridization between the dopants and nearest local atoms. Exceptional electronic and magnetic characters are observed in the B-, P-, Li-, and Ca-doped cases because of doping site independence. The magnetic behavior of the dopant atoms is found to be complex because of interplay between strong structural relaxation, spin lattice coupling, and crystal field splitting. More interestingly, the ferromagnetic half metallic character obtained in B- and N-doped cases, expected to be very useful because of large half metallic energy bandgap. The interaction between dopants is analyzed as a function of their separation, showing that substitution typically counteracts spin polarization. The long range ferromagnetic behavior can be established with improved stability which suggest the high magnetic transition temperatures, found for the B-, F-, N-, P-, and Li-doped at Pt sites which make them potential candidate for applications in electronic devices as well as in spintronics.

Vacancy-and doping-mediated electronic and magnetic properties of PtSSe monolayer towards optoelectronic and spintronic applications

Structure, Stability, and Kinetics of Vacancy Defects in Monolayer PtSe2: A First-Principles Study

Point Defects in Hexagonal SiP Monolayer: A Systematic Investigation on the Electronic and Magnetic Properties

Realizing new 2D spintronic materials from the non-magnetic 1T-PdO2 monolayer through vacancy defects and doping

Defect-gradient-induced Rashba effect in van der Waals PtSe2 layers

A systematic investigation of chromium and vanadium impurities in Janus Ga2SO monolayer towards spintronic applications

Point and complex defects in monolayer Pd Se 2 : Evolution of electronic structure and emergence of magnetism

Functionalization of a GaSe Monolayer by Vacancy and Chemical Element Doping

3D Imaging and Manipulation of Subsurface Selenium Vacancies in PdSe_{2}.

Magnetic and transport properties of two-dimensional ferromagnet VSe 2 with Se vacancies

Modulating the electronic, magnetic and optical properties of 1T-SnSe2 monolayer by defects: An ab initio study

Electronic and Optical Properties of Sulfur Vacancy-Defect Monolayer PtS2: A First-Principles Study

Atomic‐Layer Controlled Transition from Inverse Rashba‐Edelstein Effect to Inverse Spin Hall Effect in Two‐Dimensional PtSe2 Probed by THz Spintronic Emission

Dopant-induced Magnetism in Platinum Telluride Monolayer Regulated by Strain Engineering

Electronic and magnetic properties of GeS monolayer effected by point defects and doping

Pnictogen Atom Substitution to Modify the Electronic and Magnetic Properties of SiS2 Monolayer: A DFT Study

Intrinsic Point Defects in Ultrathin 1T-PtSe2 Layers

Electronic and magnetic properties of single chalcogen vacancies in MoS$_2$/Au(111)

Janus Doping of Sulfur into Platinum Diselenide Ribbons

Spin transport properties of T-phase VSe2 2D materials based on eight-atom-ring line defects

Versatile Electronic and Magnetic Properties of Chemically Doped 2D Platinum Diselenide Monolayers: A First-Principles Study