Hardware accelerators based on nanotube transistors

Kaixiang Kang,Lingzhi Wu,Min Li,Jianwen Zhao

DOI: https://doi.org/10.1038/s41928-024-01231-y

IF: 33.255

2024-08-14

Nature Electronics

Abstract:Nature Electronics, Published online: 12 August 2024; doi:10.1038/s41928-024-01231-y High-purity carbon nanotubes can be used to create a tensor processing unit that has 3,000 transistors and a systolic array architecture.

engineering, electrical & electronic

What problem does this paper attempt to address?

Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

Dhanushkodi D. Mariappan,Sanha Kim,Junjie Zhao,Hangbo Zhao,Ulrich Muecke,Karen Gleason,Akintunde Ibitayo Akinwande,A. John Hart

DOI: https://doi.org/10.1021/acsanm.2c03247

IF: 6.14

2023-01-01

ACS Applied Nano Materials

Abstract:To achieve high-performance printed electronic devices, scalable and cost-effective printing of high-quality metallic electrodes with narrow gaps, such as for transistors with short channel lengths, is desirable. Here, we demonstrate short channel (<10 mu m) transistors, using thin (<100-200 nm) electrodes fabricated by flexographic printing with nanoporous stamps, with single-wall carbon nanotubes (SWCNTs) as the network semiconductor. The nanoporous stamps comprise polymer-coated vertically aligned carbon nanotubes and facilitate control of the printed ink thickness in the 50-200 nm range. The measured on-off ratio and mobility meet or exceed those of previously reported SWCNT network transistors fabricated by alternative printing methods.
Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Chenwei Fan,Xiaohan Cheng,Lin Xu,Maguang Zhu,Sujuan Ding,Chuanhong Jin,Yunong Xie,Lian-Mao Peng,Zhiyong Zhang

DOI: https://doi.org/10.1002/inf2.12420

2023-01-01

InfoMat

Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.
A Carbon-Nanotube-based Tensor Processing Unit

Jia Si,Panpan Zhang,Chenyi Zhao,Dongyi Lin,Lin Xu,Haitao Xu,Lijun Liu,Jianhua Jiang,Lian-Mao Peng,Zhiyong Zhang

DOI: https://doi.org/10.1038/s41928-024-01211-2

IF: 33.255

2024-01-01

Nature Electronics

Abstract:The growth of data-intensive computing tasks requires processing units with higher performance and energy efficiency, but these requirements are increasingly difficult to achieve with conventional semiconductor technology. One potential solution is to combine developments in devices with innovations in system architecture. Here we report a tensor processing unit (TPU) that is based on 3,000 carbon nanotube field-effect transistors and can perform energy-efficient convolution operations and matrix multiplication. The TPU is constructed with a systolic array architecture that allows parallel 2 bit integer multiply-accumulate operations. A five-layer convolutional neural network based on the TPU can perform MNIST image recognition with an accuracy of up to 88% for a power consumption of 295 mu W. We use an optimized nanotube fabrication process that offers a semiconductor purity of 99.9999% and ultraclean surfaces, leading to transistors with high on-current densities and uniformity. Using system-level simulations, we estimate that an 8 bit TPU made with nanotube transistors at a 180 nm technology node could reach a main frequency of 850 MHz and an energy efficiency of 1 tera-operations per second per watt. Carbon nanotube networks made with high purity and ultraclean interfaces can be used to make a tensor processing unit that contains 3,000 transistors in a systolic array architecture to improve energy efficiency in accelerating neural network tasks.
Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Fan Xia,Tian Xia,Li Xiang,Sujuan Ding,Shuo Li,Yucheng Yin,Meiqi Xi,Chuanhong Jin,Xuelei Liang,Youfan Hu

DOI: https://doi.org/10.1021/acsami.2c07825

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Biological nervous systems evolved in nature have marvelous information processing capacities, which have great reference value for modern information technologies. To expand the function of electronic devices with applications in smart health monitoring and treatment, wearable energy-efficient computing, neuroprosthetics, etc., flexible artificial synapses for neuromorphic computing will play a crucial role. Here, carbon nanotube-based ferroelectric synaptic transistors are realized on ultrathin flexible substrates via a low-temperature approach not exceeding 90 degrees C to grow ferroelectric dielectrics in which the single-pulse, pairedpulse, and repetitive-pulse responses testify to well-mimicked plasticity in artificial synapses. The long-term potentiation and long-term depression processes in the device demonstrate a dynamic range as large as 2000x, and 360 distinguishable conductance states are achieved with a weight increase/decrease nonlinearity of no more than 1 by applying stepped identical pulses. The stability of the device is verified by the almost unchanged performance after the device is kept in ambient conditions without additional passivation for 240 days. An artificial neural network-based simulation is conducted to benchmark the hardware performance of the neuromorphic devices in which a pattern recognition accuracy of 95.24% is achieved.
Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Zhiyong Zhang,Yanxia Lin,Yu Cao,Sujuan Ding,Lin Xu,Chenchen Liu,Qianlan Hu,Chuanhong Jin,Lian-Mao Peng

DOI: https://doi.org/10.21203/rs.3.rs-2000386/v1

2022-01-01

Abstract:Abstract Transistors on aligned semiconducting carbon nanotubes (A-CNTs) have been considered a promising substitute for mainstream Si transistors to extend integrated circuit (IC) technology owing to their potential advantages of easy miniaturization and high energy efficiency, but whether A-CNT FETs can be scalably fabricated with ultrascaled whole dimensions while maintaining high performance remains questionable. Here, we explore the whole size scaling down potential of A-CNT transistors and demonstrate the possibility of implementing such small-geometry transistors in ultra-large-scale ICs that consist of billions of transistors. A-CNT transistors with a contacted gate pitch (CGP) of 175 nm have been achieved by simultaneously scaling the gate length and the contact length, and exhibit an on-current of 2.24 mA/μm and a peak transconductance of 1.64 mS/μm, surpassing silicon 45 nm node transistors in terms of both size and electronic performance. A static random-access memory (SRAM) cell has been built using six A-CNT transistors in an area of 0.967 μm2, which is comparable to the commercial silicon 90 nm technology node and is the smallest SRAM cell based on non-Si semiconductors. Furthermore, a full-contact structure is introduced between the metal and A-CNTs to achieve a contact resistance as low as 90 Ω·μm and to reduce the dependence on the contact length. A-CNT transistors downsized to a CGP of 55 nm (corresponding to the silicon 10 nm technology node) have been demonstrated to outperform 10 nm Si MOS transistors in terms of carrier mobility and Fermi velocity, indicating the tremendous potential of A-CNT transistors in high-performance digital ICs of sub 10 nm nodes.
High-Performance Carbon Nanotube Thin-Film Transistor Technology

Lian-Mao Peng

DOI: https://doi.org/10.1021/acsnano.3c05753

IF: 17.1

2023-11-28

ACS Nano

Abstract:Semiconducting single-walled carbon nanotubes (CNTs) have ideal electronic, chemical, and mechanical properties and are ideal channel materials for constructing transistors in the post-Moore era. Experiments have shown that CNT-based planar CMOS transistors can be scaled down to sub-10 nm technology nodes, demonstrating excellent performance far exceeding the silicon limit. At the same time, CNT electronic technology is essentially a thin-film transistor technology, which enables the construction of chips on such substrates as glass and polymers with an area of several meters, providing technical support for large-area and flexible electronic applications. In addition, since CNT electronics technology involves only low-temperature processes (less than 400 °C), the monolithic 3D integration of logic and memory devices can be realized which can greatly improve the comprehensive performance of the chip and lead to a thousand-fold performance increase for special data structures, especially in AI applications.
Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Sung Hun Jin,Simon N. Dunham,Jizhou Song,Xu Xie,Ji-hun Kim,Chaofeng Lu,Ahmad Islam,Frank Du,Jaeseong Kim,Johnny Felts,Yuhang Li,Feng Xiong,Muhammad A. Wahab,Monisha Menon,Eugene Cho,Kyle L. Grosse,Dong Joon Lee,Ha Uk Chung,Eric Pop,Muhammad A. Alam,William P. King,Yonggang Huang,John A. Rogers

DOI: https://doi.org/10.1038/nnano.2013.56

IF: 38.3

2013-01-01

Nature Nanotechnology

Abstract:Among the remarkable variety of semiconducting nanomaterials that have been discovered over the past two decades, single-walled carbon nanotubes remain uniquely well suited for applications in high-performance electronics, sensors and other technologies. The most advanced opportunities demand the ability to form perfectly aligned, horizontal arrays of purely semiconducting, chemically pristine carbon nanotubes. Here, we present strategies that offer this capability. Nanoscale thermocapillary flows in thin-film organic coatings followed by reactive ion etching serve as highly efficient means for selectively removing metallic carbon nanotubes from electronically heterogeneous aligned arrays grown on quartz substrates. The low temperatures and unusual physics associated with this process enable robust, scalable operation, with clear potential for practical use. We carry out detailed experimental and theoretical studies to reveal all of the essential attributes of the underlying thermophysical phenomena. We demonstrate use of the purified arrays in transistors that achieve mobilities exceeding 1,000 cm 2 V −1 s −1 and on/off switching ratios of ∼10,000 with current outputs in the milliamp range. Simple logic gates built using such devices represent the first steps toward integration into more complex circuits.
Nanotube and Nanowire Transistors

G. A. J. Amaratunga,A. S. Teh,S. N. Cha,G. W. Ho,J. E. Jang,Y. Yang,Y. Choi,K. B. K. Teo,S. H. Dalal,D. J. Kang,N. L. Rupesinghe,W. I. Milne,D. Hasko,M. E. Welland,J. M. Kim

DOI: https://doi.org/10.1109/smicnd.2005.1558700

2005-01-01

Abstract:In this paper we report the use of in-situ grown single wall carbon nanotubes (SWCNTs) from pre-patterned catalyst islands to construct nanotube electronics. The SWCNTs were grown via thermal chemical vapour deposition (CVD) on catalysts islands which were prepared by sputtering, initially, alignment marks are patterned simultaneously with the catalysts islands to enable accurate overlay of contact patterns during the top down fabrication approach for SWCNT devices. The gate transfer characteristics of p-channel SWCNTs are presented. The use of pre-patterned catalyst islands allows control of the SWCNT location required for integrated circuits. Characteristics of ZnO nanowire transistors are also introduced. Very high mobilities are measured in n-channel devices in which the gate is defined in a self aligned manner to have a nanoscale air-gap insulator. The characteristics of the ZnO transistor are comparable to those of achieved from SWCNTs. This raises the possibility of using SWCNTs for p-channel and ZnO nanowires for n-channel in complimentary switching devices.
Three-dimensional Architecture of Carbon Nanotube Transistors with High Speed and Performance

Dr. Akanksha,Dr. Apoorva

DOI: https://doi.org/10.59670/ml.v20is13.6282

2023-12-20

MIGRATION LETTERS

Abstract:Transistors, essential components of contemporary electronics, are crucial in providing electricity for the technology-dependent society. Given the continuously growing need for enhanced speed capabilities in electronic devices, it has become crucial to investigate innovative materials and structures to fulfill these demands. Carbon Nanotubes (CNTs) have emerged as a desirable contender due to their remarkable electrical characteristics, characterized by elevated carrier mobility and nanoscale dimensions. This study explores the importance of high-speed performance in the contemporary technology-driven environment and emphasizes the crucial role played by transistors in attaining this objective. This research underscores the distinctive attributes of CNTs, including their exceptional electrical conductivity, mechanical robustness, and dimensions, making them a highly suitable contender for advanced transistors in future applications. The current transistor layouts encounter notable obstacles in effectively using the whole capabilities of CNTs, such as the difficulty associated with achieving accurate alignment and addressing connection concerns. To tackle the issues, this study presents a novel three-dimensional CNT Architecture (3D-CNTA) design that utilizes state-of-the-art Computer-Aided Design (CAD) software to achieve accurate spatial modeling. The 3D-CNTA that has been suggested exhibits exceptional performance in several aspects, encompassing power consumption (0.3 Watts), noise (2.6 microvolts), delay (6.6 nanoseconds), gain (36.25 dB), energy efficiency (2.13 femtojoules per transition), and simulation accuracy (95%).
Carbon nanotube digital electronics

Lian-Mao Peng,Zhiyong Zhang,Chenguang Qiu

DOI: https://doi.org/10.1038/s41928-019-0330-2

IF: 33.255

2019-01-01

Nature Electronics

Abstract:It is anticipated that the scaling of silicon complementary metal–oxide–semiconductor (CMOS) devices will end around 2020, but alternative technologies capable of maintaining advances in computing power and energy efficiency have not yet been established. Among various options, carbon-nanotube-based electronics has been shown to be one of the most promising candidates. A range of methods have been developed to prepare high-purity semiconducting carbon nanotubes suitable for use in integrated circuits, and 5 nm nanotube transistors with superior performance to that of silicon CMOS have been demonstrated. Here, we explore the potential of carbon nanotube digital electronics. We examine the development of nanotube-based CMOS field-effect transistors and the different nanotube material systems available to build integrated circuits. We also highlight the medium-scale integrated circuits created to date and consider the challenges that exist in delivering large-scale systems.
Carbon nanotube transistors scaled to a 40-nanometer footprint

Qing Cao,Jerry Tersoff,Damon B Farmer,Yu Zhu,Shu-Jen Han,Damon B. Farmer

DOI: https://doi.org/10.1126/science.aan2476

IF: 56.9

2017-06-30

Science

Abstract:Carbon nanotubes on the roadmap The formal challenge for high-performance transistors is to fit within ever smaller devices. They need to shrink from a lateral dimension of about 100 to 40 nanometers. Cao et al. fabricated tiny devices by using a single semiconducting carbon nanotubes, as well as arrays of these nanotubes. High performance (a high saturation on-state current >1.2 milliamperes per micrometer and a conductance >2 millisiemens per micrometer) was delivered by making end-bonded contacts to the nanotubes with cobalt-molybdenum alloys. Science , this issue p. 1369

multidisciplinary sciences
Wafer-scale fabrication of carbon-nanotube-based CMOS transistors and circuits with high thermal stability

Nan Wei,Ningfei Gao,Haitao Xu,Zhen Liu,Lei Gao,Haoxin Jiang,Yu Tian,Yufeng Chen,Xiaodong Du,Lian-Mao Peng

DOI: https://doi.org/10.1007/s12274-022-4259-9

IF: 9.9

2022-03-22

Nano Research

Abstract:Thanks to its single-atomic-layer structure, high carrier transport, and low power dissipation, carbon nanotube electronics is a leading candidate towards beyond-silicon technologies. Its low temperature fabrication processes enable three-dimensional (3D) integration with logic and memory (static random access memory (SRAM), magnetic random access memory (MRAM), resistive random access memory (RRAM), etc.) to realize efficient near-memory computing. Importantly, carbon nanotube transistors require good thermal stability up to 400 °C processing temperature to be compatible with back-end-of-line (BEOL) process, which has not been previously addressed. In this work, we developed a robust wafer-scale process to build complementary carbon nanotube transistors with high thermal stability and good uniformity, where AIN was employed as electrostatic doping layer. The gate stack and passivation layer were optimized to realize high-quality interfaces. Specifically, we demonstrate 1-bit carbon nanotube full adders working under 250 °C with rail-to-rail outputs.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
CNT Electronics: Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics (adv. Electron. Mater. 8/2019)

Jia Si,Lin Xu,Maguang Zhu,Zhiyong Zhang,Lian‐Mao Peng

DOI: https://doi.org/10.1002/aelm.201970039

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:The center of the image shows the device structure of a typical top-gate field-effect transistor based on aligned carbon nanotube (CNT) arrays, which, as discussed by Zhiyong Zhang, Lian-Mao Peng, and co-workers in article number 1900122, is a key component for future high-performance digital applications. The background shows examples of such an application–5-stage carbon nanotube ring oscillator circuits with an oscillation frequency of 5.54 GHz.
Radiofrequency Transistors Based on Aligned Carbon Nanotube Arrays

Huiwen Shi,Li Ding,Donglai Zhong,Jie Han,Lijun Liu,Lin Xu,Pengkun Sun,Hui Wang,Jianshuo Zhou,Li Fang,Zhiyong Zhang,Lian-Mao Peng

DOI: https://doi.org/10.1038/s41928-021-00594-w

IF: 33.255

2021-01-01

Nature Electronics

Abstract:The development of next-generation wireless communication technology requires integrated radiofrequency devices capable of operating at frequencies greater than 90 GHz. Carbon nanotube field-effect transistors are promising for such applications, but key performance metrics, including operating frequency, at present fall below theoretical predictions. Here we report radiofrequency transistors based on high-purity carbon nanotube arrays that are fabricated using a double-dispersion sorting and binary liquid interface aligning process. The nanotube arrays exhibit a density of approximately 120 nanotubes per micrometre, a maximum carrier mobility of 1,580 cm 2 V −1 s −1 and a saturation velocity of up to 3.0 × 10 7 cm s −1 . The resulting field-effect transistors offer high d.c. performance (on-state current of 1.92 mA µm −1 and peak transconductance of 1.40 mS μm −1 at a bias of −0.9 V) for operation at millimetre-wave and terahertz frequencies. Transistors with a 50 nm gate length show current-gain and power-gain cutoff frequencies of up to 540 and 306 GHz, respectively, and radiofrequency amplifiers can exhibit a high power gain (23.2 dB) and inherent linearity (31.2 dBm output power of the third-order intercept point) in the K-band (18 GHz).
Gigahertz Integrated Circuits Based on Carbon Nanotube Films

Donglai Zhong,Zhiyong Zhang,Li Ding,Jie Han,Mengmeng Xiao,Jia Si,Lin Xu,Chenguang Qiu,Lian-Mao Peng

DOI: https://doi.org/10.1038/s41928-017-0003-y

IF: 33.255

2017-01-01

Nature Electronics

Abstract:Progress in the controlled synthesis and post-growth treatment of carbon nanotubes has led to the fabrication of nanotube-based field-effect transistors with intrinsic performance close to the ballistic limits. However, nanotube-based integrated circuits (ICs) developed to date typically have a working frequency of less than 1 MHz, which is well below the working frequency of silicon ICs. Here we show that the speed of carbon nanotube ICs can be significantly improved by optimizing device structure and fabrication processes, yielding ICs that work in the gigahertz regime. Based on high-performance nanotube film field-effect transistors, five-stage ring oscillators were batch fabricated and shown to exhibit an oscillation frequency of up to 5.54 GHz. This is twenty times higher than that of the leading nanotube IC (a five-stage ring oscillator with an oscillation frequency of 282 MHz).
DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors

Mengyu Zhao,Yahong Chen,Kexin Wang,Zhaoxuan Zhang,Jason K. Streit,Jeffrey A. Fagan,Jianshi Tang,Ming Zheng,Chaoyong Yang,Zhi Zhu,Wei Sun

DOI: https://doi.org/10.1126/science.aaz7435

IF: 56.9

2020-01-01

Science

Abstract:Biofabricated semiconductor arrays exhibit smaller channel pitches than those created using existing lithographic methods. However, the metal ions within biolattices and the submicrometer dimensions of typical biotemplates result in both poor transport performance and a lack of large-area array uniformity. Using DNA-templated parallel carbon nanotube (CNT) arrays as model systems, we developed a rinsing-after-fixing approach to improve the key transport performance metrics by more than a factor of 10 compared with those of previous biotemplated field-effect transistors. We also used spatially confined placement of assembled CNT arrays within polymethyl methacrylate cavities to demonstrate centimeter-scale alignment. At the interface of high-performance electronics and biomolecular self-assembly, such approaches may enable the production of scalable biotemplated electronics that are sensitive to local biological environments.
Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

Lijun Liu,Jie Han,Lin Xu,Jianshuo Zhou,Chenyi Zhao,Sujuan Ding,Huiwen Shi,Mengmeng Xiao,Li Ding,Ze Ma,Chuanhong Jin,Zhiyong Zhang,Lian-Mao Peng

DOI: https://doi.org/10.1126/science.aba5980

IF: 56.9

2020-05-22

Science

Abstract:Aligning dense carbon nanotube arrays Although semiconducting carbon nanotubes (CNTs) are promising candidates to replace silicon in transistors at extremely small dimensions, their purity, density, and alignment must be improved. Liu et al. combined a multiple dispersion sorting process, which improves purity, and a dimension-limited self-alignment process to produce well-aligned CNT arrays on a 10-centimeter silicon wafer. The density is sufficiently high (100 to 200 CNTs per micrometer) that large-scale integrated circuits could be fabricated. With ionic liquid gating, the performance metrics exceeded those of conventional silicon transistors with similar dimensions. Science , this issue p. 850

multidisciplinary sciences
Scalable Synaptic Transistor Memory from Solution‐Processed Carbon Nanotubes for High‐Speed Neuromorphic Data Processing

Jingfang Pei,Lekai Song,Pengyu Liu,Songwei Liu,Zihan Liang,Yingyi Wen,Yang Liu,Shengbo Wang,Xiaolong Chen,Teng Ma,Shuo Gao,Guohua Hu

DOI: https://doi.org/10.1002/adma.202312783

IF: 29.4

2024-10-30

Advanced Materials

Abstract:Scalable synaptic transistor memory from solution‐processed carbon nanotubes, exhibiting reconfigurable weights and long‐term synaptic plasticity, enables parallel neuromorphic data processing with a speed of 1 M bit per second per input channel. Neural networks as a core information processing technology in machine learning and artificial intelligence demand substantial computational resources to deal with the extensive multiply‐accumulate operations. Neuromorphic computing is an emergent solution to address this problem, allowing the computation performed in memory arrays in parallel with high efficiencies conforming to the neural networks. Here, scalable synaptic transistor memories are developed from solution‐sorted carbon nanotubes. The transistors exhibit a large switching ratio of over 105, a significant memory window of ≈12 V arising from charge trapping, and low response delays down to tens of nanoseconds. These device characteristics endow highly stabilized reconfigurable conductance states, successful emulation of synaptic functions, and a high data processing speed. Importantly, the devices exhibit uniform characteristic metrics, e.g., with a 1.8% variation in the memory window, suggesting an industrial‐scale manufacturing capability of the fabrication. Using the memories, a hardware convolution kernel is designed and parallel image processing is demonstrated at a speed of 1 M bit per second per input channel. Given the efficacy of the convolution kernel, a promising prospect of the memories in implementing neuromorphic computing is envisaged. To explore the potential, large‐scale convolution kernels are simulated and high‐speed video processing is realized for autonomous driving.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
High-frequency Performance of Scaled Carbon Nanotube Array Field-Effect Transistors

Mathias Steiner,Michael Engel,Yu-Ming Lin,Yanqing Wu,Keith Jenkins,Damon B. Farmer,Jefford J. Humes,Nathan L. Yoder,Jung-Woo T. Seo,Alexander A. Green,Mark C. Hersam,Ralph Krupke,Phaedon Avouris

DOI: https://doi.org/10.1063/1.4742325

2013-01-01

Abstract:We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in high-frequency electronics.
Speeding up carbon nanotube integrated circuits through three-dimensional architecture

Yunong Xie,Zhiyong Zhang,Donglai Zhong,Lianmao Peng

DOI: https://doi.org/10.1007/s12274-019-2436-2

IF: 9.9

2019-01-01

Nano Research

Abstract:Semiconducting carbon nanotube (CNT) field effect transistor (FET) is attractive for constructing three-dimensional (3D) integrated circuits (ICs) because of its low-temperature processes and low power dissipation. However, CNT based 3D ICs reported usually suffered from lower performance than that of monolayer CNT ICs. In this work, we develop a 3D IC technology through integrating multi-layer high performance CNT film FETs into one chip, and show that it promotes the operation speed of CNT based 3D ICs considerably. We also explore the advantage on ICs of 3D architecture, which brings 38% improvement on speed over two-dimensional (2D) one. Specially, we demonstrate the fabrication of 3D five-stage ring-oscillator circuits with an oscillation frequency of up to 680 MHz and stage delay of 0.15 ns, which represents the highest speed of 3D CNT-based ICs.

Hardware accelerators based on nanotube transistors

Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

A Carbon-Nanotube-based Tensor Processing Unit

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

High-Performance Carbon Nanotube Thin-Film Transistor Technology

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Nanotube and Nanowire Transistors

Three-dimensional Architecture of Carbon Nanotube Transistors with High Speed and Performance

Carbon nanotube digital electronics

Carbon nanotube transistors scaled to a 40-nanometer footprint

Wafer-scale fabrication of carbon-nanotube-based CMOS transistors and circuits with high thermal stability

CNT Electronics: Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics (adv. Electron. Mater. 8/2019)

Radiofrequency Transistors Based on Aligned Carbon Nanotube Arrays

Gigahertz Integrated Circuits Based on Carbon Nanotube Films

DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

Scalable Synaptic Transistor Memory from Solution‐Processed Carbon Nanotubes for High‐Speed Neuromorphic Data Processing

High-frequency Performance of Scaled Carbon Nanotube Array Field-Effect Transistors

Speeding up carbon nanotube integrated circuits through three-dimensional architecture