High Broadband Optical Absorption and Bandstop Filter Characteristics of Pb/Nb2O5 Interfaces

Sabah. E. Algarni,Atef F. Qasrawi,Najla. M. Khusayfan

DOI: https://doi.org/10.1002/crat.202400136

2024-08-08

Crystal Research and Technology

Abstract:Here, semitransparent lead films are used as substrates for depositing niobium pentoxide thin films, creating electro‐optical devices. Techniques like vacuum evaporation and ion sputtering form Pb/Nb2O5 layers, enhancing broadband absorption and reducing carrier absorption. The devices show notable bandstop filter properties with a notch frequency of 1.66 GHz and a bandwidth of 280 MHz, highlighting their broad electro‐optical application potential. In this study, semitransparent lead films serve as substrates for depositing niobium pentoxide thin films, forming versatile electro‐optical devices. Using vacuum evaporation and ion sputtering techniques at ≈10−5 mbar, stacked layers of crystalline Pb and amorphous Nb2O5 are created. This process reduces free carrier absorption in Nb2O5 and forms Urbach tail states with a width of 0.91 eV. Pb/Nb2O5 thin films exhibit remarkable broadband absorption, exceeding 440% in the visible and 98% in the infrared. Moreover, Pb substrates induce a redshift in Nb2O5's energy bandgap. Electrical analysis using impedance spectroscopy on Pb/Nb2O5/Ag structures reveals their series/parallel resonance and bandstop filter properties. Notably, the bandstop filters exhibit reflection coefficient minima at a notch frequency of 1.66 GHz, with a bandwidth of 280 MHz, return loss of 26 dB, and voltage standing wave ratio of 1.13. These findings underscore the device's potential for wide‐ranging electro‐optical applications across the electromagnetic spectrum.

crystallography