Self‐Powered Broadband UV–NIR Photodetectors Based on InSe/PtS2 Van der Waals Heterostructure

Zhengyu Xu,Qinggang Qin,Xiaofei Ma,Jiawang Chen,Xue Liu,Wei Chen,Zhifan Qiu,Lin Wu,Wenshuai Gao,Liang Li

DOI: https://doi.org/10.1002/adom.202401379

IF: 9

2024-08-02

Advanced Optical Materials

Abstract:A high‐performance, broadband self‐powered photodetector based on an InSe/PtS2 van der Waals heterostructure (vdWH) is introduced. The device exhibits excellent self‐powered performance spanning the ultraviolet to near‐infrared spectrum at zero bias. Leveraging the outstanding self‐powered characteristics of the InSe/PtS2 vdWH device, its potential application in imaging is further explored. Van der Waals heterostructures (vdWHs) consisting of 2D materials offer a practical and effective approach for engineering multifunctional, high‐performance photodetectors. However, 2D vdWHs photodetectors based on photoconductive effects require an external power input and are often accompanied by a large dark current, which hinders the development of miniaturization and portability of devices and greatly limits the application of devices in complex environments. Herein, a self‐powered photodetector constructed from an InSe/PtS2 vdWH with an extremely low dark current (≈10−14 A) at zero bias and a large rectification ratio of 5.1 × 103 is reported. Leveraging the robust built‐in electric field of the InSe/PtS2 vdWH, the device demonstrates pronounced photovoltaic effects, characterized by an open‐circuit voltage of 0.395 V and a substantial short‐circuit current of 37.1 nA. Remarkably, a high responsivity and detectivity of 211 mA W−1 and 8.58 × 1012 Jones, an excellent light on/off ratio of 0.8 × 107 , and a fast response time of 465/470 μs are achieved, at zero bias. The device showcases a broadband self‐powered photoresponse spanning from 265 to 1064 nm. This study demonstrates the high potential of the InSe/PtS2 vdWH for broadband self‐powered photodetector applications.

materials science, multidisciplinary,optics