Abstract:We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces the spin-polarization of the surface states to ~50% in both cases; this reduction is absent in simple models but of important implications to essentially any spintronic application. We propose a way of controlling the magnitude of spin polarization associated with a charge current in thin films of topological insulators by means of an external electric field. The proposed dual-gate device configuration provides new possibilities for electrical control of spin.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **the spin - polarization and transport properties of topologically protected surface states in topological insulators (Bi₂Se₃ and Bi₂Te₃), and how to control these properties by applying an external electric field**. Specifically, the authors used the first - principles method to study the energy - band structures and spin textures of two three - dimensional topological insulator materials, Bi₂Se₃ and Bi₂Te₃. They found that: 1. **The influence of spin - orbit coupling**: - The strong spin - orbit coupling (SOI) reduces the surface - state spin - polarization rate of Bi₂Se₃ and Bi₂Te₃ to about 50%, which is different from the simple model prediction and has an important impact on spintronics applications. - SOI leads to the entanglement of spin and orbital angular momentum, thereby reducing the degree of spin - polarization. 2. **The regulation of spin - polarization**: - A method for controlling the spin - polarization intensity caused by charge current in topological insulator thin films by applying a transverse external electric field is proposed. - Through the double - gate device configuration, the electrical control of spin can be achieved, providing new possibilities for spintronics. 3. **Experimental verification and theoretical support**: - The research results show that in the flake structure, the surface - state spin - polarization rate is significantly lower than the ideal value, which is of great significance for the design of spintronic devices in practical applications. - Through calculation and simulation, the reduction of the spin - polarization rate is verified, and a specific regulation mechanism is proposed. ### Main conclusions - The surface - state spin - polarization rate of Bi₂Se₃ and Bi₂Te₃ is significantly reduced to about 50% under the action of strong spin - orbit coupling. - The external electric field can change the degree of spin - polarization of the surface state by regulating the chemical potential, thereby achieving effective control of spin - transport. - These findings have potential application value for the development of new - type spintronic devices. ### Formula examples - Spin - polarization vector: \(\vec{P}(\vec{k})=\frac{2}{\hbar}[\langle S_x(\vec{k})\rangle,\langle S_y(\vec{k})\rangle,\langle S_z(\vec{k})\rangle]\) - The expected value of the spin operator: \(\langle S_\alpha(\vec{k})\rangle = \frac{\hbar}{2}\langle\psi_i(\vec{k})|\sigma_\alpha|\psi_i(\vec{k})\rangle\) (where \(\alpha = x,y,z\)) - Fermi velocity: \(v_F = 4.6\times 10^5\text{ m/s}\) (at the top of the valence band of Bi₂Se₃) Through these studies, the authors not only revealed the basic physical properties of the surface states of topological insulators, but also provided important theoretical and technical support for future spintronics applications.

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