Luminescence decay dynamics of germanium nanocrystals in silicon

Brian Julsgaard,Peter Balling,John Lundsgaard Hansen,Axel Svane,Arne Nylandsted Larsen

DOI: https://doi.org/10.1088/0957-4484/22/43/435401

2010-12-02

Abstract:The dynamics of the luminescence decay from germanium nanocrystals embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. At room temperature the characteristic decay time is of the order of 50 nanoseconds while it extends into the microsecond range at low temperatures. The decay is dominated by non-radiative processes, which show a typical thermal activation energy of a few meV.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

This paper aims to study the luminescence decay kinetics of germanium (Ge) nanocrystals embedded in silicon (Si), especially their performance at different temperatures. Specifically, the authors focus on:

1. **Changes in luminescence decay time**: By changing the temperature (from room temperature to 16 K), the researchers observed a significant increase in the luminescence decay time. At room temperature, the characteristic decay time is about 50 nanoseconds, while at low temperatures it extends to the microsecond range.

2. **The dominant role of non - radiative processes**: It was found that the luminescence decay is mainly dominated by non - radiative processes, which have typical thermal activation energies of a few millielectron volts (meV).

3. **The relationship between spectral characteristics and temperature**: Through the study of time - resolved emission spectra, the authors explored the spectral characteristics of luminescence at different temperatures, especially the changes in the early and late luminescence peaks.

4. **Quantum confinement effect**: By adjusting the thickness of the germanium layer, the researchers observed a blue - shift phenomenon in the luminescence energy, indicating that the luminescence originates from quantum - confined germanium - related structures.

### Formula summary

- **Multi - exponential fitting model**:
\[
f(t)=d_0+\sum_{j = 1}^{N}A_j\exp\left(-\frac{t}{\tau_j}\right)
\]
where \(d_0\) is the dark count level, and \(A_j\) and \(\tau_j\) are the amplitude and decay time, respectively.

- **Characteristic decay time \(\tau^*\)**:
\[
\tau^*=\frac{\text{Area}}{\text{Amplitude}}=\frac{\sum_{j = 2}^{N}A_j\tau_j}{\sum_{j = 2}^{N}A_j}
\]
where "Area" represents the integrated intensity under the decay curve, and "Amplitude" represents the initial intensity.

### Conclusion

By measuring the luminescence decay time of germanium nanocrystals at different temperatures and emission energies, the authors demonstrated that the luminescence decay is mainly dominated by non - radiative recombination mechanisms, and the energy barrier of this non - radiative process is a few millielectron volts (meV). In addition, the study also revealed the long - radiation - decay - time characteristics of indirect - band - gap materials and the possible existence of independent emission mechanisms.

These findings are of great significance for understanding the optical and electronic function integration in the germanium/silicon system, especially the potential for application in optical fiber communication technologies.