Abstract:Exploring the phonon characteristics of novel group-IV binary XC (X = Si, Ge, Sn) carbides and their polymorphs has recently gained considerable scientific/technological interest as promising alternatives to Si for high-temperature, high-power, optoelectronic, gas-sensing, and photovoltaic applications. Historically, the effects of phonons on materials were considered to be a hindrance. However, modern research has confirmed that the coupling of phonons in solids initiates excitations, causing several impacts on their thermal, dielectric, and electronic properties. These studies have motivated many scientists to design low-dimensional heterostructures and investigate their lattice dynamical properties. Proper simulation/characterization of phonons in XC materials and ultrathin epilayers has been challenging. Achieving the high crystalline quality of heteroepitaxial multilayer films on different substrates with flat surfaces, intra-wafer, and wafer-to-wafer uniformity is not only inspiring but crucial for their use as functional components to boost the performance of different nano-optoelectronic devices. Despite many efforts in growing strained zinc-blende (zb) GeC/Si (001) epifilms, no IR measurements exist to monitor the effects of surface roughness on spectral interference fringes. Here, we emphasize the importance of infrared reflectivity Rω and transmission Tω spectroscopy at near normal θi = 0 and oblique θi ≠ 0 incidence (Berreman effect) for comprehending the phonon characteristics of both undoped and doped GeC/Si (001) epilayers. Methodical simulations of Rω and Tω revealing atypical fringe contrasts in ultrathin GeC/Si are linked to the conducting transition layer and/or surface roughness. This research provided strong perspectives that the Berreman effect can complement Raman scattering spectroscopy for allowing the identification of longitudinal optical ωLO phonons, transverse optical ωTO phonons, and LO-phonon-plasmon coupled ωLPP+ modes, respectively.

Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures

Observation of persistent photoconductivity in bulk Gallium Arsenide and Gallium Phosphide samples at cryogenic temperatures using the Whispering Gallery mode method

Modified permittivity observed in bulk Gallium Arsenide and Gallium Phosphide samples at 50 K using the Whispering Gallery mode method

Nondestructive measurement of conductivity of doped GaAs using compact microwave instrument

Investigations of a coherently driven semiconductor optical cavity QED system

Monte Carlo Comparisons to a Cryogenic Dark Matter Search Detector with low Transition-Edge-Sensor Transition Temperature

Nondestructive Measurement and High-Precision Evaluation of the Electrical Conductivity of Doped GaAs Wafers Using Microwaves.

Simulations of Infrared Reflectivity and Transmission Phonon Spectra for Undoped and Doped GeC/Si (001)

Probing carrier and phonon transport in semiconductors all at once through frequency-domain photo-reflectance

Calculation and design of GaAs quantum dot devices where the vibrational modes can be frozen out at cryogenic temperatures

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Investigating microwave loss of SiGe using superconducting transmon qubits

Probing carrier and phonon transport in semiconductors all at once through frequency-domain photoreflectance

4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study

Conductivity Freeze-Out in Isotopically Pure Si-28 at milli-Kelvin Temperatures

Photo-stimulated Current Spectroscopy and Its Application in Detecting Aluminum Implantation-Induced Deep Traps in GaN

Optical Investigations On Pseudomorphic: Delta-Doped Algaas/Ingaas/Gaas Quantum Wells

How Silicon and Boron Dopants Govern the Cryogenic Scintillation Properties of N-type GaAs

Fast Thermodynamic Study on a Silicon Nanotransistor at Cryogenic Temperatures

GaAs as a bright cryogenic scintillator for the direct dark matter detection