Abstract:Utilizing three-terminal tunnel emission of ballistic electrons and holes in a planar tunnel transistor with a Mott-barrier collector, we have developed a method to self-consistently determine the energy gap of a semiconductor and band discontinuities at a semiconductor heterojunction without using a priori material parameters. Measurements are performed on lattice-matched GaAs/AlxGa1-xAs (100) single-barrier double heterostructures with AlxGa1-xAs as the model ternary III-V compounds. Electronic band gaps of the AlGaAs alloys and band offsets at the GaAs/AlGaAs (100) interfaces are measured with a resolution of several meV at 4.2 K. The direct-gap Gamma band offset ratio for the GaAs/AlGaAs (100) interface is found to be 59:41 (+/-3%). Reexamination of our previous experiment [W. Yi et al., Appl. Phys. Lett. 95, 112102 (2009)] revealed that, in the indirect-gap regime, ballistic electrons from direct tunnel emissions probe the X valley in the conduction band, while those from Auger-like scattering processes in the metal base film probe the higher-lying L valley. Such selective electron collection may be explained by their different momentum distributions and parallel momentum conservation at the quasiepitaxial Al/GaAs (100) interface. We argue that the present method is in principle applicable to arbitrary type-I semiconductor heterostructures.

Modified permittivity observed in bulk Gallium Arsenide and Gallium Phosphide samples at 50 K using the Whispering Gallery mode method

Observation of persistent photoconductivity in bulk Gallium Arsenide and Gallium Phosphide samples at cryogenic temperatures using the Whispering Gallery mode method

Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

Semiconductor Photoelastic Constants Measured by Light Scattering in Superlattices.

Electrical Scanning Probe Microscope Measurements Reveal Surprisingly High Dark Conductivity in Y6 and PM6:Y6 and Non-Langevin Recombination in PM6:Y6

Comment on Infrared dielectric function of Ga(As,P) semiconductor alloys near the reststrahlen bands (Applied Physics Letters 123, 172102, 2023)

Full Polar Optical Phonon States and Dispersive Spectra of a Wurtzite GaN/AlN Rectangular Quantum Wire

Whispering gallery quantum well exciton polaritons in an Indium Gallium Arsenide microdisk cavity

Strong field processes inside gallium arsenide

Probing the infrared properties of a p -doped Ge0.938Sn0.062 thin film via polarization-dependent FTIR spectroscopy

Whispering-Gallery Quantum-Well Exciton Polaritons in an Indium Gallium Arsenide Microdisk Cavity

Impact of Plasmonic and Dielectric Substrates on the Whispering-Gallery Modes in Self-Assembled Fluorescent Semiconductor Polymer Microspheres

Optical-Phonon Modes and Electron-Phonon Interaction in Arbitrary Semiconductor Planar Microcavities

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves

Polar Interface-Optical Vibrational Spectra in A Wurtzite Gan/Aln Rectangular Quantum Wire

Size dependence of the bulk and surface phonon modes of gallium arsenide nanowires as measured by Raman Spectroscopy

Resonant Rayleigh scattering from quantum phases of cold electrons in semiconductor heterostructures

Confinement of Polar Optical Phonons in Quasi-One-dimensional Wurtzite GaN-based Quantum Well Wires: Propagating and Half-Space Phonon Modes