Abstract:This study addressed a theoretical and detailed investigation of the valence-band electronic and optical properties of a laser-dressed GaAsSb-based Rosen–Morse quantum well. The one-dimensional Schrödinger equation was solved by a developed BenDaniel and Duke approach considering a position-dependent effective mass for a heavy hole. The spatial dependence of the heavy hole effective mass was determined as a function of Rosen–Morse geometry of the quantum well. The electronic studies were achieved using the Finite-Element Method considering Kramers–Henneberger transformation along with the lines of the Floquet technique. The linear and the third-order nonlinear optical absorption coefficients and refractive index changes were calculated under the approximation of a two-level system using the density matrix method. Calculations were completed to examine the effects of externally applied intense laser and electric fields, well width, and the maximum antimony content. A transition was observed from a single Rosen–Morse confinement profile to a double-type one with doubly degenerated energy states and a red-shifted optical spectrum when the quantum well was irradiated by an intense laser field. Moreover, the axial symmetry and degeneracy were broken along with the emergence of a blue-shifted optical spectrum when the laser-dressed confinement profile was affected by an electric field. The results suggest a strong correlation between the optical and electronic findings through analyzing the energy differences and the dipole transition matrix elements.

The radiative characteristics of quantum-well active region of AlGaAs lasers with separate-confinement heterostructure (SCH)

The effects of multiply quantum wells (MQW) on optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures (SCH)

Quantum-well states and discontinuities in opto-electrical characteristics of SCH lasers

The role of quantum-well states and carrier scattering times on discontinuities in opto-electrical characteristics of SCH lasers

GaAs/AlGaAs quantum cascade lasers

Modified exponential I(U) dependence and optical efficiency of AlGaAs SCH lasers in computer modeling with Synopsys TCAD

Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers

Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content

Ternary Mixed Crystal Effects on Interface Optical Phonon and Electron-Interface Optical Phonon Coupling in Wurtzite GaN/AlxGa1−xN Quantum Wells

Decorrelation of internal quantum efficiency and lasing threshold in AlGaN-based separate confinement heterostructures for UV emission

Theory on the Optical-Phonon Raman Scattering in GaAs/AlAs Heterostructures

Zeeman Splitting of Excitons in GaAs/AlGaAs Quantum Wells in the Faraday Geometry

Electron Scattering and Hybrid Phonons in Low Dimensional Laser Structures made with GaAs/AlxGa1-xAs

The intra/valence-band linear and third-order nonlinear optical properties of a laser-dressed double GaAsSb/GaAs parabolic quantum well: the effect of the geometry of the well and antimony content

Temperature-dependent large signal modulation and Auger recombination in In/sub 0.4/Ga/sub 0.6/As quantum-dot lasers

A comprehensive investigation on valence-band electronic structure and linear and nonlinear optical properties of a laser-driven GaAsSb-based Rosen–Morse quantum well

Coupled cylindrical quantum well wires in broken symmetry: effects of intense laser field on the harmonic generations

AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers

Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

Optical Properties of Diffused AlGaAs/GaAs Multiple Quantum Wells and Their Applications in High Power Laser

Optical Spectroscopy of Quantum Confined States in Gaas/Algaas Quantum Well Tubes